US5859445A
Expired / Lapsed
US
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Electro-optical device including thin film transistors having spoiling impurities added thereto
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-02-14
•
Granted: 1999-01-12
•
Expires: 2017-02-14
Abstract
Abstract An electro-optical device having a plurality of pixel electrodes, each with at least one thin film transistor. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, or nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor includes immunity to illumination incident thereupon, which would otherwise impair the normal operation of the transistor. The spoiling impurity is not introduced into transistors that are located such that they do not receive light rays.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:05
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6733; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D30/675; H10D30/6757; H10D86/00; H10D86/40; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/13624; G02F1/136245
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
105 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrode s arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one inverted staggered type thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein at least said channel region is intentionally doped with at least one of oxygen, nitrogen and carbon for reducing a photosensitivity thereof.
Claim 2
Dependent Claim
105 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrode s arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one inverted staggered type thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein at least said channel region is intentionally doped with at least one of oxygen, nitrogen and carbon for reducing a photosensitivity thereof.
Claim 3
Dependent Claim
33 words
An electro-optical device according to claim 1 wherein drift of a drain current level passing through said channel region in an on-state of said transistor due to light incident thereupon is within 10%.
Claim 4
Dependent Claim
34 words
An electro-optical device according to claim 1 wherein drift of a drain current level passing through said channel region in an off-state of said transistor due to illumination is within two orders of magnitude.
Claim 5
Dependent Claim
29 words
An electro-optical device according to claim 1 wherein only said channel region is intentionally doped with at least one of oxygen, nitrogen and carbon for reducing a photosensitivity thereof.
Claim 6
Dependent Claim
19 words
The electro-optical device of claim 1 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
Claim 7
Dependent Claim
125 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one inverted staggered type thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein said channel region is intentionally doped with an impurity selected from the group consisting of oxygen, nitrogen and carbon so that a concentration of said impurity in said channel region is higher than that of said impurity in said source and drain regions.
Claim 8
Dependent Claim
125 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one inverted staggered type thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein said channel region is intentionally doped with an impurity selected from the group consisting of oxygen, nitrogen and carbon so that a concentration of said impurity in said channel region is higher than that of said impurity in said source and drain regions.
Claim 9
Dependent Claim
33 words
An electro-optical device according to claim 6 wherein drift of a drain current level passing through said channel region in an on-state of said transistor due to light incident thereupon is within 10%.
Claim 10
Dependent Claim
34 words
An electro-optical device according to claim 6 wherein drift of a drain current level passing through said channel region in an off-state of said transistor due to illumination is within two orders of magnitude.
Claim 11
Dependent Claim
18 words
An electro-optical device according to claim 6 wherein only said channel region is intentionally doped with said impurity.
Claim 12
Dependent Claim
19 words
The electro-optical device of claim 6 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
Claim 13
Dependent Claim
107 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein at least said channel region is intentionally doped with an impurity at a concentration higher than 1×10 19 atoms/cm 3 , said impurity comprising carbon, oxygen and nitrogen.
Claim 14
Dependent Claim
107 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein at least said channel region is intentionally doped with an impurity at a concentration higher than 1×10 19 atoms/cm 3 , said impurity comprising carbon, oxygen and nitrogen.
Claim 15
Dependent Claim
17 words
An electro-optical device according to claim 11 wherein said thin film transistor is an inverted staggered type.
Claim 16
Dependent Claim
33 words
An electro-optical device according to claim 11 wherein drift of a drain current level passing through said channel region in an on-state of said transistor due to light incident thereupon is within 10%.
Claim 17
Dependent Claim
34 words
An electro-optical device according to claim 11 wherein drift of a drain current level passing through said channel region in an off-state of said transistor due to illumination is within two orders of magnitude.
Claim 18
Dependent Claim
18 words
An electro-optical device according to claim 11 wherein only said channel region is intentionally doped with said impurity.
Claim 19
Dependent Claim
19 words
The electro-optical device of claim 11 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
Claim 20
Dependent Claim
125 words
An electro-optical device comprising; a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein said channel region is intentionally doped with an impurity at a concentration higher than 1×10 19 atoms/cm 3 , said impurity comprising carbon, oxygen and nitrogen, and a concentration of said impurity in said source and drain regions does not exceed 1×10 19 atoms/cm 3 .
Claim 21
Dependent Claim
125 words
An electro-optical device comprising; a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein said channel region is intentionally doped with an impurity at a concentration higher than 1×10 19 atoms/cm 3 , said impurity comprising carbon, oxygen and nitrogen, and a concentration of said impurity in said source and drain regions does not exceed 1×10 19 atoms/cm 3 .
Claim 22
Dependent Claim
17 words
An electro-optical device according to claim 17 wherein said thin film transistor is an inverted staggered type.
Claim 23
Dependent Claim
33 words
An electro-optical device according to claim 17 wherein drift of a drain current level passing through said channel region in an on-state of said transistor due to light incident thereupon is within 10%.
Claim 24
Dependent Claim
34 words
An electro-optical device according to claim 17 wherein drift of a drain current level passing through said channel region in an off-state of said transistor due to illumination is within two orders of magnitude.
Claim 25
Dependent Claim
18 words
An electro-optical device according to claim 17 wherein only said channel region is intentionally doped with said impurity.
Claim 26
Dependent Claim
19 words
The electro-optical device of claim 17 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
Claim 27
Dependent Claim
34 words
An electro-optical device according to claim 21 wherein drift of a drain current level passing through said channel region in an off-state of said transistor due to illumination is within two orders of magnitude.
Claim 28
Dependent Claim
107 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein at least said channel region is intentionally doped with an impurity at a concentration higher than 7×10 19 atoms/cm 3 , said impurity comprising carbon, oxygen and nitrogen.
Claim 29
Dependent Claim
107 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein at least said channel region is intentionally doped with an impurity at a concentration higher than 7×10 19 atoms/cm 3 , said impurity comprising carbon, oxygen and nitrogen.
Claim 30
Dependent Claim
17 words
An electro-optical device according to claim 24 wherein said thin film transistor is an inverted staggered type.
Claim 31
Dependent Claim
33 words
An electro-optical device according to claim 24 wherein drift of a drain current level passing through said channel region in an on-state of said transistor due to light incident thereupon is within 10%.
Claim 32
Dependent Claim
34 words
An electro-optical device according to claim 24 wherein drift of a drain current level passing through said channel region in an off-state of said transistor due to illumination is within two orders of magnitude.
Claim 33
Dependent Claim
18 words
An electro-optical device according to claim 24 wherein only said channel region is intentionally doped with said impurity.
Claim 34
Dependent Claim
19 words
The electro-optical device of claim 24 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
Claim 35
Dependent Claim
125 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein said channel region is intentionally doped with an impurity at a concentration higher than 7×10 19 atoms/cm 3 , said impurity comprising carbon, oxygen and nitrogen, and a concentration of said impurity in said source and drain regions does not exceed 7×10 19 atoms/cm 3 .
Claim 36
Dependent Claim
125 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel region and a gate insulator interposed between said channel region and said gate electrode, wherein said channel region is intentionally doped with an impurity at a concentration higher than 7×10 19 atoms/cm 3 , said impurity comprising carbon, oxygen and nitrogen, and a concentration of said impurity in said source and drain regions does not exceed 7×10 19 atoms/cm 3 .
Claim 37
Dependent Claim
17 words
An electro-optical device according to claim 30 wherein said thin film transistor is an inverted staggered type.
Claim 38
Dependent Claim
33 words
An electro-optical device according to claim 30 wherein drift of a drain current level passing through said channel region in an on-state of said transistor due to light incident thereupon is within 10%.
Claim 39
Dependent Claim
18 words
An electro-optical device according to claim 30 wherein only said channel region is intentionally doped with said impurity.
Claim 40
Dependent Claim
19 words
The electro-optical device of claim 30 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
Claim 41
Dependent Claim
113 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix form over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel semiconductor region and a gate insulator interposed between said channel semiconductor region and said gate electrode, wherein said channel semiconductor region contains an impurity selected from the group consisting of oxygen, nitrogen and carbon at a higher concentration than said source and drain semiconductor regions contain said impurity.
Claim 42
Dependent Claim
113 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix form over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel semiconductor region and a gate insulator interposed between said channel semiconductor region and said gate electrode, wherein said channel semiconductor region contains an impurity selected from the group consisting of oxygen, nitrogen and carbon at a higher concentration than said source and drain semiconductor regions contain said impurity.
Claim 43
Dependent Claim
18 words
An electro-optical device according to claim 35 wherein said channel semiconductor region comprises non-single crystal silicon containing hydrogen.
Claim 44
Dependent Claim
19 words
The electro-optical device of claim 35 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
Claim 45
Dependent Claim
127 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix form over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel semiconductor region and a gate insulator interposed between said channel semiconductor region and said gate electrode, wherein said channel semiconductor region contains carbon, oxygen and nitrogen at a total concentration higher than 1×10 19 atoms/cm 3 , and a total concentration of said carbon, oxygen and nitrogen in said source and drain semiconductor regions does not exceed 1×10 19 atoms/cm 3 .
Claim 46
Dependent Claim
127 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix form over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel semiconductor region and a gate insulator interposed between said channel semiconductor region and said gate electrode, wherein said channel semiconductor region contains carbon, oxygen and nitrogen at a total concentration higher than 1×10 19 atoms/cm 3 , and a total concentration of said carbon, oxygen and nitrogen in said source and drain semiconductor regions does not exceed 1×10 19 atoms/cm 3 .
Claim 47
Dependent Claim
18 words
An electro-optical device according to claim 38 wherein said channel semiconductor region comprises non-single crystal silicon containing hydrogen.
Claim 48
Dependent Claim
19 words
The electro-optical device of claim 38 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
Claim 49
Dependent Claim
130 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix form over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel semiconductor region and a gate insulator interposed between said channel semiconductor region and said gate electrode, wherein a concentration of carbon, oxygen or nitrogen in said channel semiconductor region is greater than that in said source and drain semiconductor regions, and a total concentration of said carbon, oxygen and nitrogen in said source and drain semiconductor regions does not exceed 1×10 19 atoms/cm 3 .
Claim 50
Dependent Claim
130 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix form over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel semiconductor region and a gate insulator interposed between said channel semiconductor region and said gate electrode, wherein a concentration of carbon, oxygen or nitrogen in said channel semiconductor region is greater than that in said source and drain semiconductor regions, and a total concentration of said carbon, oxygen and nitrogen in said source and drain semiconductor regions does not exceed 1×10 19 atoms/cm 3 .
Claim 51
Dependent Claim
18 words
An electro-optical device according to claim 41 wherein said channel semiconductor region comprises non-single crystal silicon containing hydrogen.
Claim 52
Dependent Claim
19 words
The electro-optical device of claim 41 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
Claim 53
Dependent Claim
128 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix form over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel semiconductor region and a gate insulator interposed between said channel semiconductor region and said gate electrode, wherein a concentration of carbon, oxygen or nitrogen in said channel semiconductor region is greater than that in said source and drain semiconductor regions, and a total concentration of said carbon, oxygen and nitrogen in said channel semiconductor region is higher than 1×10 19 atoms/cm 3 .
Claim 54
Dependent Claim
128 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix form over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel semiconductor region and a gate insulator interposed between said channel semiconductor region and said gate electrode, wherein a concentration of carbon, oxygen or nitrogen in said channel semiconductor region is greater than that in said source and drain semiconductor regions, and a total concentration of said carbon, oxygen and nitrogen in said channel semiconductor region is higher than 1×10 19 atoms/cm 3 .
Claim 55
Dependent Claim
18 words
An electro-optical device according to claim 44 wherein said channel semiconductor region comprises non-single crystal silicon containing hydrogen.
Claim 56
Dependent Claim
19 words
The electro-optical device of claim 44 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
Claim 57
Dependent Claim
115 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix form over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel semiconductor region and a gate insulator interposed between said channel semiconductor region and said gate electrode, wherein a concentration of carbon, oxygen or nitrogen in said channel semiconductor region is greater than 1×10 20 atoms/cm 3 and said concentration is greater than that in said source and drain semiconductor regions.
Claim 58
Dependent Claim
115 words
An electro-optical device comprising: a substrate having an insulating surface; a plurality of pixel electrodes arranged in a matrix form over said substrate, each of said pixel electrodes provided with at least one thin film transistor; and said thin film transistor comprising source and drain semiconductor regions, a channel semiconductor region between said source and drain semiconductor regions, a gate electrode adjacent to said channel semiconductor region and a gate insulator interposed between said channel semiconductor region and said gate electrode, wherein a concentration of carbon, oxygen or nitrogen in said channel semiconductor region is greater than 1×10 20 atoms/cm 3 and said concentration is greater than that in said source and drain semiconductor regions.
Claim 59
Dependent Claim
18 words
An electro-optical device according to claim 47 wherein said channel semiconductor region comprises non-single crystal silicon containing hydrogen.
Claim 60
Dependent Claim
19 words
The electro-optical device of claim 47 further comprising a liquid crystal layer adjacent to said plurality of pixel electrodes.
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