US4834831A
Expired / Lapsed
US
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Method for growing single crystal thin films of element semiconductor
Assignee: JUNICHI NISHIZAWA 6-16 KOMEGAFUKURO 1-CHOME SENDAI-SHI MIYAGI JAPAN
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Filing: 1987-09-04
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Granted: 1989-05-30
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Expires: 2007-09-04
Abstract
Abstract A method for growing a single crystal thin film of an element semiconductor which comprises repeating the successive operations of feeding a single kind of gas containing the element semiconductor as a component element onto a substrate heated in a growth chamber and then exhausting the gas in the growth chamber under controlled conditions and thereby growing the single crystal thin film of said element semiconductor in a desired thickness with a precision of monomolecular layer. In an alternate method for growing a single crystal thin film of an element semiconductor, the sole gas containing the element semiconductor is continuously fed onto the substrate for a given period of time, thereby forming a single crystal thin film of element semiconductor having a desired thickness. According to the present invention, there can be obtained single crystal thin films with high quality in a high reproducibility, by simplified operating parameters and growing apparatus.
Inventors
- 👤 Junichi Nishizawa
- 👤 Kenji Aoki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:34
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; C30B25/14; C30B29/60; C30B29/68
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
140 words
A method for growing a single crystal thin film of silicon, said method comprising: heating a substrate to a temperature of 750° to 900° C., repeating the successive steps of feeding a single kind of gas selected from the group consisting of SiH 2 Cl 2 , SiHCl 3 and SiCl 4 onto said substrate in a growth chamber at a pressure of 10 -4 to 10 2 Pa for from 1 to 60 seconds and then exhausting said gas in the growth chamber for from 1 to 120 seconds and thereby growing a thin layer having a thickness on the order of from one to several monomolecular layers during each cycle of said feeding and exhausting steps, and continuing said successive steps until a single crystal thin film made of the desired number of said thin layers is obtained.
Claim 2
Independent Claim
140 words
A method for growing a single crystal thin film of silicon, said method comprising: heating a substrate to a temperature of 750° to 900° C., repeating the successive steps of feeding a single kind of gas selected from the group consisting of SiH 2 Cl 2 , SiHCl 3 and SiCl 4 onto said substrate in a growth chamber at a pressure of 10 -4 to 10 2 Pa for from 1 to 60 seconds and then exhausting said gas in the growth chamber for from 1 to 120 seconds and thereby growing a thin layer having a thickness on the order of from one to several monomolecular layers during each cycle of said feeding and exhausting steps, and continuing said successive steps until a single crystal thin film made of the desired number of said thin layers is obtained.
Claim 3
Independent Claim
173 words
A method for growing a single crystal thin film of silicon by the molecular layer epitaxy crystal-growth method, which consists essentially of: cyclically performing alternating steps of 1. feeding a single stream of gas selected from the group consisting of SiH 2 Cl 2 , SiHCl 3 and SiCl 4 , for from 1 to 60 seconds, onto a substrate heated to a temperature of from 750° to 900° C. and located in a crystal growth chamber having an internal pressure of from 10 -4 to 10 2 Pa, and then 2. discontinuing feeding of said single stream of gas and exhausting said gas in said growth chamber for from 1 to 20 seconds, so that in each cycle of steps (1) and (2) there is formed a thin layer having a thickness of from about a one-half molecular layer to about a dimolecular layer whereby to grow a single crystal thin film of silicon of a desired thickness on said substrate, the same gas being used in each repetition of step (1).
Claim 4
Independent Claim
173 words
A method for growing a single crystal thin film of silicon by the molecular layer epitaxy crystal-growth method, which consists essentially of: cyclically performing alternating steps of 1. feeding a single stream of gas selected from the group consisting of SiH 2 Cl 2 , SiHCl 3 and SiCl 4 , for from 1 to 60 seconds, onto a substrate heated to a temperature of from 750° to 900° C. and located in a crystal growth chamber having an internal pressure of from 10 -4 to 10 2 Pa, and then 2. discontinuing feeding of said single stream of gas and exhausting said gas in said growth chamber for from 1 to 20 seconds, so that in each cycle of steps (1) and (2) there is formed a thin layer having a thickness of from about a one-half molecular layer to about a dimolecular layer whereby to grow a single crystal thin film of silicon of a desired thickness on said substrate, the same gas being used in each repetition of step (1).
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |