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US4509997A Expired / Lapsed US ⏱️ 0.0 years remaining

Organometallic chemical vapor deposition of films utilizing organic heterocyclic compounds

Assignee: UK Secretary of State for Defence
•
Filing: 1983-10-18
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Granted: 1985-04-09
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Expires: 2003-10-18
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Abstract

Abstract There is provided a method of producing inorganic thin films by metal inorganic chemical vapor deposition. The method comprises forming a vapor stream comprising a vapor mixture of an organometallic compound and a heterocyclic organic compound incorporating a group V or group VI element, and thermally decomposing the mixture on a heated substrate to form an inorganic layer. The heterocyclic compound may be an aliphatic or aromatic ring compound. The mixture may include vapors appropriate for deposition of ternary or higher order compounds, and/or for introducing dopants.

Inventors

  • 👤 Brian Cockayne
  • 👤 Richard J. M. Griffiths
  • 👤 Peter J. Wright

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 04:46
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/305; C23C16/306; C23C16/301; C23C16/40; C23C16/407

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 107 words
In a method of inorganic thin film production including the steps of (1) forming a vapor stream consisting at least partly of a mixture of the vapors of an organometallic compound and an organic compound incorporating a group V or group VI element, and (2) passing the vapor mixture over a heated substrate for reaction and decomposition of the organometallic and organic compounds to deposit an inorganic thin film having metal and group V or group VI element constituents, the improvement comprising using a heterocyclic organic compound incorporating the group V or VI element as a ring member, whereby undesired reaction between vapor stream constituents is inhibited.
Claim 2
Dependent Claim 107 words
In a method of inorganic thin film production including the steps of (1) forming a vapor stream consisting at least partly of a mixture of the vapors of an organometallic compound and an organic compound incorporating a group V or group VI element, and (2) passing the vapor mixture over a heated substrate for reaction and decomposition of the organometallic and organic compounds to deposit an inorganic thin film having metal and group V or group VI element constituents, the improvement comprising using a heterocyclic organic compound incorporating the group V or VI element as a ring member, whereby undesired reaction between vapor stream constituents is inhibited.
Claim 3
Dependent Claim 18 words
A method according to claim 1 wherein the organometallic compound incorporates a group II or group III element.
Claim 4
Dependent Claim 18 words
A method according to claim 1 wherein the vapour stream includes a mixture of at least three vapours.
Claim 5
Dependent Claim 26 words
A method according to claim 2 or 3 wherein the mixture includes a vapour appropriate to provide a film dopant when co-deposited with other film constituents.
Claim 6
Dependent Claim 16 words
A method according to claim 2 wherein the heterocyclic organic compound is an aliphatic ring compound.
Claim 7
Dependent Claim 33 words
A method according to claim 5 wherein the aliphatic ring compound is selected from the group consisting of cyclic arsines, cyclic stibines, cyclic amines, cyclic ethers, cyclic thioethers, cyclic selenoethers and cyclic telluroethers.
Claim 8
Dependent Claim 16 words
A method according to claim 2 wherein the heterocyclic organic compound is an aromatic ring compound.
Claim 9
Dependent Claim 27 words
A method according to claim 7 wherein the aromatic ring compound is selected from the group consisting of arsoles, phospholes, stiboles, pyrroles, furans, thiophenes, selenophenes and tellurophenes.

References Cited (Backward Citations)

US3492175A Cited
US3462323A Cited
US4368098A Cited
US3922475A Cited
US4066481A Cited
US4214926A Cited
GB1600283A Cited
US4250205A Cited
US4247359A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-04-08 1988-10-08 1989-04-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-04-08 1992-10-08 1993-04-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-04-08 1996-10-08 1997-04-09 $7700.00 Window Closed / Lapsed

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