EP0214610A2
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EP
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Epitaxial gallium arsenide semiconductor wafer and method of producing the same
Assignee: Daido Steel Co Ltd
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Filing: 1986-09-03
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Granted: —
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Expires: 2006-09-03
Abstract
Abstract A semiconductor wafer having an epitaxial GaAs layer, including a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5° and 5° with respect to (100); and at least one intermediate layerepitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is epitaxially grown on a major surface of a top layer of the at least one intermediate layer. The at least one intermediate layer may comprise one or more GaP/GaAsP, GaAsP/GaAs superlattice layers. The wafer may be used to produce a semiconductor light emitting element which has a plurality of crystalline GaAs layers including a light emitting layer epitaxially grown on the GaAs layer on the intermediate layer. The wafer may also be used to produce a compound semiconductor device such as amplifying and switching elements, light emitting and receiving elements and photovolataic elements. Methods for producing the semiconductor wafer, light emitting element and compound semiconductor devices are also disclosed.
Inventors
- 👤 Masayoshi Umeno
- 👤 Shiro Sakai
- 👤 Shinichiro Yahagi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 13:54
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/144; H10D; H10D62/00; H10D62/40; H10D62/405; H10D62/80; H10D62/82; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F71/00; H10F71/127; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/072; Y10S148/097; Y10S148/16; Y10S438/00; Y10S438/933; Y10S438/938
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
88 words
A semiconductor wafer having an. epitaxial GaAs layer, comprising: a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5° and 5° with respect to (100); and at least one intermediate layer epitaxially grown on said major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer, the GaAs layer being epitaxially grown on a major surface of a top layer of said at least one intermediate layer.
Claim 2
Dependent Claim
88 words
A semiconductor wafer having an. epitaxial GaAs layer, comprising: a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5° and 5° with respect to (100); and at least one intermediate layer epitaxially grown on said major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer, the GaAs layer being epitaxially grown on a major surface of a top layer of said at least one intermediate layer.
Claim 3
Dependent Claim
20 words
A semiconductor wafer according to claim 1, wherein said at least one intermediate layer consists of a single GaP layer.
Claim 4
Dependent Claim
20 words
A semiconductor wafer according to claim 1, wherein said at least one intermediate layer comprises at leat one superlattice layer.
Claim 5
Dependent Claim
57 words
A semiconductor wafer according to claim 1, wherein said at least one intermediate layer consists of at least one GaP/GaAsP superlattice layer formed on said Si substrate, and at least one GaAsp/GaAs superlattice layer formed on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaAsp/GaAs superlattice layer.
Claim 6
Dependent Claim
73 words
A semiconductor wafer according to claim 1, wherein said at least one intermediate layer consists of: an AlP layer formed on said Si substrate; an AlGaP layer formed on said AlGaP layer; at least one GaP/GaAsP superlattice layer formed on said AlGaP layer; and at least one GaAsP/GaAs superlattice layer formed on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaAsP/GaAs superlattice layer.
Claim 7
Dependent Claim
64 words
A semiconductor wafer according to claim 1, wherein said at least one intermediate layer consists of: a GaP layer formed on said Si substrate; at least one GaP/GaAsP superlattice layer formed on said GaP layer; and at least one GaAsP/GaAs superlattice layer on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaAsP/GaAs superlattice layer.
Claim 8
Independent Claim
97 words
A method of producing a semiconductor wafer having an epitaxial GaAs layer, comprising the steps of: preparing a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5 0 and 5 0 with respect to (100); forming at least one intermediate layer by epitaxy on said major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said GaAs layer; and forming said epitaxial GaAs layer on a major surface of a top layer of said at least one intermediate layer.
Claim 9
Independent Claim
97 words
A method of producing a semiconductor wafer having an epitaxial GaAs layer, comprising the steps of: preparing a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5 0 and 5 0 with respect to (100); forming at least one intermediate layer by epitaxy on said major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said GaAs layer; and forming said epitaxial GaAs layer on a major surface of a top layer of said at least one intermediate layer.
Claim 10
Dependent Claim
105 words
A semiconductor wafer having an epitaxial GaAs layer, comprising: a monocrystalline Si substrate; and at least one intermediate layer epitaxially grown on a major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer; said at least one intermediate layer consisting of: a GaP layer formed on said Si substrate; at least one GaP/GaAsP superlattice layer formed on said GaP layer; and at least one GaAsP/GaAs superlattice layer formed on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaAsp/GaAs superlattice layer.
Claim 11
Dependent Claim
105 words
A semiconductor wafer having an epitaxial GaAs layer, comprising: a monocrystalline Si substrate; and at least one intermediate layer epitaxially grown on a major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer; said at least one intermediate layer consisting of: a GaP layer formed on said Si substrate; at least one GaP/GaAsP superlattice layer formed on said GaP layer; and at least one GaAsP/GaAs superlattice layer formed on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaAsp/GaAs superlattice layer.
Claim 12
Independent Claim
76 words
A method of producing a semiconductor wafer, comprising the steps of: preparing a monocrystalline Si substrate; forming a GaP layer by epitaxy on a major surface of said monocrystallic Si substrate; forming at least one GaP/GaAsP superlattice layer by epitaxy on said GaP layer; forming at least one GaAsP/GaAs superlattice layer by epitaxy on said at least one GaP/GaAsP superlattice layer; and forming a GaAs layer by epitaxy on said at least one GaAsP/GaAs superlattice layer.
Claim 13
Independent Claim
76 words
A method of producing a semiconductor wafer, comprising the steps of: preparing a monocrystalline Si substrate; forming a GaP layer by epitaxy on a major surface of said monocrystallic Si substrate; forming at least one GaP/GaAsP superlattice layer by epitaxy on said GaP layer; forming at least one GaAsP/GaAs superlattice layer by epitaxy on said at least one GaP/GaAsP superlattice layer; and forming a GaAs layer by epitaxy on said at least one GaAsP/GaAs superlattice layer.
Claim 14
Dependent Claim
41 words
A method according to claim 9, further comprising annealing said monocrystalline Si substrate by subjecting the Si substrate at a temperature between 600°C and 1100°C, to a flow of PH 3 gas for a period ranging from 1 to 60 minutes.
Claim 15
Dependent Claim
112 words
A semiconductor light emitting element having an epitaxial GaAs layer, comprising: a monocrystalline Si substrate; at least one intermediate layer having at least one superlattice layer and epitaxially grown on a major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer, said epitaxial GaAs layer being epitaxially grown on a major surface of a top layer of said at least one intermediate layer; and a plurality of semiconductor crystalline layers_ containing GaAs as base elements, which are expitaxially grown on said expitaxial GaAs layer and superposed on each other, said crystalline layers including a light emitting layer.
Claim 16
Dependent Claim
112 words
A semiconductor light emitting element having an epitaxial GaAs layer, comprising: a monocrystalline Si substrate; at least one intermediate layer having at least one superlattice layer and epitaxially grown on a major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer, said epitaxial GaAs layer being epitaxially grown on a major surface of a top layer of said at least one intermediate layer; and a plurality of semiconductor crystalline layers_ containing GaAs as base elements, which are expitaxially grown on said expitaxial GaAs layer and superposed on each other, said crystalline layers including a light emitting layer.
Claim 17
Dependent Claim
32 words
A semiconductor light emitting element according to claim 11, wherein said major surface of said monocrystalline Si substrate is inclined at an off angle between 0.5° and 5° with respect to (100).
Claim 18
Dependent Claim
59 words
A semiconductor light emitting element according to claim 11, wherein said at least one intermediate layer consists of at least one GaP/GaAsP superlattice layer formed on said Si substrate, and at least one GaAsP/GaAs superlattice layer formed on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaAsP/GaAs superlattice layer.
Claim 19
Dependent Claim
75 words
A semiconductor light emitting element according to claim 11, wherein said at least one intermediate layer consists of: an AlP layer formed on said Si substrate; an AlGaP layer formed on said AlGaP layer; at least one GaP/GaAsP superlattice layer formed on said AlGaP layer; and at least one GaAsP/GaAs superlattice layer formed on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaP/GaAsP superlattice layer.
Claim 20
Dependent Claim
67 words
A semiconductor light emitting element according to claim 11, wherein said at least one intermediate layer consists of: a GaP layer formed on said Si substrate; at least one GaP/GaAsP superlattice layer formed on said GaP layer; and at least one GaAsP/GaAs superlattice layer formed on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaAsP/GaAs superlattice layer.
Claim 21
Dependent Claim
25 words
A semiconductor light emitting element according to claim 11, wherein said light emitting layer consists of a semiconductor crystalline layer containing AlGaP as base elements.
Claim 22
Dependent Claim
117 words
A semiconductor light emitting element having an epitaxial GaAs layer, comprising: a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5 and 5° with respect to (100); an intermediate GaP layer epitaxially grown on said major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer, said epitaxial GaAs layer being epitaxially grown on a major surface of said intermediate GaP layer; and a plurality of semiconductor crystalline layers containing GaAs as base elements, which are expitaxially grown on said expitaxial GaAs layer and superposed on each other, said crystalline layers including a light emitting layer.
Claim 23
Dependent Claim
117 words
A semiconductor light emitting element having an epitaxial GaAs layer, comprising: a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5 and 5° with respect to (100); an intermediate GaP layer epitaxially grown on said major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer, said epitaxial GaAs layer being epitaxially grown on a major surface of said intermediate GaP layer; and a plurality of semiconductor crystalline layers containing GaAs as base elements, which are expitaxially grown on said expitaxial GaAs layer and superposed on each other, said crystalline layers including a light emitting layer.
Claim 24
Dependent Claim
36 words
A semiconductor light emitting element according to claim 17, wherein said light emitting layer consists of a semiconductor crystalline layer containing GaAs as base elements, and forms a light emitting layer of a semiconductor laser diode.
Claim 25
Dependent Claim
114 words
A compound semiconductor device having an epitaxial GaAs layer, comprising: a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5 and 5 0 with respect to (100); at least one intermediate layer including at least one superlattice layer epitaxially grown on said major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer, the GaAs layer being epitaxially grown on a major surface of a top layer of said at least one intermediate layer; and at least one semiconductor element formed on said epitaxial GaAs layer on said at least one intermediate layer.
Claim 26
Dependent Claim
114 words
A compound semiconductor device having an epitaxial GaAs layer, comprising: a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5 and 5 0 with respect to (100); at least one intermediate layer including at least one superlattice layer epitaxially grown on said major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer, the GaAs layer being epitaxially grown on a major surface of a top layer of said at least one intermediate layer; and at least one semiconductor element formed on said epitaxial GaAs layer on said at least one intermediate layer.
Claim 27
Dependent Claim
58 words
A compound semiconductor device according to claim 19, wherein said at least one intermediate layer consists of at least one GaP/GaAsP superlattice layer formed on said Si substrate, and at least one GaAsP/GaAs superlattice layer formed on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaAsP/GaAs superlattice layer.
Claim 28
Dependent Claim
80 words
A compound semiconductor device according to claim 19, wherein said at least one intermediate layer consists of: an AlP layer formed on said Si substrate; an AlGaP layer formed on said AlGaP layer; at least one GaP/GaAsP superlattice layer formed on said AlGap layer; and a second superlattice layer consisting of at least one GaAsP/GaAs superlattice layer formed on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaAsP/GaAs superlattice layer.
Claim 29
Dependent Claim
66 words
A compound semiconductor device according to claim 19, wherein said at least one intermediate layer consists of: a GaP layer formed on said Si substrate; at least one GaP/GaAsP superlattice layer formed on said GaP layer; and at least one GaAsP/GaAs superlattice layer formed on said at least one GaP/GaAsP superlattice layer, said epitaxial GaAs layer being formed on said at least one GaAsP/GaAs superlattice layer.
Claim 30
Dependent Claim
59 words
A compound semiconductor device according to claim 19, wherein said at least one semiconductor element comprises at least one of elements selected from the group consisting of: amplifying and/or switching elements including bi-polar transistors and field effect transistors; light emitting elements including light emitting diodes and laser diodes; light receiving elements including phototransistors; and photovolataic elements including solar cells.
Claim 31
Dependent Claim
94 words
A compound semiconductor device having an epitaxial GaAs layer, comprising: a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5 and 5° with respect to (100); an intermediate GaP layer epitaxially grown on said major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer, said epitaxial GaAs layer being epitaxially grown on a major surface of said intermediate GaP layer; and at least one semiconductor element formed on said epitaxial GaAs layer.
Claim 32
Dependent Claim
94 words
A compound semiconductor device having an epitaxial GaAs layer, comprising: a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5 and 5° with respect to (100); an intermediate GaP layer epitaxially grown on said major surface of said monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between said Si substrate and said epitaxial GaAs layer, said epitaxial GaAs layer being epitaxially grown on a major surface of said intermediate GaP layer; and at least one semiconductor element formed on said epitaxial GaAs layer.
Claim 33
Dependent Claim
59 words
A compound semiconductor device according to claim 24, wherein said at least one semiconductor element comprises at least one of elements selected from the group consisting of: amplifying and/or switching elements including bi-polar transistors and field effect transistors; light emitting elements including light emitting diodes and laser diodes; light receiving elements including phototransistors; and photovolataic elements including solar cells.
References Cited (Backward Citations)
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