Process for depositing a III-V compound layer on a substrate

Claim 2

A process comprising applying to a substrate a precursor of a III-V compound, the precursor consisting of one or more pairs of ligand substituted group III and group V elements and thermally decomposing the precursor, characterized in that the precursor is selected from among compounds in which the group III and V elements of each pair are joined by a thermally stable bond and the group III and V elements are each substituted with two thermally volatilizable ligands, a film comprised of the precursor and a liquid carrier, which is a solvent for the precursor and which can be entirely volatilized, is applied to the substrate and spread to form a uniform coating by rotating the substrate, and the liquid carrier and ligands are removed from the film, this step including heating the film to a temperature in excess of 200° C. to remove the volatilizable ligands while leaving a ligand free III-V compound as a monophasic layer on the substrate.

Claim 3

A process according to claim 1 further characterized in that the Group III elements are chosen from the group consisting of boron, aluminum, gallium and indium.

Claim 4

A process according to claim 1 further characterized in that the Group V elements are chosen from the group consisting of nitrogen, phosphorus, arsenic, and antimony.

Claim 5

A process according to claim 1 further characterized in that the ligands are chosen from the class consisting of hydrogen, halogen, hydrocarbons, and substituted hydrocarbons.

Claim 6

A process according to claim 1 further characterized in that the film is heated to a temperature in the range of from 200° to 650° C.

Claim 7

A process according to claim 1 further characterized in tht the precursor satisfies the formula ##STR4## where M(III) is a group III element; M'(V) is a group V element; R 1 , R 2 , R 3 , and R 4 are independently chosen volatilizable ligands; and n is an integer of from 1 to 5.

Claim 8

A process according to claim 6 further characterized in that the film is heated to a temperature in the range of from 250° to 450° C.

Claim 9

A process according to claim 6 further characterized in that the substrate is a glass or monocrystalline substrate.

Claim 10

A process comprising applying to a substrate a precursor of a III-V compound, the precursor consisting of one or more pairs of ligand substituted group III and group V elements and thermally decomposing the precursor, characterized in that a film comprised of the precursor and a liquid carrier, which is a solvent for the precursor and which can be entirely volatilized, is applied to the substrate and then spread to form a uniform coating, the liquid carrier and ligands are removed from the film, this step including heating the film to a temperture in excess of 200° C. to remove the volatilizable ligands while leaving a ligand free III-V compound as a monophasic layer on the substrate, and the precursor satisfies the formula: ##STR5## where M(III) is a group III element chosen from the class consisting of gallium, aluminu, or indium; M'(V) is a group V element chosen from the class consisting of nitrogen, phosphorus, or arsenic; and R and R' are independently hydrogen, halogen, or a hydrocarbon of from 1 to 10 carbon atoms.

Claim 11

A process comprising applying to a substrate a precursor of a III-V compound, the precursor consisting of one or more pairs of ligand substituted group III and group V elements and thermally decomposing the precursor, characterized in that a film comprised of the precursor and a liquid carrier, which is a solvent for the precursor and which can be entirely volatilized, is applied to the substrate and then spread to form a uniform coating, the liquid carrier and ligands are removed from the film, this step including heating the film to a temperture in excess of 200° C. to remove the volatilizable ligands while leaving a ligand free III-V compound as a monophasic layer on the substrate, and the precursor satisfies the formula: ##STR5## where M(III) is a group III element chosen from the class consisting of gallium, aluminu, or indium; M'(V) is a group V element chosen from the class consisting of nitrogen, phosphorus, or arsenic; and R and R' are independently hydrogen, halogen, or a hydrocarbon of from 1 to 10 carbon atoms.

Claim 12

A process according to claim 9 further characterized in that the precursor is chosen from the class consisting of ##STR6##