US6441399B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated system
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1999-01-13
•
Granted: 2002-08-27
•
Expires: 2019-01-13
Abstract
Abstract In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel TFTs.
Inventors
- 👤 Jun Koyama
- 👤 Yuji Kawasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:49
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; H; H10; H10D; H10D86/00; H10D86/40; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/6737; H10D30/6739; H10D86/60
Claims Analysis
Total Claims: 64
Claim 1
Independent Claim
150 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a driver circuit comprising a plurality of second thin film transistors formed over said substrate for driving said first thin film transistors, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 2
Dependent Claim
150 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a driver circuit comprising a plurality of second thin film transistors formed over said substrate for driving said first thin film transistors, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 3
Dependent Claim
15 words
The semiconductor device according to claim 1 wherein said driver circuit comprises a shift register.
Claim 4
Dependent Claim
43 words
The semiconductor device according to claim 1 wherein at least one of said second thin film transistors has its channel region doped with boron and at least another one of said second thin film transistors has its channel region not doped with boron.
Claim 5
Dependent Claim
13 words
The semiconductor device according to claim 1 wherein said pixel electrodes are transparent.
Claim 6
Dependent Claim
15 words
The semiconductor device according to claim 1 wherein said interlayer insulating film comprises silicon oxide.
Claim 7
Dependent Claim
15 words
The semiconductor device according to claim 1 wherein said interlayer insulating film comprises silicon nitride.
Claim 8
Dependent Claim
178 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels, formed over a substrate having an insulating surface; a driver circuit comprising a plurality of second thin film transistors formed over said substrate for driving said first thin film transistors, each of said first and second thin film transistors comprising a crystalline semiconductor layer having source and drain regions and a channel forming region extending therebetween, a gate insulating film formed on said channel forming region and a gate electrode formed on said gate insulating film; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type film transistors.
Claim 9
Dependent Claim
178 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels, formed over a substrate having an insulating surface; a driver circuit comprising a plurality of second thin film transistors formed over said substrate for driving said first thin film transistors, each of said first and second thin film transistors comprising a crystalline semiconductor layer having source and drain regions and a channel forming region extending therebetween, a gate insulating film formed on said channel forming region and a gate electrode formed on said gate insulating film; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type film transistors.
Claim 10
Dependent Claim
15 words
The semiconductor device according to claim 7 wherein said driver circuit comprises a shift register.
Claim 11
Dependent Claim
43 words
The semiconductor device according to claim 7 wherein at least one of said second thin film transistors has its channel region doped with boron and at least another one of said second thin film transistors has its channel region not doped with boron.
Claim 12
Dependent Claim
13 words
The semiconductor device according to claim 7 wherein said pixel electrodes are transparent.
Claim 13
Dependent Claim
15 words
The semiconductor device according to claim 7 wherein said interlayer insulating film comprises silicon oxide.
Claim 14
Dependent Claim
15 words
The semiconductor device according to claim 7 wherein said interlayer insulating film comprises silicon nitride.
Claim 15
Dependent Claim
158 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a driver circuit comprising a plurality of second thin film transistors formed over said substrate for driving said first thin film transistors, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof; and a semiconductor chip formed over the substrate, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 16
Dependent Claim
158 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a driver circuit comprising a plurality of second thin film transistors formed over said substrate for driving said first thin film transistors, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof; and a semiconductor chip formed over the substrate, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 17
Dependent Claim
15 words
The semiconductor device according to claim 13 wherein said driver circuit comprises a shift register.
Claim 18
Dependent Claim
43 words
The semiconductor device according to claim 13 wherein at least one of said second thin film transistors has its channel region doped with boron and at least another one of said second thin film transistors has its channel region not doped with boron.
Claim 19
Dependent Claim
13 words
The semiconductor device according to claim 13 wherein said pixel electrodes are transparent.
Claim 20
Dependent Claim
15 words
The semiconductor device according to claim 13 wherein said interlayer insulating film comprises silicon oxide.
Claim 21
Dependent Claim
15 words
The semiconductor device according to claim 13 wherein said interlayer insulating film comprises silicon nitride.
Claim 22
Dependent Claim
21 words
The semiconductor device according to claim 13 wherein each of said first and second thin film transistors has an offset structure.
Claim 23
Dependent Claim
27 words
The semiconductor device according to claim 13 wherein said semiconductor chip is at least one of a correction memory, a memory, a CPU and an input port.
Claim 24
Dependent Claim
26 words
The semiconductor device according to claim 13 wherein each of said first and second thin film transistor has a gate electrode over the channel forming region.
Claim 25
Dependent Claim
150 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a driver circuit comprising a plurality of second thin film transistors formed over said substrate for driving said first thin film transistors, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of conductors formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 26
Dependent Claim
150 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a driver circuit comprising a plurality of second thin film transistors formed over said substrate for driving said first thin film transistors, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of conductors formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 27
Dependent Claim
13 words
The semiconductor device according to claim 22 wherein said pixel electrodes are transparent.
Claim 28
Dependent Claim
15 words
The semiconductor device according to claim 22 wherein said interlayer insulating film comprises silicon oxide.
Claim 29
Dependent Claim
15 words
The semiconductor device according to claim 22 wherein said interlayer insulating film comprises silicon nitride.
Claim 30
Dependent Claim
21 words
The semiconductor device according to claim 22 wherein each of said first and second thin film transistors has an offset structure.
Claim 31
Dependent Claim
16 words
The semiconductor device according to claim 22 further comprising a semiconductor chip formed over the substrate.
Claim 32
Dependent Claim
26 words
The semiconductor device according to claim 22 wherein each of said first and second thin film transistor has a gate electrode over the channel forming region.
Claim 33
Dependent Claim
144 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a source driver circuit comprising a plurality of second thin film transistors formed over said substrate, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of conductors formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 34
Dependent Claim
144 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a source driver circuit comprising a plurality of second thin film transistors formed over said substrate, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of conductors formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 35
Dependent Claim
13 words
The semiconductor device according to claim 29 wherein said pixel electrodes are transparent.
Claim 36
Dependent Claim
15 words
The semiconductor device according to claim 29 wherein said interlayer insulating film comprises silicon oxide.
Claim 37
Dependent Claim
15 words
The semiconductor device according to claim 29 wherein said interlayer insulating film comprises silicon nitride.
Claim 38
Dependent Claim
21 words
The semiconductor device according to claim 29 wherein each of said first and second thin film transistors has an offset structure.
Claim 39
Dependent Claim
16 words
The semiconductor device according to claim 29 further comprising a semiconductor chip formed over the substrate.
Claim 40
Dependent Claim
26 words
The semiconductor device according to claim 29 wherein each of said first and second thin film transistor has a gate electrode over the channel forming region.
Claim 41
Dependent Claim
144 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a gate driver circuit comprising a plurality of second thin film transistors formed over said substrate, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of conductors formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 42
Dependent Claim
144 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a gate driver circuit comprising a plurality of second thin film transistors formed over said substrate, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of conductors formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 43
Dependent Claim
13 words
The semiconductor device according to claim 36 wherein said pixel electrodes are transparent.
Claim 44
Dependent Claim
15 words
The semiconductor device according to claim 36 wherein said interlayer insulating film comprises silicon oxide.
Claim 45
Dependent Claim
15 words
The semiconductor device according to claim 36 wherein said interlayer insulating film comprises silicon nitride.
Claim 46
Dependent Claim
21 words
The semiconductor device according to claim 36 wherein each of said first and second thin film transistors has an offset structure.
Claim 47
Dependent Claim
16 words
The semiconductor device according to claim 36 further comprising a semiconductor chip formed over the substrate.
Claim 48
Dependent Claim
26 words
The semiconductor device according to claim 36 wherein each of said first and second thin film transistor has a gate electrode over the channel forming region.
Claim 49
Dependent Claim
144 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a source driver circuit comprising a plurality of second thin film transistors formed over said substrate, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 50
Dependent Claim
144 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a source driver circuit comprising a plurality of second thin film transistors formed over said substrate, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 51
Dependent Claim
13 words
The semiconductor device according to claim 43 wherein said pixel electrodes are transparent.
Claim 52
Dependent Claim
15 words
The semiconductor device according to claim 43 wherein said interlayer insulating film comprises silicon oxide.
Claim 53
Dependent Claim
15 words
The semiconductor device according to claim 43 wherein said interlayer insulating film comprises silicon nitride.
Claim 54
Dependent Claim
21 words
The semiconductor device according to claim 43 wherein each of said first and second thin film transistors has an offset structure.
Claim 55
Dependent Claim
16 words
The semiconductor device according to claim 43 further comprising a semiconductor chip formed over the substrate.
Claim 56
Dependent Claim
26 words
The semiconductor device according to claim 43 wherein each of said first and second thin film transistor has a gate electrode over the channel forming region.
Claim 57
Dependent Claim
144 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a gate driver circuit comprising a plurality of second thin film transistors formed over said substrate, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 58
Dependent Claim
144 words
A semiconductor device comprising: a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface; a gate driver circuit comprising a plurality of second thin film transistors formed over said substrate, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon; an interlayer insulating film formed over said first thin film transistors and said second thin film transistors; a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof; a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.
Claim 59
Dependent Claim
13 words
The semiconductor device according to claim 50 wherein said pixel electrodes are transparent.
Claim 60
Dependent Claim
14 words
semiconductor device according to claim 50 wherein said interlayer insulating film comprises silicon oxide.
Claim 61
Dependent Claim
15 words
The semiconductor device according to claim 50 wherein said interlayer insulating film comprises silicon nitride.
Claim 62
Dependent Claim
21 words
The semiconductor device according to claim 50 wherein each of said first and second thin film transistors has an offset structure.
Claim 63
Dependent Claim
16 words
The semiconductor device according to claim 50 further comprising a semiconductor chip formed over the substrate.
Claim 64
Dependent Claim
26 words
The semiconductor device according to claim 50 wherein each of said first and second thin film transistor has a gate electrode over the channel forming region.
References Cited (Backward Citations)
US3988214A
Cited
US3806778A
Cited
US3820108A
Cited
US3935083A
Cited
US3988616A
Cited
US4803530A
Cited
US4380008A
Cited
US4232327A
Cited
US4368523A
Cited
US4413256A
Cited
US4409724A
Cited
US4357179A
Cited
US4470060A
Cited
US4646426A
Cited
US4468855A
Cited
US4525436A
Cited
US4557036A
Cited
US5294555A
Cited
US4716403A
Cited
US4746628A
Cited
US4605972A
Cited
US4762806A
Cited
US4641156A
Cited
US4762807A
Cited
US4884079A
Cited
US4727044A
Cited
US4959700A
Cited
US4818077A
Cited
US4693770A
Cited
US4804953A
Cited
US4597160A
Cited
US4757028A
Cited
US4772927A
Cited
US4709993A
Cited
US4808991A
Cited
US5170244A
Cited
US4783143A
Cited
US4942441A
Cited
US4836654A
Cited
US4769713A
Cited
US4775641A
Cited
US4838654A
Cited
US4728617A
Cited
US4994877A
Cited
US4816893A
Cited
US4931787A
Cited
US4851827A
Cited
US5132754A
Cited
US4938565A
Cited
US4929058A
Cited
US4930874A
Cited
US4960719A
Cited
US4916090A
Cited
US5151689A
Cited
US5274279A
Cited
US4905066A
Cited
US5053354A
Cited
US5111261A
Cited
US5097311A
Cited
US5117298A
Cited
US5287095A
Cited
US5173792A
Cited
US5122889A
Cited
US5132677A
Cited
US5245207A
Cited
US5162901A
Cited
US5272361A
Cited
US5081523A
Cited
US5111060A
Cited
US5063378A
Cited
US5038368A
Cited
US5165073A
Cited
US5100810A
Cited
US5275872A
Cited
US5064775A
Cited
US5514879A
Cited
US5294811A
Cited
US5165075A
Cited
US5424752A
Cited
US5701167A
Cited
US5453858A
Cited
US5849601A
Cited
US5349226A
Cited
US5525822A
Cited
US5521107A
Cited
US5854494A
Cited
US6028333A
Cited
US5218464A
Cited
US5821559A
Cited
US5365080A
Cited
US5261156A
Cited
US5113134A
Cited
US5474945A
Cited
US5468987A
Cited
US5289030A
Cited
US5946561A
Cited
US5404175A
Cited
US5281840A
Cited
US5426526A
Cited
US5280280A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-08-26 | 2006-02-25 | 2006-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-26 | 2010-02-25 | 2010-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-26 | 2014-02-25 | 2014-08-27 | $7700.00 | Window Closed / Lapsed |