Manufacture of thin-film transistor

Abstract

Abstract PURPOSE:To obtain a stable gate insulating film resulting in little trap, and to improve the characteristics of the thin-film transistor by a method wherein two kinds of metallic layers are laminted to an insulating substrate, both layers are anodic-oxidized simultaneously, only the metallic oxide of an upper layer is removed through etching, and the metallic oxide film of a lower layer is used as the gate insulating film. CONSTITUTION:A thin base coated layer is formed onto the glass substrate 1, and the first layer bulb metal 3' is shaped onto the base coated layer through evaporation or sputtering. Ta is used as the bulb metal 3'. The second layer bulb metal 8 is formed onto the first layer bulb metal 3' through evaporation or sputtering. Nb is employed as the bulb metal 8. The film thickness of the second layer bulb metal 8 is approximately 200-500Angstrom . The two layers of the bulb metals 3', 8 are treated simultaneously through an anodic oxidation method. The whole oxide layer 9 is removed. Washing by flowing water, washing by steam, heat treatment, etc. are executed, an electrode metal and a semiconductor are mounted, and a transistor element is formed.

Inventors

• 👤 Hiroaki Kato
• 👤 博章 加藤
• 👤 Kohei Kishi
• 👤 岸　幸平
• 👤 Yutaka Takato
• 👤 裕 高藤

Bibliographic Details