EP0301463A2
Expired / Lapsed
EP
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Thin film silicon semiconductor device and process for producing it
Assignee: NTT Inc
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Filing: 1988-07-25
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Granted: —
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Expires: 2008-07-25
Abstract
Abstract A thin film silicon semiconductor device provided on a substrate (12) according to the present invention comprises a thin polycrystalline silicon film (14) having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm²/V·s or higher.
Inventors
- 👤 Tadashi Serikawa
- 👤 Seiichi Shirai
- 👤 Akio Okamoto
- 👤 Shirou Suyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 09:39
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3466; H10P95/00
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
42 words
A thin film silicon semiconductor device provided on insulating substrate, characterized by comprising: a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal as the thin silicon film constituting said thin film silicon semiconductor device.
Claim 2
Dependent Claim
42 words
A thin film silicon semiconductor device provided on insulating substrate, characterized by comprising: a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal as the thin silicon film constituting said thin film silicon semiconductor device.
Claim 3
Dependent Claim
37 words
A thin film silicon semiconductor device as claimed in claim 1, characterized in that the ratio of the lattice constant of said thin polycrystalline silicon film to that of said silicon single crystal is 0.999 or lower.
Claim 4
Dependent Claim
39 words
A thin film silicon semiconductor device as claimed in claim 1, characterized in that said thin polycrystalline silicon film has [111] axis orientation in a direction perpendicular to the surface of said substrate or in a direction close thereto.
Claim 5
Dependent Claim
28 words
A thin film silicon semiconductor device as claimed in claim 1, characterized in that said thin polycrystalline silicon film contains boron in a concentration of 10¹⁴ to 10¹⁷/cm³.
Claim 6
Dependent Claim
41 words
A thin film silicon semiconductor device as claimed in claim 1, characterized in that said thin polycrystalline silicon film contains as an impurity at lest one element selected from phosphorous and arsenic in a total impurity concentration of 10¹⁴ to 10¹⁷/cm³.
Claim 7
Dependent Claim
21 words
A thin film silicon semiconductor device as claimed in claim 1, characterized in that said insulating substrate is a glass substrate.
Claim 8
Dependent Claim
73 words
A thin film silicon semiconductor device as claimed in claim 1, characterized in that said thin polycrystalline silicon film is formed through an insulating film on said insulating substrate, and said device further comprises a gate insulating film and a gate electrode formed in the order named on said thin polycrystalline silicon film, and a source electrode and a drain electrode formed on said insulating film while sandwiching said thin polycrystalline silicon film.
Claim 9
Dependent Claim
62 words
A thin film silicon semiconductor device as claimed in claim 1, characterized in that said thin polycrystalline silicon film is formed on said substrate through a first insulating film, a gate electrode and a gate insulating film, and said device further comprises a source electrode and a drain electrode formed on said gate insulating film while sandwiching said thin polycrystalline silicon film.
Claim 10
Dependent Claim
71 words
A process for producing a thin film silicon semiconductor device on an insulating substrate, characterized by comprising the steps of: depositing a thin amorphous silicon film according to sputtering by glow discharge in an inert gas having a pressure of 3.5 Pa or lower; and annealing said thin amorphous silicon film so as to polycrystallize said amorphous film and to have a lattice constant smaller than that of silicon single crystal.
Claim 11
Dependent Claim
71 words
A process for producing a thin film silicon semiconductor device on an insulating substrate, characterized by comprising the steps of: depositing a thin amorphous silicon film according to sputtering by glow discharge in an inert gas having a pressure of 3.5 Pa or lower; and annealing said thin amorphous silicon film so as to polycrystallize said amorphous film and to have a lattice constant smaller than that of silicon single crystal.
Claim 12
Dependent Claim
30 words
A process for producing a thin film silicon semiconductor device as claimed in claim 9, characterized in that the heating time of said annealing is not longer than 10 seconds.
Claim 13
Dependent Claim
26 words
A process for producing a thin film silicon semiconductor device as claimed in claim 9, characterized in that said annealing is effected by laser beam irradiation.
Claim 14
Dependent Claim
26 words
A process for producing a thin film silicon semiconductor device as claimed in claim 9, characterized in that said annealing is effected by electron beam irradiation.
Claim 15
Dependent Claim
26 words
A process for producing a thin film silicon semiconductor device as claimed in claim 9, characterized in that said annealing is effected by infrared ray irradiation.
Claim 16
Dependent Claim
34 words
A process for producing a thin film silicon semiconductor device as claimed in claim 9, characterized in that said thin amorphous silicon film is deposited on an insulating film formed on said insulating substrate.
Claim 17
Dependent Claim
55 words
A process for producing a thin film silicon semiconductor device as claimed in claim 14, characterized in that a gate insulating film is formed on said thin polycrystallized silicon film, and a gate electrode is formed on said gate insulating film while a source electrode and a drain electrode are formed on said insulating film.
Claim 18
Dependent Claim
43 words
A process for producing a thin film silicon semiconductor device as claimed in claim 9, characterized in that said thin amorphous silicon film is formed on a gate insulating film formed through an insulating film and a gate electrode on said insulating substrate.
Claim 19
Dependent Claim
57 words
A process for producing a thin film silicon semiconductor device as claimed in claim 16, characterized in that said gate insulating film is formed so as to cover said insulating film and said gate electrode, and a source electrode and a drain electrode are formed on said gate insulating film while sandwiching said thin polycrystallized silicon film.
Claim 20
Dependent Claim
49 words
A process for producing a thin film silicon semiconductor device as claimed in claim 9, characterized in that said sputtering is effected using a silicon target containing as an impurity at least one element selected from boron, phosphorus, and arsenic in a total impurity concentration of 10¹⁴ to 10¹⁷/cm³.
Claim 21
Dependent Claim
52 words
A process for producing a thin film silicon semiconductor device as claimed in claim 9, further comprises the step of introducing as an impurity at least one element selected from boron, phosphorous, and arsenic in a total impurity concentration of 10¹⁴ to 10¹⁷/cm³ into said thin amorphous silicon film by ion implantation.
References Cited (Backward Citations)
No citation records indexed.
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