US4835116A
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Annealing method for III-V deposition
Assignee: Kopin Corp
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Filing: 1987-11-13
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Granted: 1989-05-30
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Expires: 2007-11-13
Abstract
Abstract A method for producing wafers having deposited layers of III-V materials on Si or Ge/Si substrates is disclosed. The method involves the use of multiple in situ and ex situ annealing steps and the formation of a thermal strain layer to produce wafers having a decreased incidence of defects and a balanced thermal strain. The wafers produced thereby are also disclosed.
Inventors
- 👤 Jhang W. Lee
- 👤 Richard E. McCullough
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/24; H10P14/29; H10P14/2901; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3438; H10P14/3441; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/048; Y10S148/065; Y10S148/094; Y10S148/097; Y10S148/11; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
112 words
A method for providing an article having III-V material layers which comprises: a. providing a substrate upon which III-V material layers are to be deposited; b. forming a III-V nucleation layer upon the substrate via organometallic chemical vapor deposition in a growth chamber; c. forming a first III-V film upon the nucleation layer in the growth chamber; d. annealing the first III-V film; e. forming a second III-V film upon the first III-V film; f. continuing the deposition of the second III-V film while simultaneously, repeatedly cycling the temperature between about 300° and 750° C.; and g. forming a third III-V film upon the second III-V film to form a layered substrate.
Claim 2
Independent Claim
112 words
A method for providing an article having III-V material layers which comprises: a. providing a substrate upon which III-V material layers are to be deposited; b. forming a III-V nucleation layer upon the substrate via organometallic chemical vapor deposition in a growth chamber; c. forming a first III-V film upon the nucleation layer in the growth chamber; d. annealing the first III-V film; e. forming a second III-V film upon the first III-V film; f. continuing the deposition of the second III-V film while simultaneously, repeatedly cycling the temperature between about 300° and 750° C.; and g. forming a third III-V film upon the second III-V film to form a layered substrate.
Claim 3
Dependent Claim
23 words
A method as in claim 1 wherein the substrate is selected from the group consisting of Si, Ge/Si or other single crystal substrates.
Claim 4
Dependent Claim
40 words
A method as in claim 1 wherein the III-V nucleation layer comprises a combination of a material selected from the group consisting of Ga, In and Al and a material selected from the group consisting of As, Sb and P.
Claim 5
Dependent Claim
27 words
A method as in claim 3 wherein the III-V nucleation layer comprises a material selected from the group consisting of GaAs, AlGaAs, InGaAs, InP, InGaAsP and InSb.
Claim 6
Dependent Claim
40 words
A method as in claim 1 wherein the first III-V film comprises a combination of a material selected from the group consisting of Ga, In and Al and a material selected from the group consisting of As, Sb and P.
Claim 7
Dependent Claim
23 words
A method as in claim 5 wherein the first III-V film comprises a material selected from the group consisting of GaAs and InP.
Claim 8
Dependent Claim
39 words
A method as in claim 1 wherein the second III-V film comprises a combination of a material selected from the group consisting of Ga, In and Al and a material selected from the group consisting of As and P.
Claim 9
Dependent Claim
22 words
A method as in claim 7 wherein the III-V film comprises a material selected from the group consisting of GaAs and InP.
Claim 10
Dependent Claim
40 words
A method as in claim 1 wherein the third III-V film comprises a combination of a material selected from the group consisting of Ga, In and Al and a material selected from the group consisting of As, Sb and P.
Claim 11
Dependent Claim
23 words
A method as in claim 9 wherein the third III-V film comprises a material selected from the group consisting of GaAs and InP.
Claim 12
Dependent Claim
24 words
A method as in claim 1 wherein the III-V nucleation layer is formed to a thickness of between about 10 and about 20 nm.
Claim 13
Dependent Claim
24 words
A method as in claim 1 wherin the III-V nucleation layer is formed at a temperature of between about 300° and about 450° C.
Claim 14
Dependent Claim
24 words
A method as in claim 1 wherein the first III-V layer is formed to a thickness of between about 50 and about 200 nm.
Claim 15
Dependent Claim
23 words
A method of claim 1 wherein the first III-V layer is formed at a temperature of between about 600° and about 700° C.
Claim 16
Dependent Claim
14 words
A method as in claim 1 wherein the first III-V layer contains a dopant.
Claim 17
Dependent Claim
20 words
A method as in claim 15 wherein the dopant is selected from the group consisting of Zn, S and Si.
Claim 18
Dependent Claim
23 words
A method as in claim 15 wherein the first III-V layer is formed to a thickness of between about 20 and 200 nm.
Claim 19
Dependent Claim
24 words
A method as in claim 15 wherein the first III-V layer is formed at a temperature of between about 600° and about 700° C.
Claim 20
Dependent Claim
33 words
A method as in claim 1 wherein the first III-V layer is annealed in-situ at a temperature of between about 800° and about 850° C. for between about 5 and about 10 minutes.
Claim 21
Dependent Claim
33 words
A method as in claim 15 wherein the first III-V layer is annealed in-situ at a temperature of between about 750° and about 850° C. for between about 5 and about 10 minutes.
Claim 22
Dependent Claim
34 words
A method as in claim 1 wherein the first III-V layer is annealed ex-situ at a temperature of between about 750° and about 950° C. for between about 5 seconds and about 15 minutes.
Claim 23
Dependent Claim
24 words
A method as in claim 1 wherein the second III-V layer is formed to a thickness of between about 500 and about 1500 nm.
Claim 24
Dependent Claim
23 words
A method as in claim 1 wherein the second III-V layer is formed at a temperature between about 600° and about 700° C.
Claim 25
Dependent Claim
26 words
A method as in claim 1 wherein the temperature cycling during the continued deposition of the second III-V layer is repeated between 1 and 5 times.
Claim 26
Dependent Claim
22 words
A method as in claim 24 wherein during each cycle, between about 5 and about 50 nm of III-V material is deposited.
Claim 27
Dependent Claim
27 words
A method as in claim 1 wherein the third III-V layer is formed at a temperature between about 600° and about 700° C. to a desired thickness.
Claim 28
Dependent Claim
32 words
A method as in claim 1 wherein the layered substrate is annealed at a temperature of between about 750° and about 950° C. for between about 5 seconds and about 15 minutes.
Claim 29
Dependent Claim
24 words
A method as in claim 1 wherein the forming of a second III-V film occurs concurrently with the annealing of the first III-V film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |