US5395791A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy
Assignee: 3M Co
•
Filing: 1993-10-20
•
Granted: 1995-03-07
•
Expires: 2013-10-20
Abstract
Abstract A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200 DEG C. in an MBE chamber. Sources of Cd, Zn, and Se are injected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum well layer including overlaying monolayers of Cd, Zn and Se. The quantum well layer is described by the notation [(CdSe)m(ZnSe)n]p where m, n and p are integers.
Inventors
- 👤 Hwa Cheng
- 👤 James M. DePuydt
- 👤 Michael A. Haase
- 👤 Jun Qiu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:41
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/347; B; B82; B82Y; B82Y20/00; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3228; H10P14/3231; H10P14/3232; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431; H10P14/3432; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H01S5/3403; H01S5/3406; H01S5/342; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/012; H10H20/0125
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
130 words
A method for operating a molecular beam epitaxy (MBE) system having a chamber and sources of at least one group II element and at least one group VI element to grow a quantum well active layer on a substrate and any previously grown layers during the fabrication of a II-VI compound semiconductor electroluminescent device, including: heating the substrate and previously grown layers of the II-VI semiconductor device in the MBE chamber to a temperature less than 200° C.; injecting alternately the group II and group VI elements into the MBE chamber; and growing a short-period strained-layer superlattice (SPSLS) quantum well layer in a form described by the notation [(X) m (Y) n ] p where X and Y are binary II-VI semiconductor compounds and m, n and p are integers.
Claim 2
Independent Claim
130 words
A method for operating a molecular beam epitaxy (MBE) system having a chamber and sources of at least one group II element and at least one group VI element to grow a quantum well active layer on a substrate and any previously grown layers during the fabrication of a II-VI compound semiconductor electroluminescent device, including: heating the substrate and previously grown layers of the II-VI semiconductor device in the MBE chamber to a temperature less than 200° C.; injecting alternately the group II and group VI elements into the MBE chamber; and growing a short-period strained-layer superlattice (SPSLS) quantum well layer in a form described by the notation [(X) m (Y) n ] p where X and Y are binary II-VI semiconductor compounds and m, n and p are integers.
Claim 3
Dependent Claim
71 words
The method of claim 1 wherein the MBE system includes sources of Cd, Zn and Se elements, and: injecting the elements includes injecting alternately the Cd, Zn and Se elements; and growing the quantum well layer includes growing a short-period strained-layer superlattice (SPSLS) including overlaying monolayers of Cd, Zn and Se in a form described by the notation [(CdSe) m (ZnSe) n ] p where m, n and p are integers.
Claim 4
Dependent Claim
21 words
The method of claim 2 wherein growing the SPSLS quantum well layer includes growing the layer so m=1-3, n=1-5 and p=1-5.
Claim 5
Dependent Claim
21 words
The method of claim 3 wherein growing the SPSLS quantum well layer includes growing the layer so m=1, n=2 and p=3.
Claim 6
Dependent Claim
66 words
The method of claim 1 wherein the MBE system includes sources of Zn, Te and Se elements, and: injecting the elements includes injecting alternately the Zn, Te and Se elements; and growing the SPSLS quantum well layer includes growing overlaying monolayers of Zn, Te and Se in a form described by the notation [(ZnTe) m (ZnSe) n ] p where m, n and p are integers.
Claim 7
Dependent Claim
21 words
The method of claim 5 wherein growing the SPSLS quantum well layer includes growing the layer so m=1-3, n=1-5 and p=1-5.
Claim 8
Dependent Claim
35 words
The method of claim 1 wherein heating the substrate and previously grown layers of the device includes heating the substrate and previously grown layers to a temperature less than or equal to about 190° C.
Claim 9
Dependent Claim
35 words
The method of claim 1 wherein heating the substrate and previously grown layers of the device includes heating the substrate and previously grown layers to a temperature less than or equal to about 170° C.
Claim 10
Dependent Claim
35 words
The method of claim 1 wherein heating the substrate and previously grown layers of the device includes heating the substrate and previously grown layers to a temperature less than or equal to about 150° C.
Claim 11
Dependent Claim
12 words
II-VI laser diodes manufactured in accordance with the method of claim 1.
Claim 12
Independent Claim
112 words
A method for operating a molecular beam epitaxy (MBE) system having a chamber and sources of Cd, Se and Zn to grow a quantum well active layer on a substrate and any previously grown layers during the fabrication of a II-VI compound semiconductor laser diode, including: heating the substrate and previously grown layers of the II-VI laser diode in the MBE chamber; injecting alternately the Cd, Se and Zn into the MBE chamber; and growing a short-period strained-layer superlattice (SPSLS) quantum well layer formed by overlaying monolayers of Cd, Se and Zn in a form described by the notation [CdSe) m (ZnSe) n ] p where m, n and p are integers.
Claim 13
Independent Claim
112 words
A method for operating a molecular beam epitaxy (MBE) system having a chamber and sources of Cd, Se and Zn to grow a quantum well active layer on a substrate and any previously grown layers during the fabrication of a II-VI compound semiconductor laser diode, including: heating the substrate and previously grown layers of the II-VI laser diode in the MBE chamber; injecting alternately the Cd, Se and Zn into the MBE chamber; and growing a short-period strained-layer superlattice (SPSLS) quantum well layer formed by overlaying monolayers of Cd, Se and Zn in a form described by the notation [CdSe) m (ZnSe) n ] p where m, n and p are integers.
Claim 14
Dependent Claim
21 words
The method of claim 11 wherein growing the SPSLS quantum well layer includes growing the layer so m=1-3, n=1-5, and p=1-5.
Claim 15
Dependent Claim
21 words
The method of claim 11 wherein growing the SPSLS quantum well layer includes growing the layer so m=1, n=2 and p=3.
Claim 16
Dependent Claim
39 words
The method of claim 11 wherein heating the substrate and previously grown layers of the semiconductor device includes heating the substrate and previously grown layers of the device to a temperature less than or equal to about 200° C.
Claim 17
Dependent Claim
39 words
The method of claim 11 wherein heating the substrate and previously grown layers of the semiconductor device includes heating the substrate and previously grown layers of the device to a temperature less than or equal to about 170° C.
Claim 18
Independent Claim
119 words
A method for operating a molecular beam epitaxy (MBE) system having a chamber and sources of Te, Se and Zn to grow a quantum well active layer on a substrate and any previously grown layers during the fabrication of a II-VI compound semiconductor laser diode, including: heating the substrate and previously grown layers of the II-VI laser diode in the MBE chamber to a temperature less than 200° C.; injecting alternately the Te, Se and Zn into the MBE chamber; and growing a short-period strained-layer superlattice (SPSLS) quantum well layer formed by overlaying monolayers of Te, Se and Zn in a form described by the notation [(ZnTe) m (ZnSe) n ] p where m, n and p are integers.
Claim 19
Independent Claim
119 words
A method for operating a molecular beam epitaxy (MBE) system having a chamber and sources of Te, Se and Zn to grow a quantum well active layer on a substrate and any previously grown layers during the fabrication of a II-VI compound semiconductor laser diode, including: heating the substrate and previously grown layers of the II-VI laser diode in the MBE chamber to a temperature less than 200° C.; injecting alternately the Te, Se and Zn into the MBE chamber; and growing a short-period strained-layer superlattice (SPSLS) quantum well layer formed by overlaying monolayers of Te, Se and Zn in a form described by the notation [(ZnTe) m (ZnSe) n ] p where m, n and p are integers.
Claim 20
Dependent Claim
21 words
The method of claim 16 wherein growing the SPSLS quantum well layer includes growing the layer so m=1-3, n=1-5, and p=1-5.
Claim 21
Dependent Claim
21 words
The method of claim 16 wherein growing the SPSLS quantum well layer includes growing the layer so m=1, n=2 and p=3.
Claim 22
Dependent Claim
39 words
The method of claim 16 wherein heating the substrate and previously grown layers of the semiconductor device includes heating the substrate and previously grown layers of the device to a temperature less than or equal to about 170° C.
Claim 23
Dependent Claim
39 words
The method of claim 16 wherein heating the substrate and previously grown layers of the semiconductor device includes heating the substrate and previously grown layers of the device to a temperature less than or equal to about 150° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-06 | 1998-09-05 | 1999-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-06 | 2002-09-05 | 2003-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-06 | 2006-09-05 | 2007-03-07 | $7700.00 | Window Closed / Lapsed |