US4840921A
Expired / Lapsed
US
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Process for the growth of III-V group compound semiconductor crystal on a Si substrate
Assignee: NEC Corp
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Filing: 1988-06-30
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Granted: 1989-06-20
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Expires: 2008-06-30
Abstract
Abstract In a process for the growth of III-V group compound semiconductor crystal on a Si substrate, chloride gas of an element selected from In and Ga of III group elements and hydride gas of an element selected from V group elements are alternately supplied into a growing chamber to grow III-V group compound semiconductor crystal on a Si substrate. As a result, the crystal is of a good selective growth property and of a good crystal property.
Inventors
- 👤 Takashi Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:33
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; Y; Y10; Y10S; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
89 words
A process for the growth of III-V group compound semiconductor crystal on a Si substrate comprising, placing a Si substrate on a mount positioned in a growing chamber, heating said Si substrate at a predetermined temperature, supplying first gas seed including one selected from In and Ga of III group elements, and second gas seed including one of V group elements alternately into said growing chamber, and growing III-V group compound semiconductor crystal on said Si substrate, wherein said one selected from In and Ga is a chloride thereof.
Claim 2
Dependent Claim
89 words
A process for the growth of III-V group compound semiconductor crystal on a Si substrate comprising, placing a Si substrate on a mount positioned in a growing chamber, heating said Si substrate at a predetermined temperature, supplying first gas seed including one selected from In and Ga of III group elements, and second gas seed including one of V group elements alternately into said growing chamber, and growing III-V group compound semiconductor crystal on said Si substrate, wherein said one selected from In and Ga is a chloride thereof.
Claim 3
Dependent Claim
47 words
A process for the growth of III-V group compound semiconductor crystal on a Si substrate according to claim 1, wherein said Si substrate is masked partially with SiO 2 film, and said III-V group compound semiconductor crystal is grown only on non-masked portion of said Si substrate.
Claim 4
Dependent Claim
28 words
A process for the growth of III-V group compound semiconductor crystal on a Si substrate according to claim 1, wherein said second gas seed is PH 3 .
Claim 5
Dependent Claim
35 words
A process for the growth of III-V group compound semiconductor crystal on a Si substrate according to claim 3, wherein said chloride is supplied into said growing chamber before said PH 3 is supplied thereinto.
Claim 6
Dependent Claim
35 words
A process for the growth of III-V group compound semiconductor crystal on a Si substrate according to claim 1, wherein said chloride is supplied into said growing chamber before said second gas seed is supplied.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-19 | 1992-12-19 | 1993-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-19 | 1996-12-19 | 1997-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-19 | 2000-12-19 | 2001-06-20 | $7700.00 | Window Closed / Lapsed |