Liquid crystal display device with TFT's each including a Ta gate electrode and an anodized Al oxide film

Claim 2

A thin-film transistor comprising: a substrate; a gate electrode including a first-level conducting film of tantalum formed on said substrate and a second-level conducting film of aluminum formed over said first-level layer; a gate insulating film formed on said second-level conducting film including a third-level insulating film formed of an oxidized film of said secondlevel conducting film; a semiconductor film formed over said gate insulating film; and a pair of source and drain electrodes formed apart from each other over said semiconductor film so that said gate electrode is laid across among said pair.

Claim 3

The thin-film transistors according to claim 1, wherein said gate insulating film further includes a fourth-level insulating film, of different material from said oxidized film, formed between said third-level insulating film and said semiconductor film.

Claim 4

The thin-film transistor according to claim 2, wherein said oxidized film is an anodized film of said second-level conducting film, said fourth-level insulating film is comprised of silicon nitride and said semiconductor film is comprised of silicon.

Claim 5

A liquid crystal display device comprising: a first substrate and a second substrate; a liquid crystal layer formed between said first and second substrates; a plurality of thin-film transistors formed between said first substrate and said liquid crystal layer each including a gate electrode, a semiconductor film, a gate insulating film formed between said semiconductor film and said gate electrode and source and drain electrodes formed apart form each other; a plurality of pixel electrodes each electrically connected with one of said source and drain electrodes of each of said thin-film transistors; a plurality of row conducting lines each electrically connected with each said gate electrode of associated thin-film transistors; a plurality of column conducting lines each electrically connected with the other one of said source and drain electrodes of said associated thin-film transistors; a first-level conducting film comprised of tantalum formed on said first substrate; a second-level conducting film comprised of aluminum formed over said first-level conducting film, wherein said first-level conducting film and said second-level conducting film together comprise said gate electrodes and said two conducting lines; and a third-level insulating film being of an oxidized film and formed on the upper surface of said second-level conducting film providing said gate insulating film and an intersection insulator between each of said row conducting lines and each of said column conducting lines at the intersection thereof.

Claim 6

A liquid crystal display device comprising: a first substrate and a second substrate; a liquid crystal layer formed between said first and second substrates; a plurality of thin-film transistors formed between said first substrate and said liquid crystal layer each including a gate electrode, a semiconductor film, a gate insulating film formed between said semiconductor film and said gate electrode and source and drain electrodes formed apart form each other; a plurality of pixel electrodes each electrically connected with one of said source and drain electrodes of each of said thin-film transistors; a plurality of row conducting lines each electrically connected with each said gate electrode of associated thin-film transistors; a plurality of column conducting lines each electrically connected with the other one of said source and drain electrodes of said associated thin-film transistors; a first-level conducting film comprised of tantalum formed on said first substrate; a second-level conducting film comprised of aluminum formed over said first-level conducting film, wherein said first-level conducting film and said second-level conducting film together comprise said gate electrodes and said two conducting lines; and a third-level insulating film being of an oxidized film and formed on the upper surface of said second-level conducting film providing said gate insulating film and an intersection insulator between each of said row conducting lines and each of said column conducting lines at the intersection thereof.

Claim 7

The liquid crystal display device according to claim 4, wherein said gate insulating film and said intersection insulator further include a fourth-level insulating film formed over said third-level insulating film and comprised of different material therefrom.

Claim 8

The thin-film transistor according to claim 3, wherein said substrate is a transparent glass substrate, and wherein said semiconductor film is an i-type amorphous Si semiconductor layer.

Claim 9

The thin-film transistor according to claim 1, wherein said substrate is a transparent glass substrate, and wherein said semiconductor film is an i-type amorphous Si semiconductor layer.

Claim 10

The thin-film transistor according to claim 3, wherein said substrate is a transparent glass substrate, and wherein said semiconductor film is a polycrystalline silicon film.

Claim 11

The tin-film transistor according to claim 1, wherein said substrate is a transparent glass substrate, and wherein said semiconductor film is a polycrystalline silicon film.

Claim 12

The liquid crystal display device according to claim 5, wherein said first and second substrates are transparent glass substrates, and wherein said semiconductor film is an i-type amorphous Si semiconductor layer.

Claim 13

The liquid crystal display device according to claim 4, wherein said first and second substrates are transparent glass substrate, and wherein said semiconductor film is an i-type amorphous Si semiconductor layer.

Claim 14

The liquid crystal display device according to claim 5, wherein said first and second substrates are transparent glass substrates, and wherein said semiconductor film is a polycrystalline silicon film.

Claim 15

The liquid crystal display device according to claim 4, wherein said first and second substrates are transparent glass substrates, and wherein said semiconductor film is a polycrystalline silicon film.