Abstract A field-effect semiconductor device of this invention includes a first insulating film formed on a semiconductor substrate, a source region of a second conductivity type and a drain region of the second conductivity type, which are arranged on the insulating film and are formed on both the sides of a semiconductor active layer of a first conductivity type, a second insulating film for covering the top and side surfaces of the semiconductor active layer, the source region, and the drain region, a gate electrode arranged on the second insulating film corresponding to the semiconductor active layer, a non-oxidizable third insulating film arranged on the second insulating film for covering the side surfaces of the semiconductor active layer and the source and drain regions, and the other regions, a fourth insulating film arranged on the non-oxidizable third insulating film, a fifth insulating film for covering a portion of the third insulating film located on the side surfaces of the source and drain regions, the fourth insulating film, the semiconductor active layer, the second insulating film arranged on the top surfaces of the source and drain regions, and a gate electrode arranged on the second insulating film, and a source electrode and a drain electrode arranged on the fifth insulating film and connected to the source region and the drain region, respectively, through contact holes formed in the fifth insulating film and the second insulating film.
A method of manufacturing a field-effect semiconductor device, comprising the steps of: preparing a semiconductor structure in which a first insulating film is formed on a semiconductor substrate and a first semiconductor layer is formed on said first insulating layer; processing said first semiconductor layer to have predetermined planar dimensions; forming a second insulating film on top and side surfaces of said processed first semiconductor layer; depositing a third non-oxidizable insulating film on a major surface of said semiconductor structure; depositing a second semiconductor layer on said third non-oxidizable insulating film; forming a fourth insulating film on said second semiconductor layer; depositing a fifth non-oxidizable insulating film on said fourth insulating film; processing said fifth non-oxidizable insulating film to have dimensions covering the region of said first semiconductor layer processed into predetermined planar dimensions; oxidizing said second semiconductor layer by using said fifth non-oxidizable insulating film as a mask, thereby changing a major region into a semiconductor oxide; removing said fifth non-oxidizable insulating film and said fourth insulating film remaining under said fifth non-oxidizable insulating film to expose said second semiconductor layer remaining under said fourth insulating film; etching said second semiconductor layer to expose said third non-oxidizable insulating film on said processed first semiconductor layer; changing said second semiconductor layer partially remaining on a periphery of said processed first semiconductor layer into an oxide; and etching said third non-oxidizable insulating film exposed on a major surface side of said semiconductor structure to expose said second insulating film.
Claim 2
Independent Claim
248 words
A method of manufacturing a field-effect semiconductor device, comprising the steps of: preparing a semiconductor structure in which a first insulating film is formed on a semiconductor substrate and a first semiconductor layer is formed on said first insulating layer; processing said first semiconductor layer to have predetermined planar dimensions; forming a second insulating film on top and side surfaces of said processed first semiconductor layer; depositing a third non-oxidizable insulating film on a major surface of said semiconductor structure; depositing a second semiconductor layer on said third non-oxidizable insulating film; forming a fourth insulating film on said second semiconductor layer; depositing a fifth non-oxidizable insulating film on said fourth insulating film; processing said fifth non-oxidizable insulating film to have dimensions covering the region of said first semiconductor layer processed into predetermined planar dimensions; oxidizing said second semiconductor layer by using said fifth non-oxidizable insulating film as a mask, thereby changing a major region into a semiconductor oxide; removing said fifth non-oxidizable insulating film and said fourth insulating film remaining under said fifth non-oxidizable insulating film to expose said second semiconductor layer remaining under said fourth insulating film; etching said second semiconductor layer to expose said third non-oxidizable insulating film on said processed first semiconductor layer; changing said second semiconductor layer partially remaining on a periphery of said processed first semiconductor layer into an oxide; and etching said third non-oxidizable insulating film exposed on a major surface side of said semiconductor structure to expose said second insulating film.
Claim 3
Dependent Claim
109 words
A method according to claim 1, further comprising the steps of: changing said first semiconductor layer into a semiconductor active layer of a first conductivity type; removing said second insulating film on said semiconductor active layer to form a gate oxide film; forming a gate electrode on said semiconductor active layer and forming an interconnection layer for connecting said gate electrode to another element; forming an insulating layer on said semiconductor structure; and forming a source electrode and a drain electrode connected to a source region and a drain region, respectively, through contact holes formed in said insulating layer and said gate oxide film arranged below said insulating layer.
Claim 4
Dependent Claim
37 words
A method according to claim 1, wherein after said fifth non-oxidizable insulating film is processed into predetermined planar dimensions, said exposed fourth insulating film is removed to expose said second semiconductor layer under said fourth insulating film.