Semiconductor laser with vertical resonator

Abstract

Abstract The invention relates to a semiconductor laser with a resonator constructed on and vertical to a substrate surface. The vertical resonator has a first reflector mirror which is a multilayer laminate mirror formed on the substrate surface, an active region on the first mirror and a second reflector mirror region including a multilayer laminate mirror on the active region and a metal layer at the top. The second mirror region is provided with a phase grating layer which is adjacent to and in contact with the metal layer and has a periodical structure in a direction in a transversal plane with a period not longer than the laser oscillation wavelength. For example, the grating layer is a relief layer having parallel grooves in the upper surface, and the grooves are filled up with a bottom part of the metal layer. The grating layer differentiates the reflectance of the second reflector mirror region depending on the direction of polarization of incident light. Therefore it is possible to emit laser light polarized in a specific direction.

Inventors

• 👤 Yutaka Yamanaka

Bibliographic Details