US5314844A
Expired / Lapsed
US
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Method for dicing a semiconductor wafer
Assignee: Toshiba Corp
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Filing: 1992-03-04
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Granted: 1994-05-24
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Expires: 2012-03-04
Abstract
Abstract A method of dicing a wafer of III-V compound material without causing chipping and cracks. The method includes the steps of forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method, forming a groove in the semiconductor wafer in parallel to the crystal plane (011) by means of a grinding-cutting method, and breaking the semiconductor wafer along the scribe line and the groove.
Inventors
- 👤 Souichi Imamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:40
CPC Classifications
H; H10; H10P; H10P54/00; B; B28; B28D; B28D5/00; B28D5/0005; B28D5/0011; H01; H01S; H01S5/00; H01S5/02; H01S5/0201; H10P50/00; H10P72/00; H10P72/04; H10P72/0428; H01S5/0202; Y; Y10; Y10S; Y10S148/00; Y10S148/028; Y10T; Y10T225/00; Y10T225/10; Y10T225/12
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
71 words
A method for dicing a wafer of III-V compound semiconductor material, the method comprising the steps of: forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method; forming a groove in the semiconductor wafer in parallel to the crystal plane (011) by means of a grinding-cutting method; and breaking the semiconductor wafer along the scribe line and the groove.
Claim 2
Independent Claim
71 words
A method for dicing a wafer of III-V compound semiconductor material, the method comprising the steps of: forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method; forming a groove in the semiconductor wafer in parallel to the crystal plane (011) by means of a grinding-cutting method; and breaking the semiconductor wafer along the scribe line and the groove.
Claim 3
Dependent Claim
21 words
The method of claim 1, wherein the grinding-cutting method uses a blade means for forming the groove in the semiconductor wafer.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein the grinding-cutting method uses a wire saw means for forming the groove in the semiconductor wafer.
Claim 5
Dependent Claim
88 words
In a method for dicing a wafer of III-V compound semiconductor material, the method comprising two distinct steps for forming a scribe line and a groove in the semiconductor material, comprising the steps of: forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method; forming a groove in the semiconductor wafer in parallel to the crystal plane (011) by means of a grinding-cutting method; and breaking the semiconductor wafer along the scribe line and the groove.
Claim 6
Dependent Claim
88 words
In a method for dicing a wafer of III-V compound semiconductor material, the method comprising two distinct steps for forming a scribe line and a groove in the semiconductor material, comprising the steps of: forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method; forming a groove in the semiconductor wafer in parallel to the crystal plane (011) by means of a grinding-cutting method; and breaking the semiconductor wafer along the scribe line and the groove.
Claim 7
Dependent Claim
21 words
The method of claim 4, wherein the grinding-cutting method uses a blade means for forming the groove in the semiconductor wafer.
Claim 8
Dependent Claim
22 words
The method of claim 4, wherein the grinding-cutting method uses a wire saw means for forming the groove in the semiconductor wafer.
Claim 9
Independent Claim
66 words
A method for dicing a wafer of III-V compound semiconductor material, the method comprising the steps of: forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method; cutting through the semiconductor wafer in grooves parallel to the crystal plane by means of a grinding-cutting method; and breaking the semiconductor wafer along the scribe line.
Claim 10
Independent Claim
66 words
A method for dicing a wafer of III-V compound semiconductor material, the method comprising the steps of: forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method; cutting through the semiconductor wafer in grooves parallel to the crystal plane by means of a grinding-cutting method; and breaking the semiconductor wafer along the scribe line.
Claim 11
Dependent Claim
20 words
The method of claim 1, wherein the grinding-cutting method uses a blade means for further cutting through the semiconductor wafer.
Claim 12
Dependent Claim
21 words
The method of claim 1, wherein the grinding-cutting method uses a wire saw means for further cutting through the semiconductor wafer.
References Cited (Backward Citations)
JPH025053A
Cited
US5182233A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-23 | 1997-11-22 | 1998-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-23 | 2001-11-22 | 2002-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-23 | 2005-11-22 | 2006-05-24 | $7700.00 | Window Closed / Lapsed |