EP0207216A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device of the SOI-type
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1986-02-25
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Granted: —
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Expires: 2006-02-25
Abstract
Abstract In a laminated semiconductor device comprising a substrate (1), an insulating layer (2,3,4,5) formed on the substrate and at least one active layer (6) formed on the insulating layer, the insulating layer contains an AfN layer (3) as an interlayer insulating film.
Inventors
- 👤 Ogura C/O Nec Corporation Atsushi
- 👤 Egami C/O Nec Corporation Koji
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 05:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10P14/3818; H10P14/382; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/65; H10P14/6502; H10P14/6506; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
46 words
A semiconductor device of the type wherein an insulating layer (2,3,4,5) is formed on a substrate (1) and at least one active layer (6) is formed on the insulating layer, characterized in that said insulating layer contains an AℓN layer (3) as an interlaid insulating film.
Claim 2
Dependent Claim
46 words
A semiconductor device of the type wherein an insulating layer (2,3,4,5) is formed on a substrate (1) and at least one active layer (6) is formed on the insulating layer, characterized in that said insulating layer contains an AℓN layer (3) as an interlaid insulating film.
Claim 3
Dependent Claim
27 words
The semiconductor device according to claim 1 wherein said substrate (1) is made of a material selected from the group consisting of silicon, sapphire, ceramic and glass.
Claim 4
Dependent Claim
31 words
The semiconductor device according to claim lor 2 said insulating layer further contains a barrier layer (2, 4) for preventing diffusion of aluminium atoms in said AℓN layer into adjacent layer.
Claim 5
Dependent Claim
24 words
The semiconductor device according to claim 3 wherein said barrier layer (2, 4) is made of silicon nitride (S i 3 N 4 ).
Claim 6
Dependent Claim
45 words
A semiconductor device according to claim 3 or 4 wherein said insulating layer comprises one barrier layer (2) formed on said substrate (1), the AℓN layer (3), the other barrier layer (4), and a silicon oxide (5) layer which are laminated in the order mentioned.
References Cited (Backward Citations)
No citation records indexed.
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