US4905246A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Sharp Corp
•
Filing: 1988-12-28
•
Granted: 1990-02-27
•
Expires: 2008-12-28
Abstract
Abstract A semiconductor laser device containing a laser oscillation-operating area which comprises a Ga 1-x Al x As (0≦x≦1) quantum well active layer, Ga 1-y Al y As optical guiding layers interposing the quantum well active layer therebetween, and Ga 1-z Al z As cladding layers superposed on the optical guiding layers, respectively, wherein the AlAs mole fraction y at the area of each of the optical guiding layers positioned in the vicinity of the interface of the optical guiding layers and the quantum well active layer meets the relationships y-z≧0.3 and z-y≦0.25.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Kosei Takahashi
- 👤 Masafumi Kondo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:22
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; B; B82; B82Y; B82Y20/00; H01S5/3407; H01S5/3432
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
92 words
In a semiconductor laser device containing a laser oscillation-operating area which comprises a Ga 1-x A 1x As (0≦x≦1) quantum well active layer, Ga 1-y Al y As optical guiding layers interposing said quantum well active layer therebetween, and Ga 1-z Al z As cladding layers superposed on said optical guiding layers, respectively, the improvement wherein the AlAs mole fraction y at the area of each of said optical guiding layers positioned adjacent the interface of the optical guiding layers and the quantum well active layer meets the relationships y-x≧0.3 and z-y≦≦0.25.
Claim 2
Dependent Claim
92 words
In a semiconductor laser device containing a laser oscillation-operating area which comprises a Ga 1-x A 1x As (0≦x≦1) quantum well active layer, Ga 1-y Al y As optical guiding layers interposing said quantum well active layer therebetween, and Ga 1-z Al z As cladding layers superposed on said optical guiding layers, respectively, the improvement wherein the AlAs mole fraction y at the area of each of said optical guiding layers positioned adjacent the interface of the optical guiding layers and the quantum well active layer meets the relationships y-x≧0.3 and z-y≦≦0.25.
Claim 3
Dependent Claim
37 words
A semiconductor laser device according to claim 1, wherein the whole area of each of said optical guiding layers is constituted by a GRIN region, the AlAs mole fraction of which varies according to the paraboric distribution.
Claim 4
Dependent Claim
30 words
A semiconductor laser device according to claim 1, wherein the AlAs mole fraction y of each of said optical guiding layers is constant in the direction of a layer thickness.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-26 | 1993-08-28 | 1994-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-26 | 1997-08-28 | 1998-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-26 | 2001-08-28 | 2002-02-27 | $7700.00 | Window Closed / Lapsed |