Manufacture of thin-film transistor

Abstract

Abstract PURPOSE:To conduct the annealing of electrode layers, the high-degree movement of a channel section and the activation of source-drain regions simultaneously by the one-time irradiation of an ultraviolet laser by forming a gate or source-drain electrodes for a thin-film transistor by a transparent metal. CONSTITUTION:A gate insulating film 3 and a gate electrode 9 consisting of a transparent metal are patterned on an amorphous hydride semiconductor thin-film 2 on a glass substrate 1 first. P<+> or B<+> ions 11 are implanted in approximately 10<16>/cm through an ion implantation method and source-drain regions are each shaped in a self-alignment manner, and ultraviolet pulse laser-beams 10 are projected from the transparent electrode 9 side. Accordingly, the transparent electrode 9 is annealed first, and a change into a polycrystal and the high- degree movement of a channel region and the activation of carriers in the source-drain regions are performed simultaneously.

Inventors

• 👤 Kenji Sera
• 👤 賢二 世良

Bibliographic Details