US6130147A
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Methods for forming group III-V arsenide-nitride semiconductor materials
Assignee: Viavi Solutions Inc
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Filing: 1997-03-18
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Granted: 2000-10-10
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Expires: 2017-03-18
Abstract
Abstract Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Inventors
- 👤 Jo S. Major
- 👤 David F. Welch
- 👤 Donald R. Scifres
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:38
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/3235; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H01S5/32308; H01S5/32341; H01S5/32358; H01S5/32366; H01S5/32375
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
109 words
A method for forming a high bandgap semiconductor material comprising: providing a crystalline substrate, epitaxially growing on said substrate a compound semiconductor material having a crystal lattice with a lattice constant substantially matching that of said substrate, said material including at least one element from the group consisting of Al, B, Ga and In disposed at Group III lattice sites and a concentration of N atoms of at least 2% and a concentration of As atoms of at least 2% disposed at Group V lattice sites, the compound semiconductor material composed of In w Al x Ga 1-x-w As 1-y-z P z N y , where 0≦w≦1.0≦x≦1.0.02≦y≦0.98.0.ltoreq.z≦0.96 and 0.02≦1-y-z≦0.98.
Claim 2
Independent Claim
109 words
A method for forming a high bandgap semiconductor material comprising: providing a crystalline substrate, epitaxially growing on said substrate a compound semiconductor material having a crystal lattice with a lattice constant substantially matching that of said substrate, said material including at least one element from the group consisting of Al, B, Ga and In disposed at Group III lattice sites and a concentration of N atoms of at least 2% and a concentration of As atoms of at least 2% disposed at Group V lattice sites, the compound semiconductor material composed of In w Al x Ga 1-x-w As 1-y-z P z N y , where 0≦w≦1.0≦x≦1.0.02≦y≦0.98.0.ltoreq.z≦0.96 and 0.02≦1-y-z≦0.98.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the compound semiconductor material forms a layer that is strained and is sufficiently thin to avoid defect formation.
Claim 4
Dependent Claim
27 words
The method of claim 1 wherein concentration of N to As in the compound semiconductor material is either about 5% or less or about 90% or more.
Claim 5
Dependent Claim
54 words
The method of claim 1 wherein levels of N (≦0.05) or As (≧0.90) permit an additional amount of one or more of B, Al, In or P to the compound semiconductor material reducing the bandgap bowing of the compound semiconductor material as compared to a compound semiconductor material comprising GaAs 1-x N x .
Claim 6
Dependent Claim
30 words
The method of claim 1 wherein the substrate is selected from the group consisting of Al 2 O 3 , MgO, GaP, Si, GaAs, Ge, SiC, ZnSe, ZnO and diamond.
Claim 7
Dependent Claim
16 words
The method of claim 1 wherein the compound semiconductor material is a strained layer quantum well.
Claim 8
Dependent Claim
47 words
The method of claim 1 wherein said growing on said substrate a compound semiconductor material includes LP-MOCVD at a temperature of less than 600° C., thereby increasing the concentration of N atoms in said compound semiconductor material by lowering the desorption of N atoms during said growing.
Claim 9
Dependent Claim
47 words
The method of claim 1 wherein said growing on said substrate a compound semiconductor material includes MBE at a temperature of less than 600° C., thereby increasing the concentration of N atoms in said compound semiconductor material by lowering the desorption of N atoms during said growing.
Claim 10
Dependent Claim
64 words
The method of claim 1 wherein said growing on said substrate a compound semiconductor material includes forming a sequence of thin layers of semiconductor compounds having at least one element from the group consisting of Al, Ga and In disposed at group III lattice sites and one element from the group consisting of N, P, As and Sb disposed at group V lattice sites.
Claim 11
Dependent Claim
37 words
The method of claim 1 wherein the compound semiconductor material exhibits a bandgap bowing parameter allowing for different composition of the alloy with adjustment of the ratio of As to N in the deposit of the material.
Claim 12
Dependent Claim
18 words
The method of claim 1 wherein the compound semiconductor material is a semiconductor layer in a semiconductor device.
Claim 13
Dependent Claim
39 words
The method of claim 7 wherein said LP-MOCVD includes disposing a gas including molecules having H 2 NNH 2 compounds adjacent to said substrate, such that N atoms are incorporated in said material in a concentration greater than 2%.
Claim 14
Dependent Claim
37 words
The method of claim 7 wherein said LP-MOCVD includes disposing a gas including organometallic molecules having N atoms adjacent to said substrate, such that N atoms are incorporated in said material in a concentration greater than 2%.
Claim 15
Dependent Claim
66 words
The method of claim 7 wherein said LP-MOCVD includes: providing gaseous NH 3 , cracking said NH 3 , including catalyzing gaseous NH 3 with gaseous AsH 3 and gaseous PH 3 , thereby producing gaseous N atoms, and disposing said gaseous N atoms adjacent to said substrate, such that N and As atoms are each incorporated in said material in a concentration greater than 2%.
Claim 16
Dependent Claim
35 words
The method of claim 8 wherein said MBE includes: dissociating NH 3 gas with an electron cyclotron resonator to produce radical N atoms, and directing a beam having said radical N atoms toward said substrate.
Claim 17
Dependent Claim
72 words
The method of claim 9 wherein said substrate is GaP and most of said sequence of thin layers of semiconductor compounds includes one element from the group consisting of Al and Ga disposed at group III lattice sites, and also includes a ratio of fifteen layers having the element P for every four layers having the element As and every one layer having the element N disposed at group V lattice sites.
Claim 18
Dependent Claim
46 words
The method of claim 10 wherein said bandgap bowing parameter is approximated by the quadratic relationship, E.sub.gap =E.sub.gap,I (1-x)+E.sub.gap,II (x)-C.sub.I,II (x) (1-x), where E gapI and E gap ,II are the bandgaps of the constituent binary materials and C I ,II is the bandgap bowing parameter.
Claim 19
Dependent Claim
16 words
The method of claim 10 wherein said bandgap bowing parameter is in excess of 1 eV.
Claim 20
Dependent Claim
43 words
The method of claim 10 wherein said material exhibits a bandgap bowing parameter, adjusting the ratio of As to N in said alloy to reduce its direct bandgap resulting in higher electrical conductivity in the semiconductor alloy due to said bandgap bowing parameter.
Claim 21
Dependent Claim
14 words
The method of claim 11 wherein the semiconductor layer is an ohmic contact layer.
Claim 22
Dependent Claim
14 words
The method of claim 11 wherein the semiconductor device is a light emitting device.
Claim 23
Dependent Claim
12 words
The method of claim 11 wherein the semiconductor device is a laser.
Claim 24
Dependent Claim
18 words
The method of claim 11 wherein the semiconductor device has an emission wavelength within the infrared wavelength range.
Claim 25
Dependent Claim
17 words
The method of claim 11 wherein the semiconductor device has an emission wavelength greater than 440 nm.
Claim 26
Dependent Claim
42 words
The method of claim 11 wherein selection of the molecular factors, w, x, y and z, for the semiconductor layer as well as other layers in the device providing for different emission wavelengths within the lightwave spectrum from UV to IR wavelengths.
Claim 27
Dependent Claim
15 words
The method of claim 11 wherein the semiconductor layer is deposited employing atomic layer epitaxy.
Claim 28
Dependent Claim
30 words
The method of claim 26 wherein the substrate is selected from the group consisting of Al 2 O 3 , MgO, GaP, Si, GaAs, Ge, SiC, ZnSe, ZnO and diamond.
Claim 29
Dependent Claim
19 words
The method of claim 26 wherein the compound semiconductor material is lattice matched to a substrate due to strain.
Claim 30
Independent Claim
107 words
A method of forming a high bandgap semiconductor material comprising: providing a substrate selected from the group consisting of Al 2 O 3 , SiC, ZnO, and InN, and epitaxially growing on said substrate employing MOCVD in a reactor a compound semiconductor material with a Group V sublattice composed primarily of nitrogen with at least one other Group V constituent constituting a minority constituent of said sublattice, the improvement comprising providing a nitrogen vapor source for providing a nitrogen vapor into the reactor and catalyzing the nitrogen vapor by introducing at least one catalyst into the reactor with the nitrogen vapor to increase the cracking efficiency thereof.
Claim 31
Independent Claim
107 words
A method of forming a high bandgap semiconductor material comprising: providing a substrate selected from the group consisting of Al 2 O 3 , SiC, ZnO, and InN, and epitaxially growing on said substrate employing MOCVD in a reactor a compound semiconductor material with a Group V sublattice composed primarily of nitrogen with at least one other Group V constituent constituting a minority constituent of said sublattice, the improvement comprising providing a nitrogen vapor source for providing a nitrogen vapor into the reactor and catalyzing the nitrogen vapor by introducing at least one catalyst into the reactor with the nitrogen vapor to increase the cracking efficiency thereof.
Claim 32
Dependent Claim
15 words
The method of claim 29 wherein the catalyst is PH 3 or AsH 3 .
Claim 33
Dependent Claim
19 words
(New) The method of claim 29 wherein the catalyst is a combination of PH 3 and AsH 3 .
Claim 34
Dependent Claim
13 words
The method of claim 29 wherein the nitrogen source is NH 3 .
Claim 35
Dependent Claim
14 words
The method of claim 32 comprising the step of providing an additional nitrogen source.
Claim 36
Dependent Claim
21 words
The method of claim 33 wherein the additional nitrogen source is H 2 NNH 2 or organometallic molecules containing nitrogen atoms.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-10 | 2004-04-10 | 2004-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-10 | 2008-04-10 | 2008-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-10 | 2012-04-10 | 2012-10-10 | $7700.00 | Window Closed / Lapsed |