US4594264A
Expired / Lapsed
US
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Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes
Assignee: The AT&T MVPD Group LLC
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Filing: 1984-11-20
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Granted: 1986-06-10
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Expires: 2004-11-20
Abstract
Abstract A method for depositing GaAs on a substrate is disclosed, involving applying a thin liquid film of a gallium-arsenic complex solution to the substrate and evaporating arsenide complex. The gallium-arsenic complex is selected from the group of complexes having the formula X 3 GaAsR 3 where X is chlorine, bromine, iodine, phenyl, methyl or trifluoromethyl and R is by hydrogen, phenyl, benzyl, methyl or trifluoromethyl. The thin solid film is irradiated with ultraviolet light at a sufficient wavelength and of a sufficient intensity to photochemically convert the gallium-arsenic complex to GaAs.
Inventors
- 👤 John E. Jensen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:15
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
133 words
A method for depositing GaAs on a substrate comprising the steps of: applying to said substrate a thin liquid film of a gallium-arsenic complex solution, said solution selected from the group of complexes having the formula X 3 GaAsR 3 where X is chlorine, bromine, iodine, phenyl, methyl, or trifluoromethyl and R is hydrogen, phenyl, benzyl, methyl or trifluoromethyl, and a compatible solvent in which said complex is dissolved; evaporating said solvent from said liquid film to form a thin solid film of said gallium-arsenic complex on said substrate; and irradiating said thin solid film in an atmosphere free of oxygen and moisture with ultraviolet light of a sufficient wavelength and a sufficient intensity to photochemical convert said gallium-arsenic complex to gallium arsenide to thereby provide deposition of gallium arsenide on said substrate.
Claim 2
Independent Claim
133 words
A method for depositing GaAs on a substrate comprising the steps of: applying to said substrate a thin liquid film of a gallium-arsenic complex solution, said solution selected from the group of complexes having the formula X 3 GaAsR 3 where X is chlorine, bromine, iodine, phenyl, methyl, or trifluoromethyl and R is hydrogen, phenyl, benzyl, methyl or trifluoromethyl, and a compatible solvent in which said complex is dissolved; evaporating said solvent from said liquid film to form a thin solid film of said gallium-arsenic complex on said substrate; and irradiating said thin solid film in an atmosphere free of oxygen and moisture with ultraviolet light of a sufficient wavelength and a sufficient intensity to photochemical convert said gallium-arsenic complex to gallium arsenide to thereby provide deposition of gallium arsenide on said substrate.
Claim 3
Dependent Claim
10 words
The method according to claim 1 where X is chlorine.
Claim 4
Dependent Claim
10 words
The method according to claim 2 where R is phenyl.
Claim 5
Dependent Claim
10 words
The method according to claim 1 where X is iodine.
Claim 6
Dependent Claim
10 words
The method according to claim 1 where X is bromine.
Claim 7
Dependent Claim
10 words
The method according to claim 4 where R is phenyl.
Claim 8
Dependent Claim
10 words
The method according to claim 1 where X is phenyl.
Claim 9
Dependent Claim
10 words
The method according to claim 7 where R is methyl.
Claim 10
Dependent Claim
10 words
The method according to claim 1 where X is methyl.
Claim 11
Dependent Claim
10 words
The method according to claim 9 where R is methyl.
Claim 12
Dependent Claim
10 words
The method according to claim 1 where X is trifluromethyl.
Claim 13
Dependent Claim
10 words
The method according to claim 11 where R is trifluoromethyl.
Claim 14
Dependent Claim
10 words
The method according to claim 11 where R is methyl.
Claim 15
Dependent Claim
10 words
The method according to claim 11 where R is hydrogen.
Claim 16
Dependent Claim
10 words
The method according to claim 1 where R is phenyl.
Claim 17
Dependent Claim
10 words
The method according to claim 1 where R is benzyl.
Claim 18
Dependent Claim
10 words
The method according to claim 1 where R is methyl.
Claim 19
Dependent Claim
10 words
The method according to claim 1 where R is trifluoromethyl.
Claim 20
Dependent Claim
21 words
The method according to claim 1 wherein said solvent is a hydrocarbon solvent which does not contain nitrogen, oxygen, or sulfur.
Claim 21
Dependent Claim
13 words
The method according to claim 17 wherein said solvent is chloroform or toluene.
Claim 22
Dependent Claim
20 words
The method according to claim 1 wherein the wavelength of said ultraviolet light is between about 190 to 260 nm.
Claim 23
Dependent Claim
22 words
The method according to claim 1 wherein said substrate is Si, Ge, GaAs, SiO 2 , or Al 2 O 3 .
Claim 24
Dependent Claim
30 words
The method according to claim 1 wherein said steps of applying said thin film and evaporating said solvent are conducted in an atmosphere which is free of oxygen and moisture.
Claim 25
Dependent Claim
15 words
The method according to claim 1 wherein said ultraviolet light is provided by a laser.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-06-09 | 1989-12-09 | 1990-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-09 | 1993-12-09 | 1994-06-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-09 | 1997-12-09 | 1998-06-10 | $7700.00 | Window Closed / Lapsed |