US5300186A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
Assignee: Fujitsu Ltd
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Filing: 1992-04-07
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Granted: 1994-04-05
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Expires: 2012-04-07
Abstract
Abstract A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Inventors
- 👤 Kuninori Kitahara
- 👤 Nobuyuki Ohtsuka
- 👤 Masashi Ozeki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3218; H10P14/3221; Y; Y10; Y10S; Y10S438/00; Y10S438/933; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12674
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
70 words
A method of growing a gallium arsenide single crystal layer on a silicon substrate, comprising the steps of: growing a buffer layer of aluminum arsenide on the silicon substrate by atomic layer epitaxy using metal organic chemical vapor deposition wherein pyrolysis of a first source gas for aluminum and a source gas for arsenic are alternately pyrolyzed; and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Claim 2
Independent Claim
70 words
A method of growing a gallium arsenide single crystal layer on a silicon substrate, comprising the steps of: growing a buffer layer of aluminum arsenide on the silicon substrate by atomic layer epitaxy using metal organic chemical vapor deposition wherein pyrolysis of a first source gas for aluminum and a source gas for arsenic are alternately pyrolyzed; and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Claim 3
Independent Claim
64 words
A method of growing a gallium arsenide single crystal layer on a silicon substrate, comprising the steps of: growing a buffer layer of aluminum arsenide on the silicon substrate by atomic layer epitaxy using molecular beam epitaxy wherein ionic beams of aluminum and arsenic are alternately irradiated on the silicon substrate; and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Claim 4
Independent Claim
64 words
A method of growing a gallium arsenide single crystal layer on a silicon substrate, comprising the steps of: growing a buffer layer of aluminum arsenide on the silicon substrate by atomic layer epitaxy using molecular beam epitaxy wherein ionic beams of aluminum and arsenic are alternately irradiated on the silicon substrate; and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Claim 5
Independent Claim
46 words
A method of growing a gallium arsenide single crystal layer on a silicon substrate comprising the steps of: growing a buffer layer of aluminum nitride or aluminum phosphide on the silicon substrate epitaxially; and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Claim 6
Independent Claim
46 words
A method of growing a gallium arsenide single crystal layer on a silicon substrate comprising the steps of: growing a buffer layer of aluminum nitride or aluminum phosphide on the silicon substrate epitaxially; and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Claim 7
Dependent Claim
14 words
A method according to claim 3, wherein the buffer layer is of aluminum nitride.
Claim 8
Dependent Claim
14 words
A method according to claim 3, wherein the buffer layer is of aluminum phosphide.
Claim 9
Independent Claim
43 words
A method of growing an indium phosphide single crystal layer on a silicon substrate comprising the steps of: growing a buffer layer of gallium nitride on the silicon substrate epitaxially; and growing the indium phosphide single crystal layer on the buffer layer epitaxially.
Claim 10
Independent Claim
43 words
A method of growing an indium phosphide single crystal layer on a silicon substrate comprising the steps of: growing a buffer layer of gallium nitride on the silicon substrate epitaxially; and growing the indium phosphide single crystal layer on the buffer layer epitaxially.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |