US5937274A
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Fabrication method for AlGaIn NPAsSb based devices
Assignee: Opnext Japan Inc
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Filing: 1997-12-18
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Granted: 1999-08-10
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Expires: 2017-12-18
Abstract
Abstract A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor AlaGabIn1-a-bNxPyAszSb1-x-y-z (0</=a</=1, 0</=b</=1, 0<x<1, 0</=y<1, 0</=z<1), and a method of making the semiconductor device and apparatus. For at least two semiconductor layers out of the plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is set at less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers. In a method for manufacturing a semiconductor device, Al, Ga, In, N, P, As and Sb as materials are prepared as materials for a semiconductor device, and a plurality of semiconductor layers are epitaxially grown by using said materials, including a layer of nitrogen-containing alloy semiconductor AlaGabIn1-a-bNxPyAszSb1-x-y-z (0</=a</=1, 0</=b</=1, 0<x<1, 0</=y<1, 0</=z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10-2 Torr or higher.
Inventors
- 👤 Masahiko Kondow
- 👤 Kazuhisa Uomi
- 👤 Hitoshi Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:17
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; B; B82; B82Y; B82Y20/00; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0158; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H10F39/00; H10F39/10; H10F39/107; H10F55/00; H10F55/18; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; H10F77/12485; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2909; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3218; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/021; H01S5/30; H01S5/32; H01S5/323; H01S5/3235; H01S5/32358; H01S5/32366; H01S5/32375; H01S5/34; H01S5/343; H01S5/3434; H10H29/00; H10H29/10; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
84 words
A method for manufacturing a semiconductor device, comprising the step of: epitaxially growing a plurality of semiconductor layers by using materials selected from the group consisting of Al, Ga, In, N, P, As and Sb, said plurality of semiconductor layers including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) formed using nitrogen radical as nitrogen material, in a vacuum of substantially 10 -2 Torr or higher vacuum.
Claim 2
Independent Claim
84 words
A method for manufacturing a semiconductor device, comprising the step of: epitaxially growing a plurality of semiconductor layers by using materials selected from the group consisting of Al, Ga, In, N, P, As and Sb, said plurality of semiconductor layers including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) formed using nitrogen radical as nitrogen material, in a vacuum of substantially 10 -2 Torr or higher vacuum.
Claim 3
Dependent Claim
12 words
A semiconductor device manufactured by the manufacturing method according to claim 1.
Claim 4
Independent Claim
145 words
A method for manufacturing a semiconductor device, comprising the step of: epitaxially growing a plurality of semiconductor layers by using materials selected from the group consisting of Al, Ga, In, N, P, As and Sb, said plurality of semiconductor layers including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) formed using nitrogen radical as nitrogen material, in a vacuum of substantially 10 -2 Torr or higher vacuum, wherein, in said epitaxially growing a plurality of semiconductor layers, for at least two semiconductor layers out of said plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is controlled so as to be less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers.
Claim 5
Independent Claim
145 words
A method for manufacturing a semiconductor device, comprising the step of: epitaxially growing a plurality of semiconductor layers by using materials selected from the group consisting of Al, Ga, In, N, P, As and Sb, said plurality of semiconductor layers including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) formed using nitrogen radical as nitrogen material, in a vacuum of substantially 10 -2 Torr or higher vacuum, wherein, in said epitaxially growing a plurality of semiconductor layers, for at least two semiconductor layers out of said plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is controlled so as to be less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers.
Claim 6
Dependent Claim
75 words
A manufacturing method according to claim 3, wherein in a process for growing at least one of said plurality of semiconductor layers, a stress compensated layer with the stress canceled is formed by alternately depositing layers having compressive strain and layers having tensile strain, and each said layer having tensile strain is said nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1).
Claim 7
Dependent Claim
12 words
A semiconductor device manufactured by the manufacturing method according to claim 3.
Claim 8
Dependent Claim
22 words
A manufacturing method according to claim 3, wherein said nitrogen radical is nitrogen obtained by activating nitrogen molecules by radio frequency plasma.
Claim 9
Dependent Claim
29 words
A manufacturing method according to claim 3, wherein the plurality of semiconductor layers are semiconductor layers stacked on one another on a substrate, the substrate being a silicon substrate.
Claim 10
Dependent Claim
16 words
A manufacturing method according to claim 7, wherein said silicon substrate has semiconductor elements formed thereon.
Claim 11
Independent Claim
95 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device; and epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10 -2 Torr or higher, wherein as impurity materials for said semiconductor device, C, Be, Si and Sn are used.
Claim 12
Independent Claim
95 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device; and epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10 -2 Torr or higher, wherein as impurity materials for said semiconductor device, C, Be, Si and Sn are used.
Claim 13
Independent Claim
95 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device; and epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10 -2 Torr or higher, wherein said nitrogen radical is nitrogen obtained by activating nitrogen molecules by radio frequency plasma.
Claim 14
Independent Claim
95 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device; and epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10 -2 Torr or higher, wherein said nitrogen radical is nitrogen obtained by activating nitrogen molecules by radio frequency plasma.
Claim 15
Independent Claim
102 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device; and epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10 -2 Torr or higher, wherein the plurality of semiconductor layers are semiconductor layers stacked on one another on a substrate, the substrate being a silicon substrate.
Claim 16
Independent Claim
102 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device; and epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10 -2 Torr or higher, wherein the plurality of semiconductor layers are semiconductor layers stacked on one another on a substrate, the substrate being a silicon substrate.
Claim 17
Dependent Claim
16 words
A manufacturing method according to claim 11, wherein said silicon substrate has semiconductor elements formed thereon.
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