Patent DE1812901A1 successfully refreshed from Google Patents.
US6720027B2
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Cyclical deposition of a variable content titanium silicon nitride layer
Assignee: Applied Materials Inc
•
Filing: 2002-04-08
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Granted: 2004-04-13
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Expires: 2022-04-08
Abstract
Abstract Embodiments of the invention relate to an apparatus and method of depositing a titanium silicon nitride layer by cyclical deposition. In one aspect, a titanium silicon nitride layer having a variable content or a controlled composition of titanium, silicon, and nitrogen through the depth of the layer may be formed. One embodiment of this variable content titanium silicon nitride layer or tuned titanium silicon nitride layer includes a bottom sub-layer of TiSi X1 N Y1 , a middle sub-layer of TiSi X2 N Y2 , and a top sub-layer of TiSi X3 N Y3 in which X1 is less than X2 and X3 is less than X2. Another embodiment of a variable content titanium silicon nitride layer includes a bottom sub-layer of TiSi X1 N Y1 and a top sub-layer of TiSi X2 N Y2 in which X2 is greater than X1. Still another embodiment of a variable content titanium silicon nitride layer includes a bottom sub-layer of TiSi X1 N Y1 , a middle sub-layer of TiSi X2 N Y2 , and a top sub-layer of TiSi X3 N Y3 in which X1 is greater than X2 and X3 is greater than X2.
Inventors
- 👤 Michael X. Yang
- 👤 Ming Xi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:19
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/22; C23C16/30; C23C16/34; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/45544; C23C16/45563; C23C16/45565; C23C16/45574; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/071; H10W20/081; H10W20/084; H10W20/0375; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24942; Y10T428/2495; Y10T428/24967; Y10T428/24975; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
57 words
A method of forming a variable content titanium silicon nitride layer, comprising: (a) providing pulses of a titanium precursor; (b) providing pulses of a silicon precursor and providing pulses of a nitrogen precursor at a ratio of the silicon precursor to the nitrogen precursor; and (c) decreasing the ratio of the silicon precursor to the nitrogen precursor.
Claim 2
Independent Claim
57 words
A method of forming a variable content titanium silicon nitride layer, comprising: (a) providing pulses of a titanium precursor; (b) providing pulses of a silicon precursor and providing pulses of a nitrogen precursor at a ratio of the silicon precursor to the nitrogen precursor; and (c) decreasing the ratio of the silicon precursor to the nitrogen precursor.
Claim 3
Dependent Claim
59 words
The method of claim 1 , wherein providing pulses of a titanium precursor comprises dosing pulses of the titanium precursor into a purge gas stream and wherein providing pulses of a silicon precursor and providing pulses of a nitrogen precursor comprises dosing pulses of the silicon precursor and dosing pulses of the nitrogen precursor into a purge gas stream.
Claim 4
Dependent Claim
31 words
The method of claim 1 , further comprising providing pulses of a purge gas between the pulses of the titanium precursor and pulses of the silicon precursor and the nitrogen precursor.
Claim 5
Dependent Claim
21 words
The method of claim 1 , wherein the pulses of the silicon precursor and the nitrogen precursor at least partially overlap.
Claim 6
Dependent Claim
20 words
The method of claim 1 , wherein the pulses of the silicon precursor and the nitrogen precursor are delivered separately.
Claim 7
Dependent Claim
20 words
The method of claim 1 , wherein the variable content titanium silicon nitride layer is formed over a titanium layer.
Claim 8
Dependent Claim
20 words
The method of claim 6 , wherein at least a portion of the titanium layer is converted to titanium suicide.
Claim 9
Dependent Claim
17 words
The method of claim 6 , wherein the titanium layer is deposited over a metal silicide layer.
Claim 10
Independent Claim
104 words
A method of processing a substrate, comprising: forming a variable content titanium silicon nitride layer, comprising: delivering a silicon precursor, a titanium precursor, and a nitrogen precursor to the substrate at a first ratio of silicon precursor to nitrogen precursor, and delivering the silicon precursor, the titanium precursor, and the nitrogen precursor to the substrate at a second ratio of silicon precursor to nitrogen precursor, and delivering the silicon precursor, the titanium precursor, and the nitrogen precursor to the substrate at a third ratio of silicon precursor to nitrogen precursor; and forming a copper material layer over the variable content titanium silicon nitride layer.
Claim 11
Independent Claim
104 words
A method of processing a substrate, comprising: forming a variable content titanium silicon nitride layer, comprising: delivering a silicon precursor, a titanium precursor, and a nitrogen precursor to the substrate at a first ratio of silicon precursor to nitrogen precursor, and delivering the silicon precursor, the titanium precursor, and the nitrogen precursor to the substrate at a second ratio of silicon precursor to nitrogen precursor, and delivering the silicon precursor, the titanium precursor, and the nitrogen precursor to the substrate at a third ratio of silicon precursor to nitrogen precursor; and forming a copper material layer over the variable content titanium silicon nitride layer.
Claim 12
Dependent Claim
27 words
The method of claim 9 , wherein the first ratio is less than the second ratio and wherein the third ratio is less than the second ratio.
Claim 13
Dependent Claim
20 words
The method of claim 10 , wherein the variable content titanium silicon nitride layer is formed over a dielectric layer.
Claim 14
Dependent Claim
15 words
The method of claim 11 , wherein the dielectric layer comprises a low-k dielectric layer.
Claim 15
Dependent Claim
26 words
The method of claim 12 , wherein the dielectric layer comprises a low-k material selected from the group including oxidized organosilane film and oxidized organosiloxane film.
Claim 16
Independent Claim
69 words
A method of forming a variable content titanium silicon nitride layer, comprising: (a) providing pulses of a titanium precursor; (b) providing pulses of a silicon precursor and providing pulses of a nitrogen precursor at a ratio of the silicon precursor to the nitrogen precursor; (c) increasing the ratio of the silicon precursor to the nitrogen precursor; and (d) decreasing the ratio of the silicon precursor to the nitrogen precursor.
Claim 17
Independent Claim
69 words
A method of forming a variable content titanium silicon nitride layer, comprising: (a) providing pulses of a titanium precursor; (b) providing pulses of a silicon precursor and providing pulses of a nitrogen precursor at a ratio of the silicon precursor to the nitrogen precursor; (c) increasing the ratio of the silicon precursor to the nitrogen precursor; and (d) decreasing the ratio of the silicon precursor to the nitrogen precursor.
Claim 18
Dependent Claim
27 words
The method of claim 14 , wherein the variable content titanium silicon nitride layer is formed over a dielectric layer and a conductive material layer comprising copper.
Claim 19
Dependent Claim
59 words
The method of claim 14 , wherein providing pulses of a titanium precursor comprises dosing pulses of the titanium precursor into a purge gas stream and wherein providing pulses of a silicon precursor and providing pulses of a nitrogen precursor comprises dosing pulses of the silicon precursor and dosing pulses of the nitrogen precursor into a purge gas stream.
Claim 20
Dependent Claim
31 words
The method of claim 14 , further comprising providing pulses of a purge gas between the pulses of the titanium precursor and pulses of the silicon precursor and the nitrogen precursor.
Claim 21
Dependent Claim
21 words
The method of claim 14 , wherein the pulses of the silicon precursor and the nitrogen precursor at least partially overlap.
Claim 22
Dependent Claim
20 words
The method of claim 14 , wherein the pulses of the silicon precursor and the nitrogen precursor are delivered separately.
Claim 23
Dependent Claim
23 words
The method of claim 14 , wherein the variable content titanium silicon nitride layer is formed over a conductive material layer comprising copper.
Claim 24
Dependent Claim
20 words
The method of claim 14 , wherein the variable content titanium silicon nitride layer is formed over a dielectric layer.
Claim 25
Dependent Claim
15 words
The method of claim 21 , wherein the dielectric layer comprises a low-k dielectric layer.
Claim 26
Dependent Claim
26 words
The method of claim 22 , wherein the dielectric layer comprises a low-k material selected from the group including oxidized organosilane film and oxidized organosiloxane film.
Claim 27
Independent Claim
69 words
A method of forming a variable content titanium silicon nitride layer, comprising: (a) providing pulses of a titanium precursor; (b) providing pulses of a silicon precursor and providing pulses of a nitrogen precursor at a ratio of the silicon precursor to the nitrogen precursor; (c) decreasing the ratio of the silicon precursor to the nitrogen precursor; and (d) increasing the ratio of the silicon precursor to the nitrogen precursor.
Claim 28
Independent Claim
69 words
A method of forming a variable content titanium silicon nitride layer, comprising: (a) providing pulses of a titanium precursor; (b) providing pulses of a silicon precursor and providing pulses of a nitrogen precursor at a ratio of the silicon precursor to the nitrogen precursor; (c) decreasing the ratio of the silicon precursor to the nitrogen precursor; and (d) increasing the ratio of the silicon precursor to the nitrogen precursor.
Claim 29
Dependent Claim
59 words
The method of claim 24 , wherein providing pulses of a titanium precursor comprises dosing pulses of the titanium precursor into a purge gas stream and wherein providing pulses of a silicon precursor and providing pulses of a nitrogen precursor comprises dosing pulses of the silicon precursor and dosing pulses of the nitrogen precursor into a purge gas stream.
Claim 30
Dependent Claim
31 words
The method of claim 24 , further comprising providing pulses of a purge gas between the pulses of the titanium precursor and pulses of the silicon precursor and the nitrogen precursor.
Claim 31
Dependent Claim
21 words
The method of claim 24 , wherein the pulses of the silicon precursor and the nitrogen precursor at least partially overlap.
Claim 32
Dependent Claim
20 words
The method of claim 24 , wherein the pulses of the silicon precursor and the nitrogen precursor are delivered separately.
Claim 33
Dependent Claim
20 words
The method of claim 24 , wherein the variable content titanium silicon nitride layer is formed over a titanium layer.
Claim 34
Dependent Claim
19 words
The method of claim 29 , wherein a portion of the titanium layer is converted to a titanium suicide.
Claim 35
Dependent Claim
17 words
The method of claim 29 , wherein the titanium layer is deposited over a metal silicide layer.
Claim 36
Independent Claim
79 words
A method of processing a substrate, comprising: forming a variable content titanium silicon nitride layer, comprising: delivering a silicon precursor, a titanium precursor, and a nitrogen precursor to the substrate at a first ratio of silicon precursor to nitrogen precursor, and delivering the silicon precursor, the titanium precursor, and the nitrogen precursor to the substrate at a second ratio of silicon precursor to nitrogen precursor; and forming a copper material layer over the variable content titanium silicon nitride layer.
Claim 37
Independent Claim
79 words
A method of processing a substrate, comprising: forming a variable content titanium silicon nitride layer, comprising: delivering a silicon precursor, a titanium precursor, and a nitrogen precursor to the substrate at a first ratio of silicon precursor to nitrogen precursor, and delivering the silicon precursor, the titanium precursor, and the nitrogen precursor to the substrate at a second ratio of silicon precursor to nitrogen precursor; and forming a copper material layer over the variable content titanium silicon nitride layer.
Claim 38
Dependent Claim
20 words
The method of claim 32 , wherein the variable content titanium silicon nitride layer is formed over a dielectric layer.
Claim 39
Dependent Claim
15 words
The method of claim 33 , wherein the dielectric layer comprises a low-k dielectric layer.
Claim 40
Dependent Claim
26 words
The method of claim 34 , wherein the dielectric layer comprises a low-k material selected from the group including oxidized organosilane film and oxidized organosiloxane film.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2007-04-13 | 2007-10-13 | 2008-04-13 | $2000.00 | Window Closed / Lapsed |
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