Quaternary II-VI materials for photonics

Claim 2

A photonic device including a region comprised of a quaternary Group II-VI alloy containing Hg as one atomic constituent and a substrate supporting the region, the substrate having a characteristic lattice constant, and wherein the quaternary Group II-VI alloy has a composition selected for substantially lattice matching the region to the substrate and also for providing the region with an energy bandgap associated with a wavelength of interest.

Claim 3

A photonic device as set forth in claim 1 wherein the quaternary Group II-VI alloy is comprised of Hg.sub.(1-x) Zn x S.sub.(1-y) Se y where x and y each have a value greater than zero and less than one.

Claim 4

A photonic device as set forth in claim 1 wherein the quaternary Group II-VI alloy is comprised of Hg.sub.(1-x) Zn x Se.sub.(1-y) Te y where x and y each have a value greater than zero and less than one.

Claim 5

A photonic device as set forth in claim 1 wherein the quaternary Group II-VI alloy is comprised of Hg.sub.(1-x) A x B.sub.(1-y) C y where A is Zn or Cd, B is S, Se or Te and C is S, Se or Te and x and y each have a value greater than zero and less than one.

Claim 6

A photonic device as set forth in claim 1 wherein the quaternary Group II-VI alloy is comprised of Hg.sub.(1-x-y) Cd x Zn y C where C is S, Se or Te and x and y each have a value greater than zero and less than one.

Claim 7

A photonic device as set forth in claim 1 wherein the quaternary Group II-VI alloy is comprised of Hg.sub.(1-x-y) Cd x Zn y S where x and y each have a value greater than zero and less than one.

Claim 8

A photonic device as set forth in claim 1 wherein the substrate is comprised of material selected from the group consisting of GaAs and ZnSe.

Claim 9

A photonic device as set forth in claim 1 wherein the substrate is comprised of material selected from the group consisting of ZnTe, GaAs, and GaSb and combinations thereof.

Claim 10

A photonic device as set forth in claim 1 wherein the region is comprised of a substantially homogeneous epitaxial layer.

Claim 11

A photonic device as set forth in claim 1 wherein the region is comprised of a plurality of epitaxial layers arranged as a multilayered structure.

Claim 12

A photonic device as set forth in claim 10 wherein the multilayered structure is comprised of a first plurality of layers selected from the group comprising (i) Hg.sub.(1-x) A×B.sub.(1-y) C y where A is Zn or Cd, B is S, Se or Te and C is S, Se or Te and x and y each have a value greater than zero and less than one and (ii) Hg.sub.(1-x-y) Cd x Zn y C where C is S, Se or Te and x and y each have a value greater than zero and less than one, individual ones of which alternate with individual ones of a second plurality of layers selected from the group comprising (i) Hg.sub.(1-x') A x' B.sub.(1-y') C y , where A is Zn or Cd, B is S, Se or Te and C is S, Se or Te and x' and y' each have a value greater than zero and less than one and (ii) Hg.sub.(1-x'-y') Cd x' Zn y' C where C is S, Se or Te and x' and y' each have a value greater than zero and less than one, with x, y and x', y' selected so that the lattice parameters of the individual layers are all equal, but the energy gaps are different.

Claim 13

A photonic device as set forth in claim 1 wherein the wavelength of interest lies within the visible spectrum.

Claim 14

A double heterojunction injection laser comprising: a substrate; a first cladding layer overlying the substrate, the first cladding layer being comprised of a binary or a ternary Group II-VI material having a first type of electrical conductivity; an active region overlying the first cladding layer, the active region being comprised of a quaternary Group II-VI alloy containing Hg as one atomic constituent; and a second cladding layer overlying the active region, the second cladding layer being comprised of a binary or a ternary Group II-VI material having a second type of electrical conductivity.

Claim 15

A double heterojunction injection laser comprising: a substrate; a first cladding layer overlying the substrate, the first cladding layer being comprised of a binary or a ternary Group II-VI material having a first type of electrical conductivity; an active region overlying the first cladding layer, the active region being comprised of a quaternary Group II-VI alloy containing Hg as one atomic constituent; and a second cladding layer overlying the active region, the second cladding layer being comprised of a binary or a ternary Group II-VI material having a second type of electrical conductivity.

Claim 16

A double heterojunction injection laser as set forth in claim 13 wherein the substrate has a characteristic lattice constant and wherein the quaternary Group II-VI alloy is comprised of Hg.sub.(1-x) Zn x S.sub.(1-y) Se y where x and y each have a value greater than zero and less than one for substantially lattice matching the active region to the substrate and also for determining the energy bandgap of the quaternary Group II-VI alloy such that the alloy emits electromagnetic radiation having a characteristic wavelength within the range of wavelengths associated with red light to violet light.

Claim 17

A double heterojunction injection laser as set forth in claim 13 wherein the active region is comprised of a substantially homogeneous epitaxial layer.

Claim 18

A double heterojunction injection laser set forth in claim 13 wherein the active region is comprised of a first plurality of layers selected from the group comprising (i) Hg.sub.(1-x) A x B.sub.(1-y) C y where A is Zn or Cd, B is S, Se or Te and C is S, Se or Te and x and y each have a value greater than zero and less than one and (ii) Hg.sub.(1-x-y) Cd x Zn y C where C is S, Se or Te and x and y each have a value greater than zero and less than one, individual ones of which alternate with individual ones of a second plurality of layers selected from the group comprising (i) Hg.sub.(1-x') A x' B.sub.(1-y') C y' where A is Zn or Cd, B is S, Se or Te and C is S, Se or Te and x' and y' each have a value greater than zero and less than one and (ii) Hg.sub.(1-x'-y') Cd x' Zn y' C where C is S, Se or Te and x' and y' each have a value greater than zero and less than one, with x, y and x', y' selected so that the lattice parameters of the individual layers are all equal, but the energy gaps are different.