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EP0166593A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

A semiconductor laser device

Assignee: Sharp Corp
•
Filing: 1985-06-24
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Granted: —
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Expires: 2005-06-24
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Abstract

Abstract An optical semiconductor device comprising laminated thin layers made of two kinds of binary compounds to form a superlatticed optical waveguiding structure and a superlatticed active region structure, thereby achieving a quantum well effect.

Inventors

  • 👤 Toshiro Hayakawa
  • 👤 Takahiro Suyama
  • 👤 Saburo Yamamoto

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-27 20:58
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10H20/822; H10H20/824; H01S5/20; H01S5/2004; H01S5/32; H01S5/3211; H01S5/3216; H01S5/3432

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 34 words
An optical semiconductor device comprising laminated thin layers made of two kinds of binary compounds to form a superlatticed optical waveguiding structure and a superlatticed active region structure, thereby achieving a quantum well effect.
Claim 2
Dependent Claim 34 words
An optical semiconductor device comprising laminated thin layers made of two kinds of binary compounds to form a superlatticed optical waveguiding structure and a superlatticed active region structure, thereby achieving a quantum well effect.
Claim 3
Dependent Claim 30 words
An optical semiconductor device as claimed in Claim 1, wherein said two kinds of binary compounds are GaAs and AlAs, GaSb and AlSb, InAs and AlAs, or InP and GaP.
Claim 4
Dependent Claim 32 words
An optical semiconductor device as claimed in Claim 1 or 2, wherein said thin layers are successively grown to form a laminated structure by molecular beam epitaxy or metal-organic chemical vapor deposition.

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