Group VI doping of III-V semiconductors during ALE

Claim 2

Method of producing n-type III-V compound semiconductor comprising: a first step of growing a plurality of monolayers of III-V compound semiconductor molecules on a III-V compound substrate; a second step of growing a single layer of group VI element on said III-V monolayers so as to occupy lattice points for group V element by means of Atomic Layer Epitaxy process; a third step of decreasing the number of said group VI element by exposing said single layer to the gas of group V element; and a fourth step of growing a plurality of monolayers of III-V compound semiconductor molecules on the group VI element-doped layer by means of said Atomic Layer Epitaxy process.

Claim 3

Method according to claim 1, wherein said III-V compound semiconductor is selected from the group comprising GaAs, InP, Gap and InAs, while said group VI element is selected from the group comprising Se and S.

Claim 4

Growing method of Se-doped n-type GaAs crystal comprising: a first step of adsorbing a monolayer of GaCl molecule onto GaAs substrate by exposing thereof to GaCl gas. a second step of exposing said substrate to AsH 3 gas to grow As monolayer onto Ga monolayer by desorbing Cl from a GaCl molecule as HCl gas; a third step of repeating said first step and second step consequently to grow a desired number of monolayers of GaAs molecule; a fourth step of adsorbing a monolayer of GaCl molecule onto said monolayers of GaAs molecule; a fifth step of exposing said substrate after said fourth step to H 2 Se gas to grow Se monolayer onto Ga monolayer by desorption Cl from said GaCl molecule as HCl gas; a sixth step of exposing said substrate after said fifth step to AsH 3 gas to replace part of said Se by As in said Se monolayer; a seventh step of growing GaCl monolayer onto said Se monolayer by exposing said substrate after said sixth step to GaCl gas; an eighth step of exposing said substrate after said seventh step to AsH 3 gas to grow As monolayer onto Ga monolayer; a ninth step of exposing said substrate after said eighth step to GaCl gas to grow Ga monolayer onto As monolayer; and a tenth step of repeating said seventh step and eighth step alternatively after said ninth step to grow a desired number of monolayers of GaAs molecules

Claim 5

Growing method of Se-doped n-type GaAs crystal comprising: a first step of adsorbing a monolayer of GaCl molecule onto GaAs substrate by exposing thereof to GaCl gas. a second step of exposing said substrate to AsH 3 gas to grow As monolayer onto Ga monolayer by desorbing Cl from a GaCl molecule as HCl gas; a third step of repeating said first step and second step consequently to grow a desired number of monolayers of GaAs molecule; a fourth step of adsorbing a monolayer of GaCl molecule onto said monolayers of GaAs molecule; a fifth step of exposing said substrate after said fourth step to H 2 Se gas to grow Se monolayer onto Ga monolayer by desorption Cl from said GaCl molecule as HCl gas; a sixth step of exposing said substrate after said fifth step to AsH 3 gas to replace part of said Se by As in said Se monolayer; a seventh step of growing GaCl monolayer onto said Se monolayer by exposing said substrate after said sixth step to GaCl gas; an eighth step of exposing said substrate after said seventh step to AsH 3 gas to grow As monolayer onto Ga monolayer; a ninth step of exposing said substrate after said eighth step to GaCl gas to grow Ga monolayer onto As monolayer; and a tenth step of repeating said seventh step and eighth step alternatively after said ninth step to grow a desired number of monolayers of GaAs molecules

Claim 6

Method according to claim 3, wherein said substrate is heated to a temperature of about 450°C. before said first step.

Claim 7

Method according to claim 3, wherein time of exposure in said first step is about 10 seconds.

Claim 8

Method according to claim 3, wherein time of exposure in said second step is about 10 seconds.

Claim 9

Method according to claim 3, wherein time of exposure in said fifth step is about 10 seconds.

Claim 10

Method according to claim 3, wherein time of exposure in said sixth step is about 300 seconds.

Claim 11

Method according to claim 3, wherein time of exposure in said sixth step is varied from 5 to 1000 seconds.

Claim 12

Method according to claim 9, wherein a flow rate of AsH3 gas in said sixth step is maintained constant.

Claim 13

Method according to claim 8, wherein a flow rate of Ash3 gas in said sixth step is varied from 0.2cc/min. to 5cc/min.