EP0284031A2
Expired / Lapsed
EP
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Opto-electronic device
Assignee: Hitachi Ltd
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Filing: 1988-03-22
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Granted: —
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Expires: 2008-03-22
Abstract
Abstract An opto-electronic device has an atomic layer superlattice semiconductor comprising different semiconductor materials periodically piled up, each material having an atomic layer thickness. The superlattice semiconductor has a bandgap different from an alloy semiconductor having equivalently the same composition as the former. In a semiconductor laser, as clad layers (33, 35; 43, 45), the atomic layer superlattice semiconductor having equivalently the same composition as a Zn 0.42 Cd 0.58 S alloy semiconductor and a larger bandgap than the later is used, and a ZnSe 0.94 S 0.06 alloy semiconductor as an active layer (34, 44) is located between the cladding layers. The double-hetero structure semiconductor laser thus provided can perform the lasing at 470 nm at room temperature.
Inventors
- 👤 Masahiko Kondow
- 👤 Shigekazu Minagawa
- 👤 Takashi Kajimura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 17:17
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/34; H01S5/347; H01S2302/00; H01S5/20; H01S5/2004; H01S5/22; H01S5/2205; H01S5/2214; H01S5/3206; H01S5/3207; H01S5/3211; H01S5/3216; H01S5/323; H01S5/32308; H01S5/32325; H01S5/327; H01S5/342; H01S5/3428; H01S5/343; H01S5/34313; H01S5/3432
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
29 words
An opto-electronic device having a superlattice semiconductor (33, 43, 35, 45) comprising different semiconductor material layers periodically piled up, each layer having a thickness of 1 to 10 monolayers.
Claim 2
Dependent Claim
29 words
An opto-electronic device having a superlattice semiconductor (33, 43, 35, 45) comprising different semiconductor material layers periodically piled up, each layer having a thickness of 1 to 10 monolayers.
Claim 3
Dependent Claim
44 words
An opto-electronic device having a superlattice semiconductor comprising different semiconductor material layers periodically piled up, each layer having a thickness of 1 to 10 monolayers, said superlattice semiconductor having a bandgap different from an alloy semiconductor having equivalently the same composition as the former.
Claim 4
Dependent Claim
44 words
An opto-electronic device having a superlattice semiconductor comprising different semiconductor material layers periodically piled up, each layer having a thickness of 1 to 10 monolayers, said superlattice semiconductor having a bandgap different from an alloy semiconductor having equivalently the same composition as the former.
Claim 5
Dependent Claim
27 words
An opto-electronic device according to Claim 2, wherein said superlattice semiconductor having a bandgap larger than the alloy semiconductor having equivalently the same composition as the former.
Claim 6
Dependent Claim
22 words
An opto-electronic device according to Claim 2, wherein said superlattice semiconductor is constituted by piling up layers of different II-VI binary semiconductors.
Claim 7
Dependent Claim
27 words
An opto-electronic device according to Claim 2, wherein said superlattice semiconductor is one selected from the group consisting of a ZnCdS system, ZnTeSe system and AlGaInP system.
Claim 8
Dependent Claim
25 words
An opto-electronic device according to Claim 2, wherein said opto-electronic device is a double-hetero structure semiconductor laser, and said superlattice semiconductor is a clad layer.
Claim 9
Dependent Claim
183 words
An opto-electronic device according to Claim 6, wherein said double-hetero structure semiconductor laser comprises a first conduction type GaAs substrate (31, 41), a first conduction type GaAs buffer layer (32, 42) formed on said GaAs substrate, a first clad layer (33, 43) of said superlattice semiconductor of a first conduction type which is formed on said GaAs buffer layer, an (Al x Ga 1-x ) 0.5 In 0.5 P (0 ≦ x ≦ 0.7) active layer (34, 44) formed on said first clad layer and having a smaller bandgap and a larger refractive index than said first clad layer, a second clad layer (35, 45) of said superlattice semiconductor of a second conduction type opposite to said first conduction type, having a larger bandgap and a smaller refractive index than said active layer, which is formed on said active layter, and electrodes (48, 49) electrically connected with said layers of the first conduction type and the second conduction type, and the superlattice semiconductor of said first and second clad layers is formed by alternately piling up two InP monolayers and two AlP monolayers.
Claim 10
Dependent Claim
47 words
An opto-electronic device according to Claim 1 or 2, wherein said opto-electronic device is a double-hetero structure semiconductor laser, said superlattice semiconductor is an active layer and the bandgap of the superlattice semiconductor is smaller than the alloy semiconductor having equivalently the same composition as the former.
Claim 11
Dependent Claim
141 words
An opto-electronic device according to Claim 8, wherein said double-hetero structure semiconductor laser comprises a first conduction type GaAs substrate (31, 41), a first clad layer (33, 43) of a first conduction type ZnSe formed on said GaAs substrate, an active layer of said superlattice semiconductor having a smaller bandgap and a refractive index than said first clad layer, which is formed on said first clad layer, a second clad layer (35, 45) of a second conduction type ZnSe formed on said active layer, having a larger bandgap and a smaller refractive index than said active layer, and electrodes electrically connected with said clad layers of the first conduction type and the second conduction type, and the superlattice semiconductor of said active layer has one period consisting of (InP), (GaP), (InP), (AlP), (InP), and (AlP) each of which corresponds a monolayer.
References Cited (Backward Citations)
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