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US5491710A Expired / Lapsed US ⏱️ 0.0 years remaining

Strain-compensated multiple quantum well laser structures

Assignee: Cornell Research Foundation Inc
•
Filing: 1994-05-05
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Granted: 1996-02-13
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Expires: 2014-05-05
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Abstract

Abstract Semiconductor laser structures utilize strain-compensated multiple quantum wells as the laser gain medium to greatly increase the gain and substantially reduce mirror reflectivity constraints in long wavelength (1.3 and 1.55 μm) surface emitting, and other, lasers. The strain-compensated multiple quantum well structures include a plurality of quantum well barrier layer pairs with each quantum well layer being placed under strain and each barrier layer being placed under an equal and opposite strain so that the net overall strain on the quantum well structure is zero. As a result, it can be made as thick as necessary for the lasers to operate efficiently at long wavelengths. Each of the quantum well layers are also preferably p-doped to further increase the optical gain. Another embodiment of the present invention employs the strain-compensated multiple quantum wells in combination with grating-coupling in a surface or edge emitting laser. The gratings are formed on top of the multiple quantum well structure to simplify the fabrication process, and are provided with strong light coupling characteristics to reduce the overall width of the laser structure to as low as 10 microns.

Inventors

  • 👤 Yu-hwa Lo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 15:39
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/185; H01S5/187; H01S5/183; H01S5/18361; H01S5/18369; H01S5/18341; H01S5/18375; H01S5/18386; H01S5/18394; H01S5/30; H01S5/305; H01S5/3054; H01S5/34; H01S5/3403; H01S5/3406; H01S5/343; H01S5/34306; H01S5/34313; H01S5/3434; H01S5/40; H01S5/4025; H01S5/4087; H01S5/42; H01S5/423

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 70 words
A semiconductor vertical cavity surface emitting laser structure comprising: a) a substrate; b) a laser body on said substrate; c) a strain-compensated multiple quantum well structure in said laser body and forming a gain medium for said laser structure; and d) first and second reflective means positioned below and above, respectively, said strain-compensated multiple quantum well structure for forming a vertical cavity for said laser structure in said laser body.
Claim 2
Dependent Claim 70 words
A semiconductor vertical cavity surface emitting laser structure comprising: a) a substrate; b) a laser body on said substrate; c) a strain-compensated multiple quantum well structure in said laser body and forming a gain medium for said laser structure; and d) first and second reflective means positioned below and above, respectively, said strain-compensated multiple quantum well structure for forming a vertical cavity for said laser structure in said laser body.
Claim 3
Dependent Claim 21 words
The laser structure of claim 1, wherein said strain-compensated multiple quantum well structure includes a plurality of p-doped quantum well layers.
Claim 4
Dependent Claim 29 words
The laser structure of claim 1, wherein said multiple quantum well structure includes a plurality of strained quantum well layers alternating with a plurality of oppositely strained barrier layers.
Claim 5
Dependent Claim 25 words
The laser structure of claim 1, wherein said laser structure is a single frequency laser operating at a wavelength of at least approximately 1.3 μm.
Claim 6
Dependent Claim 41 words
The laser structure of claim 1, wherein said first and second reflective means further comprise: i) a first reflective mirror layer between said substrate and said laser body; and ii) a second reflective mirror layer on top of said laser body.
Claim 7
Dependent Claim 21 words
The laser structure of claim 5, further including an index matching layer between said laser body and said second reflective mirror.
Claim 8
Dependent Claim 25 words
The laser structure of claim 1, wherein said first reflective means comprises a semiconductor Bragg mirror, and said second reflective means comprises a dielectric mirror.
Claim 9
Dependent Claim 19 words
The laser structure of claim 1, wherein said first and second reflective means comprise first and second dielectric mirrors.
Claim 10
Dependent Claim 24 words
The laser structure of claim 1, wherein said first reflective means comprises a bonded Bragg mirror disposed between said substrate and said laser body.
Claim 11
Dependent Claim 22 words
The laser structure of claim 9, wherein said substrate is formed from GaAs, and said bonded Bragg mirror is formed from GaAs/AlAs.

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-02-12 1999-08-14 2000-02-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-02-12 2003-08-14 2004-02-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-02-12 2007-08-14 2008-02-13 $7700.00 Window Closed / Lapsed

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