US4389973A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for performing growth of compound thin films
Assignee: PLANAR INTERNATIONAL A CORP OF FINLAND Oy
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Filing: 1981-12-11
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Granted: 1983-06-28
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Expires: 2001-12-11
Abstract
Abstract A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.
Inventors
- 👤 Tuomo S. Suntola
- 👤 Arto J. Pakkala
- 👤 Sven G. Lindfors
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:59
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/22; C23C16/30; C23C16/305; C23C16/306; C23C16/40; C23C16/403; C23C16/405; C23C16/45525; C23C16/45544; C23C16/45548; C23C16/45551; C23C26/00; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/16; C30B29/20; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69393
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
285 words
Apparatus for growing a compound thin film of different elements on a stationary substrate surface, wherein said film is formed by alternate surface reactions of different substances respectively containing said different elements, comprising: a single chamber for receiving a substrate; vacuum means coupled to said chamber; heating means for heating the substrate within said chamber; a plurality of vapor sources having outputs coupled to said chamber for separately supplying vapors of said different substances from said vapor sources to said chamber; a gas phase medium including a source of gas coupled to said chamber and to each of said vapor source outputs; and means for controlling a flow of said gas phase medium through said chamber from said gas source to said vacuum means, for supplying said gas phase medium at least at the conclusion of the separate supply of one of said vapors and prior to the separate supply of another said vapor, and for selectively controlling a flow of said gas phase medium at said source outputs to direct said medium in an upstream direction to said vapor sources, for alternately stopping the supply of vapor from said sources, for alternately stopping the supply of vapor from said sources, and to direct said medium in a downstream direction toward said chamber to isolate each said source from the other, wherein said chamber is substantially cleared of said vapors between each said alternate surface reaction in the growing of said compound thin film on said substrate, and wherein self-saturating surface reactions thereby occur during each separate supply of a vapor source, and said supply of gas prevents reactions between said sources as said compound film of different elements is grown on said substrate surface.
Claim 2
Dependent Claim
285 words
Apparatus for growing a compound thin film of different elements on a stationary substrate surface, wherein said film is formed by alternate surface reactions of different substances respectively containing said different elements, comprising: a single chamber for receiving a substrate; vacuum means coupled to said chamber; heating means for heating the substrate within said chamber; a plurality of vapor sources having outputs coupled to said chamber for separately supplying vapors of said different substances from said vapor sources to said chamber; a gas phase medium including a source of gas coupled to said chamber and to each of said vapor source outputs; and means for controlling a flow of said gas phase medium through said chamber from said gas source to said vacuum means, for supplying said gas phase medium at least at the conclusion of the separate supply of one of said vapors and prior to the separate supply of another said vapor, and for selectively controlling a flow of said gas phase medium at said source outputs to direct said medium in an upstream direction to said vapor sources, for alternately stopping the supply of vapor from said sources, for alternately stopping the supply of vapor from said sources, and to direct said medium in a downstream direction toward said chamber to isolate each said source from the other, wherein said chamber is substantially cleared of said vapors between each said alternate surface reaction in the growing of said compound thin film on said substrate, and wherein self-saturating surface reactions thereby occur during each separate supply of a vapor source, and said supply of gas prevents reactions between said sources as said compound film of different elements is grown on said substrate surface.
Claim 3
Dependent Claim
276 words
Apparatus for growing a compound thin film of different elements on a substrate surface, wherein said film is formed by alternate surface reactions of different substances respectively containing said different elements, comprising a chamber for receiving a substrate; vacuum means coupled to said chamber; a plurality of vapor sources coupled to said chamber for selectively and separately supplying vapors of said different substances from said vapor sources to said chamber; a gas phase medium including a source of gas coupled to said chamber; means for controlling a flow of said gas phase medium through said chamber from said gas source to said vacuum means, for supplying said gas phase medium at least at the conclusion of the separate supply of one of said vapors and prior to the separate supply of another said vapor, wherein said chamber is substantially cleared of said vapors between each said alternate surface reaction in the growing of said compound thin film on said substrate; auxiliary vacuum means coupled to each of said plurality of vapor sources at an upstream position thereof; and means interconnecting said gas medium to respective positions intermediate said vapor sources and said chamber; wherein said control means further selectively controls said gas flow of said gas from said intermediate positions to cause said gas flow to be directed from said positions to said auxiliary vacuum means and to said chamber, thereby selectively isolating each of said vapor sources; wherein self-saturating surface reactions thereby occur during each separate supply of a vapor source, and said supply of gas prevents reactions between said source vapors as said compound film of different elements is grown on said substrate surface.
Claim 4
Dependent Claim
276 words
Apparatus for growing a compound thin film of different elements on a substrate surface, wherein said film is formed by alternate surface reactions of different substances respectively containing said different elements, comprising a chamber for receiving a substrate; vacuum means coupled to said chamber; a plurality of vapor sources coupled to said chamber for selectively and separately supplying vapors of said different substances from said vapor sources to said chamber; a gas phase medium including a source of gas coupled to said chamber; means for controlling a flow of said gas phase medium through said chamber from said gas source to said vacuum means, for supplying said gas phase medium at least at the conclusion of the separate supply of one of said vapors and prior to the separate supply of another said vapor, wherein said chamber is substantially cleared of said vapors between each said alternate surface reaction in the growing of said compound thin film on said substrate; auxiliary vacuum means coupled to each of said plurality of vapor sources at an upstream position thereof; and means interconnecting said gas medium to respective positions intermediate said vapor sources and said chamber; wherein said control means further selectively controls said gas flow of said gas from said intermediate positions to cause said gas flow to be directed from said positions to said auxiliary vacuum means and to said chamber, thereby selectively isolating each of said vapor sources; wherein self-saturating surface reactions thereby occur during each separate supply of a vapor source, and said supply of gas prevents reactions between said source vapors as said compound film of different elements is grown on said substrate surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-06-27 | 1986-12-27 | 1987-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-06-27 | 1990-12-27 | 1991-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-06-27 | 1994-12-27 | 1995-06-28 | $7700.00 | Window Closed / Lapsed |