Patent US3005321A successfully refreshed from Google Patents.
US4809056A
Expired / Lapsed
US
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Semiconductor device having a silicon on insulator structure
Assignee: Fujitsu Ltd
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Filing: 1986-10-24
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Granted: 1989-02-28
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Expires: 2006-10-24
Abstract
Abstract A semiconductor device having an SOI structure comprises an insular single crystal silicon body formed on an insulator layer, a first region of a first type semiconductor and source and drain regions of a second type semiconductor provided in the insular single crystal silicon body so that the first region is provided between the source and drain regions, a second region of the first type semiconductor in contact with the first region formed along a side of the source and drain regions, and a contact region of the first type semiconductor having an impurity density higher than those of the first and second regions formed in contact with the second region, so that a fixed voltage can be applied to the first region via the contact region.
Inventors
- 👤 Takehide Shirato
- 👤 Nobuhiko Aneha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:10
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6711; H10D30/6706; H10D30/674; H10D30/6755; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; Y; Y10; Y10S; Y10S257/00; Y10S257/901
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
177 words
A semiconductor device having a silicon on insulator structure comprising: an insulator layer; an insular body formed on said insulator layer, said insular body being made of a single crystal silicon doped to a first type semiconductor; a first region of the first type semiconductor provided in said insular body; first and second doped regions doped to a second type semiconductor respectively provided in said insular body on both sides of said first region, said first and second doped regions reaching a bottom of said insular body and having a width smaller than a width of said insular body; a second region doped to the first type semiconductor formed along at least one side of said first and second doped regions, said second region being in contact with said first region; and a contact region doped to the first type semiconductor formed in contact with said second region, said contact region having an impurity density greater than those of said first and second regions, said first region being applied with a fixed voltage via said contact region.
Claim 2
Dependent Claim
177 words
A semiconductor device having a silicon on insulator structure comprising: an insulator layer; an insular body formed on said insulator layer, said insular body being made of a single crystal silicon doped to a first type semiconductor; a first region of the first type semiconductor provided in said insular body; first and second doped regions doped to a second type semiconductor respectively provided in said insular body on both sides of said first region, said first and second doped regions reaching a bottom of said insular body and having a width smaller than a width of said insular body; a second region doped to the first type semiconductor formed along at least one side of said first and second doped regions, said second region being in contact with said first region; and a contact region doped to the first type semiconductor formed in contact with said second region, said contact region having an impurity density greater than those of said first and second regions, said first region being applied with a fixed voltage via said contact region.
Claim 3
Dependent Claim
31 words
A semiconductor device having a silicon on insulator structure as claimed in claim 1 in which said second region is formed along both sides of said first and second doped regions.
Claim 4
Dependent Claim
44 words
A semiconductor device having a silicon on insulator structure as claimed in claim 1 which further comprises a gate insulator layer formed on said first region across a width direction of said insular body, and a gate electrode formed on said gate insulator layer.
Claim 5
Dependent Claim
41 words
A semiconductor device having a silicon on insulator structure as claimed in claim 3 in which said contact region is formed at such a position that an end portion of said gate insulator layer overlaps a portion of said contact region.
Claim 6
Dependent Claim
33 words
A semiconductor device having a silicon on insulator structure as claimed in claim 3 in which said contact region is formed at such a position that avoids contact with said gate insulator layer.
Claim 7
Dependent Claim
31 words
A semiconductor device having a silicon on insulator structure as claimed in claim 1 in which said said contact region is formed at a position adjacent to said first doped region.
Claim 8
Dependent Claim
49 words
A semiconductor device having a silicon on insulator structure as claimed in claim 6 which further comprises an insulator layer provided between said first doped region and said contact region, said insulator layer between said second doped region and said contact region reaching the bottom of said insular body.
Claim 9
Dependent Claim
35 words
A semiconductor device having a silicon on insulator structure as claimed in claim 1 in which said first and second doped regions are source and drain regions of a metal oxide semiconductor field effect transistor.
Claim 10
Dependent Claim
82 words
A semiconductor device having a silicon on insulator structure as claimed in claim 1 which further comprises a gate insulator layer formed on said first region across a width direction of said insular body, a gate electrode formed on said gate insulator layer, a source wiring in contact with said first doped region, a drain wiring in contact with said second doped region, a gate wiring in contact with said gate electrode, and a contact wiring in contact with said contact region.
Claim 11
Dependent Claim
28 words
A semiconductor device having a silicon on insulator structure as claimed in claim 1 in which said first and second type semiconductors are p-type and n-type semiconductors, respectively.
Claim 12
Dependent Claim
28 words
A semiconductor device having a silicon on insulator structure as claimed in claim 1 in which said first and second type semiconductors are n-type and p-type semiconductors, respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-28 | 1992-08-29 | 1993-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-28 | 1996-08-29 | 1997-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-28 | 2000-08-29 | 2001-02-28 | $7700.00 | Window Closed / Lapsed |