US4866498A
Expired / Lapsed
US
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Integrated circuit with dissipative layer for photogenerated carriers
Assignee: United States, AS REPRESENTED BY UNITED STATES DEPARATMENT OF ENERGY
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Filing: 1988-04-20
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Granted: 1989-09-12
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Expires: 2008-04-20
Abstract
Abstract The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissi The U.S. Government has rights in this invention pursuant to Contract No. DE-ACO4-76DP00789 between the Department of Energy and AT&T Technologies, Inc.
Inventors
- 👤 David R. Myers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:21
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; Y; Y10; Y10S; Y10S257/00; Y10S257/906
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
83 words
An integrated circuit comprising: a substrate comprising a first material; a semiconductor device sensitive to photogenerated carriers, said device covering an area of said substrate; and (dissipative) partially insulating layer means, formed of a second material different from said first material and extending between said substrate and said device over all of said area, for conducting a DC current between said device and said substrate, said layer means having an RC time constant greater than the time constant characteristic of photogenerated minority lifetimes.
Claim 2
Dependent Claim
83 words
An integrated circuit comprising: a substrate comprising a first material; a semiconductor device sensitive to photogenerated carriers, said device covering an area of said substrate; and (dissipative) partially insulating layer means, formed of a second material different from said first material and extending between said substrate and said device over all of said area, for conducting a DC current between said device and said substrate, said layer means having an RC time constant greater than the time constant characteristic of photogenerated minority lifetimes.
Claim 3
Dependent Claim
15 words
The integrated circuit of claim 1 wherein said second material consists of nonstoichiometric silicon nitride.
Claim 4
Dependent Claim
18 words
The integrated circuit of claim 2 wherein said layer means is on the order of 2000 A thick.
Claim 5
Dependent Claim
24 words
The integrated circuit of claim 1 wherein said partially insulating layer consisting of a layer silicon dioxide of sufficient thinness to support DC conduction.
Claim 6
Dependent Claim
52 words
The integrated circuit of claim 1 wherein said semiconductor device comprises two semiconductor devices formed on said substrate, each said device being electrically switchable between a first condition and a second condition, said devices being interconnected such that the condition of one device is always opposite the condition of the other device.
Claim 7
Dependent Claim
16 words
The integrated circuit of claim 5 wherein said two semiconductor devices comprise a complementary logic circuit.
Claim 8
Dependent Claim
12 words
The integrated circuit of claim 6 wherein said devices are MOS FETs.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-11 | 1993-03-13 | 1993-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-11 | 1997-03-13 | 1997-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-11 | 2001-03-13 | 2001-09-12 | $7700.00 | Window Closed / Lapsed |