US4787089A
Expired / Lapsed
US
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Quantum well semiconductor laser device
Assignee: Sharp Corp
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Filing: 1987-02-09
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Granted: 1988-11-22
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Expires: 2007-02-09
Abstract
Abstract A semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure which is composed of alternate layers consisting of thin GaAs layers and thin Al x Ga 1-x As (0<x<1) layers, each of said layers having a thickness of five molecular layers or less and each of said quantum well regions having a thickness in the range of 100 Å to 150 Å.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Kohsei Takahashi
- 👤 Takahiro Suyama
- 👤 Masafumi Kondo
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:43
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H01S5/3432
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
74 words
In a semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure, said superlatticed structure is composed of alternate layers consisting of thin GaAs layers and thin Al x Ga 1-x As (0<x<1) layers, each of said layers having a thickness of five molecular layers or less and each of said quantum well regions having a thickness in the range of 100 Å to 150 Å.
Claim 2
Dependent Claim
74 words
In a semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure, said superlatticed structure is composed of alternate layers consisting of thin GaAs layers and thin Al x Ga 1-x As (0<x<1) layers, each of said layers having a thickness of five molecular layers or less and each of said quantum well regions having a thickness in the range of 100 Å to 150 Å.
Claim 3
Dependent Claim
47 words
A semiconductor laser device according to claim 1, wherein the threshold current level is maintained to be at the minimum when the quantum well width is in the range of 100 Å to 150 Å where the photoluminescent full-width lobe of half of the maximum becomes minimum
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-22 | 1992-05-23 | 1992-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-22 | 1996-05-23 | 1996-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-22 | 2000-05-23 | 2000-11-22 | $7700.00 | Window Closed / Lapsed |