US5401688A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device of multichip module-type
Assignee: Toshiba Corp
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Filing: 1993-09-09
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Granted: 1995-03-28
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Expires: 2013-09-09
Abstract
Abstract A semiconductor chip is packaged within film carriers which serve as the enclosure of the semiconductor chip. The finished semiconductor device is flexible, bendable, and very thin. In manufacturing this semiconductor device, the process of laminating film carriers, the process of electrically connecting the semiconductor chip and film carriers, and the process of sealing the semiconductor chip, can be performed at the same time, shortening the manufacturing time and reducing manufacturing cost.
Inventors
- 👤 Yasuhiro Yamaji
- 👤 Yoichi Hiruta
- 👤 Tsutomu Nakazawa
- 👤 Katsuto Katoh
- 👤 Yoshihiro Atsumi
- 👤 Naohiko Hirano
- 👤 Akihiro Mase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:39
CPC Classifications
H; H10; H10W; H10W90/00; H10W90/401; H05; H05K; H05K1/00; H05K1/18; H05K1/182; H05K1/185; H05K1/186; H10W70/00; H10W70/01; H10W70/05; H10W70/095; H10W70/099; H10W70/60; H10W70/611; H10W70/62; H10W70/63; H10W70/635; H10W70/67; H10W70/688; H10W74/00; H10W74/01; H10W74/10; H10W74/131; H10W74/144; H05K2201/00; H05K2201/09; H05K2201/09009; H05K2201/091; H05K2201/10; H05K2201/10613; H05K2201/10621; H05K2201/10674; H05K3/00; H05K3/46; H05K3/4611; H05K3/4614; H05K3/4626; H05K3/4632; H10W70/08; H10W70/09; H10W72/00; H10W72/90; H10W72/941; H10W72/9413; H10W90/10; H10W90/701; H10W90/721; H10W90/724; H10W90/751; H10W90/754; Y; Y10; Y10T; Y10T156/00; Y10T156/10; Y10T156/1002; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
98 words
A method of manufacturing a semiconductor device comprising the steps of: forming a wiring pattern by printing conductive paste on each of a plurality of film carriers, and forming holes at the position where viahole connections are necessary; and laminating said plurality of semiconductor chips, heating and compressing said laminated film carriers within which semiconductor chips are packaged with electrode pads of said semiconductor chips being aligned to said wiring pattern, to perform at the same time the processes of laminating said film carriers, electrically connecting said semiconductor chips to said film carriers, and sealing said semiconductor chips.
Claim 2
Independent Claim
98 words
A method of manufacturing a semiconductor device comprising the steps of: forming a wiring pattern by printing conductive paste on each of a plurality of film carriers, and forming holes at the position where viahole connections are necessary; and laminating said plurality of semiconductor chips, heating and compressing said laminated film carriers within which semiconductor chips are packaged with electrode pads of said semiconductor chips being aligned to said wiring pattern, to perform at the same time the processes of laminating said film carriers, electrically connecting said semiconductor chips to said film carriers, and sealing said semiconductor chips.
Claim 3
Independent Claim
134 words
A method of manufacturing a semiconductor device comprising the steps of: forming wiring patterns by using conductive paste on a first, second and third plastic film; forming holes in the second plastic film at positions where via hole connections are to be made; laminating the first, second and third plastic films by heating and pressurizing them into a flexible state in which a plurality of semiconductor chips having electrode pads are interposed between the second plastic film and the third plastic film, and the electrode pads of the semiconductor chips are connected electrically to the wiring patterns of the first plastic film through the holes in the second plastic film, at the same time electrically connecting the semiconductor chips to the wiring patterns of the first plastic film; and sealing the resulting semiconductor device.
Claim 4
Independent Claim
134 words
A method of manufacturing a semiconductor device comprising the steps of: forming wiring patterns by using conductive paste on a first, second and third plastic film; forming holes in the second plastic film at positions where via hole connections are to be made; laminating the first, second and third plastic films by heating and pressurizing them into a flexible state in which a plurality of semiconductor chips having electrode pads are interposed between the second plastic film and the third plastic film, and the electrode pads of the semiconductor chips are connected electrically to the wiring patterns of the first plastic film through the holes in the second plastic film, at the same time electrically connecting the semiconductor chips to the wiring patterns of the first plastic film; and sealing the resulting semiconductor device.
Claim 5
Dependent Claim
59 words
A method of manufacturing a semiconductor device according to claim 2, wherein the first, second and third plastic films are laminated into a state in which the electrode pads of at least two said semiconductor chips are electrically connected to each other by the wiring patterns of the first plastic film, through the holes of the second plastic film.
Claim 6
Dependent Claim
31 words
A method of manufacturing a semiconductor device according to claim 2, further comprising the step of forming insulating films on the surfaces of the semiconductor chips, except over the electrode pads.
Claim 7
Dependent Claim
37 words
A method of manufacturing a semiconductor device according to claim 2, further comprising the step of forming ground layers, made of conductive films, on at least one surface of each of the first and third plastic films.
Claim 8
Dependent Claim
49 words
A method of manufacturing a semiconductor device according to claim 2, further comprising the step of forming a plug-in type terminal, which is connected electrically to the wiring patterns of at least one of the first, second and third plastic films, in the area peripheral to the semiconductor device.
Claim 9
Dependent Claim
35 words
A method of manufacturing a semiconductor device according to claim 2, further comprising the step of coating the semiconductor device with a resin which shields the external surface of the semiconductor device from radioactive rays.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-27 | 1998-09-26 | 1999-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-27 | 2002-09-26 | 2003-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-27 | 2006-09-26 | 2007-03-28 | $7700.00 | Window Closed / Lapsed |