Method of making semiconductor device
Abstract
Abstract A SEMICONDUCTOR DEVICE IS MADE BY FORMING ON THE SURFACE OF AN ELECTRICAL INSULATING SUBSTRATE A PLURALITY OF SPACED REGIONS OF A SEMICONDUCTOR MATERIAL. A MASKING LAYER IS PROVIDED ON THE SURFACE OF EACH SEMICONDUCTOR REGION. A LAYER OF AN ELECTRICAL INSULATING MATERIAL IS COATED ON THE SURFACE OF THE SUBSTRATE BETWEEN THE AROUND THE SEMICONDUCTOR REGIONS AND OVER THE MASKING LAYERS ON THE SEMICONDUCTOR REGIONS. A PHOTOSENSITIVE RESIST IS COATED OVER THE INSULATING LAYER. OPENINGS ARE PROVIDED IN THE RESIST OVER EACH OF THE SEMICONDUCTOR REGIONS USING THE MASKING LAYERS TO DEFINE THE OPENINGS. THE EXPOSED PORTIONS OF THE INSULATING LAYER OVER EACH OF THE SEMICONDUCTOR REGIONS AND REMOVED LEAVING THE INSULATING LAYER BETWEEN AND AROUND THE SEMICONDUCTOR REGIONS.
Inventors
- 👤 R Ronen
Bibliographic Details
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USPTO Annuity & Maintenance Windows
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| 3.5 Years (Year 4) | 1976-06-18 | 1976-12-18 | 1977-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-18 | 1980-12-18 | 1981-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-18 | 1984-12-18 | 1985-06-19 | $7700.00 | Window Closed / Lapsed |