Patent US6624450B1 successfully refreshed from Google Patents.
US6624450B1
Expired / Lapsed
US
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Semiconductor device and method for forming the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1999-01-25
•
Granted: 2003-09-23
•
Expires: 2019-01-25
Abstract
Abstract In a thin-film insulated gate type field effect transistor having a metal gate in which the surface of the gate electrode is subjected to anodic oxidation, a silicon nitride film is provided so as to be interposed between the gate electrode and the gate insulating film to prevent invasion of movable ions into a channel, and also to prevent the breakdown of the gate insulating film due to a potential difference between the gate electrode and the channel region. By coating a specific portion of the gate electrode with metal material such as chrome or the like for the anodic oxidation, and then removing only the metal material such as chrome or the like together with the anodic oxide of the metal material such as chrome or the like, an exposed portion of metal gate (e.g. aluminum) is formed, and an upper wiring is connected to the exposed portion. Further, an aluminum oxide or silicon nitride is formed as an etching stopper between the gate electrode and the gate insulating film or between the substrate and the layer on the substrate, so that the over-etching can be prevented and the flatness of the element can be improved. In addition, a contact is formed in no consideration of the concept “contact hole”.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Hongyong Zhang
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:26
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D30/6757; H10D86/00
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
89 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; and a gate electrode located over said channel region with a third insulating film comprising silicon oxide and a fourth insulating film comprising silicon nitride interposed therebetween wherein said third insulating film is in direct contact with said semiconductor layer.
Claim 2
Dependent Claim
89 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; and a gate electrode located over said channel region with a third insulating film comprising silicon oxide and a fourth insulating film comprising silicon nitride interposed therebetween wherein said third insulating film is in direct contact with said semiconductor layer.
Claim 3
Dependent Claim
19 words
A semiconductor device according to claim 1 , wherein said fourth insulating film is doped with hydrogen and oxygen.
Claim 4
Dependent Claim
49 words
A semiconductor device according to claim 1 wherein a thickness of said first insulating film is 10-50 nm, a thickness of said second insulating film is 100-800 nm, a thickness of said third insulating film is 50-200 nm and a thickness of said fourth insulating film is 2-20 nm.
Claim 5
Dependent Claim
135 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer wherein said third insulating film extends beyond edges of said semiconductor layer so that said second and third insulating films are in direct contact to each other; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said fourth insulating film covers said semiconductor layer extends beyond side edges of the semiconductor layer; a gate electrode formed over said channel region with said third and fourth insulating films interposed therebetween.
Claim 6
Dependent Claim
135 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer wherein said third insulating film extends beyond edges of said semiconductor layer so that said second and third insulating films are in direct contact to each other; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said fourth insulating film covers said semiconductor layer extends beyond side edges of the semiconductor layer; a gate electrode formed over said channel region with said third and fourth insulating films interposed therebetween.
Claim 7
Dependent Claim
18 words
A semiconductor device according to claim 4 wherein said fourth insulating film is doped with hydrogen or oxygen.
Claim 8
Dependent Claim
49 words
A semiconductor device according to claim 4 wherein a thickness of said first insulating film is 10-50 nm, a thickness of said second insulating film is 100-800 nm, a thickness of said third insulating film is 50-200 nm and a thickness of said fourth insulating film is 2-20 nm.
Claim 9
Dependent Claim
115 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said fourth insulating film covers said semiconductor layer except for a contact hole; a gate electrode formed over said channel region with said third and fourth insulating films interposed therebetween, wherein said source and drain regions are doped with hydrogen.
Claim 10
Dependent Claim
115 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said fourth insulating film covers said semiconductor layer except for a contact hole; a gate electrode formed over said channel region with said third and fourth insulating films interposed therebetween, wherein said source and drain regions are doped with hydrogen.
Claim 11
Dependent Claim
18 words
A semiconductor device according to claim 7 wherein said fourth insulating film is doped with hydrogen or oxygen.
Claim 12
Dependent Claim
49 words
A semiconductor device according to claim 7 wherein a thickness of said first insulating film is 10-50 nm, a thickness of said second insulating film is 100-800 nm, a thickness of said third insulating film is 50-200 nm and a thickness of said fourth insulating film is 2-20 nm.
Claim 13
Dependent Claim
132 words
A semiconductor device comprising: a substrate; a semiconductor layer formed over said substrate wherein said semiconductor layer includes at least source, drain and channel regions; a gate electrode adjacent to said channel region; a first laminate structure interposed between said gate electrode and said channel region, wherein said first laminate structure includes a first insulating film comprising silicon oxide in contact with said channel region and a second insulating film comprising silicon nitride between said first insulating film and said gate electrode, and a second laminate structure including a third insulating film comprising silicon oxide and a fourth insulating film comprising silicon nitride wherein said channel region is interposed between said first and second laminate structures, wherein said third insulating film is interposed between said semiconductor layer and said fourth insulating film.
Claim 14
Dependent Claim
132 words
A semiconductor device comprising: a substrate; a semiconductor layer formed over said substrate wherein said semiconductor layer includes at least source, drain and channel regions; a gate electrode adjacent to said channel region; a first laminate structure interposed between said gate electrode and said channel region, wherein said first laminate structure includes a first insulating film comprising silicon oxide in contact with said channel region and a second insulating film comprising silicon nitride between said first insulating film and said gate electrode, and a second laminate structure including a third insulating film comprising silicon oxide and a fourth insulating film comprising silicon nitride wherein said channel region is interposed between said first and second laminate structures, wherein said third insulating film is interposed between said semiconductor layer and said fourth insulating film.
Claim 15
Dependent Claim
21 words
The semiconductor device according to claim 10 wherein said second insulating film comprising silicon nitride is doped with hydrogen or oxygen.
Claim 16
Dependent Claim
126 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon nitride formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer wherein said third insulating film extends beyond edges of said semiconductor layer so that said second and third insulating films are in direct contact to each other; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said fourth insulating film substantially covers said semiconductor layer except for a contact hole, wherein said source and drain regions are doped with hydrogen.
Claim 17
Dependent Claim
126 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon nitride formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer wherein said third insulating film extends beyond edges of said semiconductor layer so that said second and third insulating films are in direct contact to each other; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said fourth insulating film substantially covers said semiconductor layer except for a contact hole, wherein said source and drain regions are doped with hydrogen.
Claim 18
Dependent Claim
49 words
A semiconductor device according to claim 12 wherein a thickness of said first insulating film is 10-50 nm, a thickness of said second insulating film is 100-800 nm, a thickness of said third insulating film is 50-200 nm and a thickness of said fourth insulating film is 2-20 nm.
Claim 19
Dependent Claim
17 words
A semiconductor device according to claim 12 further comprising a gate electrode adjacent to said channel region.
Claim 20
Dependent Claim
135 words
A CMOS semiconductor device having an N-channel type thin film transistor and a P-channel type thin film transistor, each of which comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said fourth insulating film substantially covers said semiconductor layer except for a contact hole, wherein the first and fourth insulating films comprising silicon nitride are both formed over a portion of said substrate between the N-channel and P-channel type thin film transistors.
Claim 21
Dependent Claim
135 words
A CMOS semiconductor device having an N-channel type thin film transistor and a P-channel type thin film transistor, each of which comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said fourth insulating film substantially covers said semiconductor layer except for a contact hole, wherein the first and fourth insulating films comprising silicon nitride are both formed over a portion of said substrate between the N-channel and P-channel type thin film transistors.
Claim 22
Dependent Claim
49 words
A semiconductor device according to claim 15 wherein a thickness of said first insulating film is 10-50 nm, a thickness of said second insulating film is 100-800 nm, a thickness of said third insulating film is 50-200 nm and a thickness of said fourth insulating film is 2-20 nm.
Claim 23
Dependent Claim
17 words
A semiconductor device according to claim 15 further comprising a gate electrode adjacent to said channel region.
Claim 24
Dependent Claim
164 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on a first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said third and fourth insulating films cover said semiconductor layer; a gate electrode formed over said channel region with said third and fourth insulating films interposed therebetween; an interlayer insulating film comprising silicon oxide formed on said gate electrode and said fourth insulating film; and at least one electrode formed on said interlayer insulating film wherein said at least one electrode is electrically connected to one of said source and drain regions via a contact hole opened through said interlayer insulating film and said third and fourth insulating films.
Claim 25
Dependent Claim
164 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on a first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said third and fourth insulating films cover said semiconductor layer; a gate electrode formed over said channel region with said third and fourth insulating films interposed therebetween; an interlayer insulating film comprising silicon oxide formed on said gate electrode and said fourth insulating film; and at least one electrode formed on said interlayer insulating film wherein said at least one electrode is electrically connected to one of said source and drain regions via a contact hole opened through said interlayer insulating film and said third and fourth insulating films.
Claim 26
Dependent Claim
49 words
A semiconductor device according to claim 18 wherein a thickness of said first insulating film is 10-50 nm, a thickness of said second insulating film is 100-800 nm, a thickness of said third insulating film is 50-200 nm and a thickness of said fourth insulating film is 2-20 nm.
Claim 27
Dependent Claim
143 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said third and fourth insulating films cover said semiconductor layer; an interlayer insulating film comprising silicon oxide formed on said fourth insulating film; and at least one electrode formed on said interlayer insulating film wherein said at least one electrode is electrically connected to one of said source and drain regions via a contact hole opened through said interlayer insulating film and said third and fourth insulating films.
Claim 28
Dependent Claim
143 words
A semiconductor device comprising: a first insulating film comprising silicon nitride formed on a substrate; a second insulating film comprising silicon oxide formed on said first insulating film; a semiconductor layer formed on said second insulating film wherein said semiconductor layer includes at least source, drain and channel regions; a third insulating film comprising silicon oxide formed on said semiconductor layer; a fourth insulating film comprising silicon nitride formed on said third insulating film wherein said third and fourth insulating films cover said semiconductor layer; an interlayer insulating film comprising silicon oxide formed on said fourth insulating film; and at least one electrode formed on said interlayer insulating film wherein said at least one electrode is electrically connected to one of said source and drain regions via a contact hole opened through said interlayer insulating film and said third and fourth insulating films.
Claim 29
Dependent Claim
31 words
A semiconductor device according to any one of claim 1 , 4 , 7 , 10 , 12 , 15 , 18 or 20 wherein said semiconductor layer comprises crystallize silicon.
Claim 30
Dependent Claim
30 words
A semiconductor device according to any one of claim 1 , 4 , 7 , 10 , 12 15 , 18 or 20 wherein said substrate is a glass substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-09-22 | 2007-03-24 | 2007-09-23 | $2000.00 | Window Closed / Lapsed |
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