Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
212 words
Process for producing a semiconductor component
having a contact structure for making vertical contact
with a further semiconductor component, in which in a first step a layer structure having a contact layer,
which is made of semiconductor material and with which
contact is to be made, or a metal contact (4) or a
conductor track is produced on a substrate (1), in a second step, using a mask, a vertical recess (10) is
etched into said substrate (1), starting from the side
provided with said layer structure, to a depth which is
sufficient for a subsequent fourth step, in a third step a metal (9) is deposited into said recess
(10) and onto a surface of the contact layer, which is
made of semiconductor material and with which contact is
to be made, or of the metal contact (4) or of the conductor
track, with the result that that portion of said
metal (9) which is introduced into said recess (10) is
electrically conductively connected to that portion of
said metal (9) which is applied to said surface, and in a fourth step that side of the substrate (1) which is
opposite the layer structure is removed until the metal
(9) in the recess (10) projects beyond said side of the
substrate.
Claim 2
Dependent Claim
222 words
Process for producing semiconductor components
between which contact is made vertically and electrically
conductively, in which in a first step there are produced a first semiconductor
component according to the process according to Claim 1
and a second semiconductor component which is to make
vertical contact with said first semiconductor component
and has a layer structure having a contact layer, which
is made of semiconductor material and with which contact
is to be made, or a metal contact (4') or a conductor
track, in a second step, using a mask, a metallization layer
(19) made of a metal having a lower melting point than
that of conductor tracks is applied to said contact layer
made of semiconductor material or said metal contact (4')
or said conductor track, as far as a region provided for
making contact with the first semiconductor component, in a third step the two semiconductor components are
arranged above one another in such a way that the metal
(9) projecting out of the recess (10) in the substrate
(1) of the first semiconductor component is situated
above the region, provided for contact-making, of said
metallization layer (19) of the second semiconductor
component, and in a fourth step a permanent, electrically conductive
contact with the metal (9) of the first semiconductor
component is produced by heating said metallization layer
(19).
Claim 3
Dependent Claim
49 words
Process according to Claim 2, in which tungsten is used for the metal (9) projecting
through the recess (10) in the substrate (1) of the first
semiconductor component, and in which AuIn is used for the metallization layer (19),
having a lower melting point, of the second semiconductor
component.
Claim 4
Dependent Claim
18 words
Process according to one of Claims 1 to 3, in which the semiconductor components are produced using
silicon.