US5484664A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hetero-epitaxially grown compound semiconductor substrate
Assignee: Fujitsu Ltd
•
Filing: 1994-01-21
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Granted: 1996-01-16
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Expires: 2014-01-21
Abstract
Abstract A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Inventors
- 👤 Kuninori Kitahara
- 👤 Nobuyuki Ohtsuka
- 👤 Masashi Ozeki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3218; H10P14/3221; Y; Y10; Y10S; Y10S438/00; Y10S438/933; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12674
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
74 words
A semiconductor structure comprising: a silicon substrate; a single crystal buffer layer of a compound containing a group III element and a group V element and selected from the group consisting of aluminum arsenide, aluminum nitride and aluminum phosphide, on the silicon substrate; wherein the group III element and the group V element are stacked in alternate monoatomic layers on the silicon substrate; and a gallium arsenide single crystal layer on the buffer layer.
Claim 2
Dependent Claim
74 words
A semiconductor structure comprising: a silicon substrate; a single crystal buffer layer of a compound containing a group III element and a group V element and selected from the group consisting of aluminum arsenide, aluminum nitride and aluminum phosphide, on the silicon substrate; wherein the group III element and the group V element are stacked in alternate monoatomic layers on the silicon substrate; and a gallium arsenide single crystal layer on the buffer layer.
Claim 3
Dependent Claim
13 words
A semiconductor structure according to claim 1, wherein said compound is aluminum arsenide.
Claim 4
Dependent Claim
13 words
A semiconductor structure according to claim 1, wherein said compound is aluminum nitride.
Claim 5
Dependent Claim
13 words
A semiconductor structure according to claim 1, wherein said compound is aluminum phosphide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-15 | 1999-07-17 | 2000-01-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-15 | 2003-07-17 | 2004-01-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-15 | 2007-07-17 | 2008-01-16 | $7700.00 | Window Closed / Lapsed |