Patent US4834831A successfully refreshed from Google Patents.
US4834831A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for growing single crystal thin films of element semiconductor
Assignee: JUNICHI NISHIZAWA 6-16 KOMEGAFUKURO 1-CHOME SENDAI-SHI MIYAGI JAPAN
•
Filing: 1987-09-04
•
Granted: 1989-05-30
•
Expires: 2007-09-04
Abstract
Abstract A method for growing a single crystal thin film of an element semiconductor which comprises repeating the successive operations of feeding a single kind of gas containing the element semiconductor as a component element onto a substrate heated in a growth chamber and then exhausting the gas in the growth chamber under controlled conditions and thereby growing the single crystal thin film of said element semiconductor in a desired thickness with a precision of monomolecular layer. In an alternate method for growing a single crystal thin film of an element semiconductor, the sole gas containing the element semiconductor is continuously fed onto the substrate for a given period of time, thereby forming a single crystal thin film of element semiconductor having a desired thickness. According to the present invention, there can be obtained single crystal thin films with high quality in a high reproducibility, by simplified operating parameters and growing apparatus.
Inventors
- 👤 Junichi Nishizawa
- 👤 Kenji Aoki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:09
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; C30B25/14; C30B29/60; C30B29/68
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
140 words
A method for growing a single crystal thin film of silicon, said method comprising: heating a substrate to a temperature of 750° to 900° C., repeating the successive steps of feeding a single kind of gas selected from the group consisting of SiH 2 Cl 2 , SiHCl 3 and SiCl 4 onto said substrate in a growth chamber at a pressure of 10 -4 to 10 2 Pa for from 1 to 60 seconds and then exhausting said gas in the growth chamber for from 1 to 120 seconds and thereby growing a thin layer having a thickness on the order of from one to several monomolecular layers during each cycle of said feeding and exhausting steps, and continuing said successive steps until a single crystal thin film made of the desired number of said thin layers is obtained.
Claim 2
Independent Claim
140 words
A method for growing a single crystal thin film of silicon, said method comprising: heating a substrate to a temperature of 750° to 900° C., repeating the successive steps of feeding a single kind of gas selected from the group consisting of SiH 2 Cl 2 , SiHCl 3 and SiCl 4 onto said substrate in a growth chamber at a pressure of 10 -4 to 10 2 Pa for from 1 to 60 seconds and then exhausting said gas in the growth chamber for from 1 to 120 seconds and thereby growing a thin layer having a thickness on the order of from one to several monomolecular layers during each cycle of said feeding and exhausting steps, and continuing said successive steps until a single crystal thin film made of the desired number of said thin layers is obtained.
Claim 3
Independent Claim
173 words
A method for growing a single crystal thin film of silicon by the molecular layer epitaxy crystal-growth method, which consists essentially of: cyclically performing alternating steps of 1. feeding a single stream of gas selected from the group consisting of SiH 2 Cl 2 , SiHCl 3 and SiCl 4 , for from 1 to 60 seconds, onto a substrate heated to a temperature of from 750° to 900° C. and located in a crystal growth chamber having an internal pressure of from 10 -4 to 10 2 Pa, and then 2. discontinuing feeding of said single stream of gas and exhausting said gas in said growth chamber for from 1 to 20 seconds, so that in each cycle of steps (1) and (2) there is formed a thin layer having a thickness of from about a one-half molecular layer to about a dimolecular layer whereby to grow a single crystal thin film of silicon of a desired thickness on said substrate, the same gas being used in each repetition of step (1).
Claim 4
Independent Claim
173 words
A method for growing a single crystal thin film of silicon by the molecular layer epitaxy crystal-growth method, which consists essentially of: cyclically performing alternating steps of 1. feeding a single stream of gas selected from the group consisting of SiH 2 Cl 2 , SiHCl 3 and SiCl 4 , for from 1 to 60 seconds, onto a substrate heated to a temperature of from 750° to 900° C. and located in a crystal growth chamber having an internal pressure of from 10 -4 to 10 2 Pa, and then 2. discontinuing feeding of said single stream of gas and exhausting said gas in said growth chamber for from 1 to 20 seconds, so that in each cycle of steps (1) and (2) there is formed a thin layer having a thickness of from about a one-half molecular layer to about a dimolecular layer whereby to grow a single crystal thin film of silicon of a desired thickness on said substrate, the same gas being used in each repetition of step (1).
References Cited (Backward Citations)
US4013502A
Cited
US3945864A
Cited
US3961997A
Cited
US4179312A
Cited
US4346513A
Cited
DE3107260A1
Cited
US4637127A
Cited
US4392453A
Cited
JPS58209116A
Cited
US4522662A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |