Semiconductor device

Abstract

Abstract PURPOSE: To prevent malfunction by a method wherein Cu, Ni, Pt or Au etc. layer possessing the thickness of 26μm or more is installed at the surface of semiconductor chip, and the α particle radiation is shielded whereby pair of hole and electron is prevented from generation. CONSTITUTION: Alumina, Beryllia and Kovar etc. employed in the package cover material contain the radioactive elements such as Uranium and Thorium and the α particle is radiated from them. For this reason, the α particle is radiated to the semiconductor chips mounted on the package. Therefore, if the α particle is radiated to the FET gate portion, the hole and electron pair is generated, and electron generates electric charge under the gate to cause malfunction. Therefore, when the α particle shialding material possessing Cu, etc. of the specified thickness is installed at the covering material surface facing the chip active field exterior, then, the malfunction is allowed to be eliminated. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Kazuo Okano

Bibliographic Details