US5363392A
Expired / Lapsed
US
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Strained quantum well type semiconductor laser device
Assignee: Furukawa Electric Co Ltd
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Filing: 1992-11-18
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Granted: 1994-11-08
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Expires: 2012-11-18
Abstract
Abstract A strained quantum well type semiconductor laser device is disclosed to comprise a plurality of layers including a quantum well active layer formed on a semiconductor substrate characterized in that tensile strained quantum well layers and compression strained barrier layers are stacked alternately to form said quantum well active layer and the quantum well layers are made of either InGaAs or InGaAsP and InP, when the semiconductor substrate is made of InP, InGaP or GaAs, respectively.
Inventors
- 👤 Akihiko Kasukawa
- 👤 Toshio Kikuta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:04
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; B; B82; B82Y; B82Y20/00; H01S5/02; H01S5/0206; H01S5/0211; H01S5/3403; H01S5/3406; H01S5/343
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
63 words
A strained quantum well type semiconductor laser device comprising a plurality of layers including a quantum well active layer formed on a semiconductor substrate, wherein each quantum well active layer comprises tensile strain quantum well layers and compressive strain barrier layers stacked alternately, wherein said quantum well layers are made of either InGaAs or InGaAsP and have a thickness between 100 and 200Å.
Claim 2
Dependent Claim
63 words
A strained quantum well type semiconductor laser device comprising a plurality of layers including a quantum well active layer formed on a semiconductor substrate, wherein each quantum well active layer comprises tensile strain quantum well layers and compressive strain barrier layers stacked alternately, wherein said quantum well layers are made of either InGaAs or InGaAsP and have a thickness between 100 and 200Å.
Claim 3
Dependent Claim
25 words
A strained quantum well type semiconductor laser device according to claim 1, wherein each of the barrier layers has a thickness between 30 and 250Å.
Claim 4
Dependent Claim
29 words
A strained quantum well type semiconductor laser device according to claim 1, wherein said quantum well layers are made of InGaAsP, and the semiconductor substrate is made of GaAs.
Claim 5
Dependent Claim
37 words
A strained quantum well type semiconductor laser device according to claim 1, wherein the barrier layers are made of GaInAsP, AlGaInAs, and have a thickness of 100 to 200Å and the semiconductor substrate is made of InP.
Claim 6
Dependent Claim
36 words
A strained quantum well type semiconductor laser device according to claim 1, wherein the barrier layers are made of AlGaInP, and have a thickness of 100 to 200Å and the semiconductor substrate is made of GaAs.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-07 | 1998-05-09 | 1998-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-07 | 2002-05-09 | 2002-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-07 | 2006-05-09 | 2006-11-08 | $7700.00 | Window Closed / Lapsed |