Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the efficiency of photoelectric conversion by passing a reactive gas for a semiconductor through a porous molecular adsorbing material, which has the effective hold diameters of 2.9-4.65Angstrom and is cooled, and using the gas, the concentration of phosphorus therein is extremely low. CONSTITUTION:P Promotes particularly insulating property to an intrinsic semiconductor generating photovoltage or combines with a P type impurity, lowers particularly the diffusion length of holes, and further generates a recombination center and is noxious. Since the effective molecular diameter of the reactive gas for the semiconductor is 4.8Angstrom or more while that of P is 4.5Angstrom or less, a thermostatic chamber in which a molecular sieve of a 2.9-4.65Angstrom effective molecular diameter or zeolite is kept at -20--40 deg.C is prepared, the reactive gas is passed, P, particularly, PH3 is adsorbed, the gas is purified up to 1X 10<16>cm<-3> or less while an oxide gas, a carbide gas, etc. are adsorbed and removed simultaneously, and the gas is purified. When the gas of the purified silicide and germanide is plasma-vapor reacted, a non-single crystalline semiconductor is formed on the surface to be formed at 100-400 deg.C and junctions PI, NI, etc. are manufactured, the high efficiency of photoelectric conversion is obtained.

Inventors

• 👤 Shunpei Yamazaki
• 👤 舜平 山崎

Bibliographic Details