US4745612A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Separate confinement heterostructure semiconductor laser device
Assignee: Sharp Corp
•
Filing: 1986-07-11
•
Granted: 1988-05-17
•
Expires: 2006-07-11
Abstract
Abstract The laser device has an Al x Ga 1-x As (x≧0.3) quantum well active region having a thickness of 200 angstroms or less. Al y Ga 1-y As (y>x) carrier supplying layers sandwich the quantum well active region therebetween. An Al z Ga 1-z As (z>y) cladding layer is disposed on each of the carrier supplying layers. Finally an Al w Ga 1-w As (w>z) barrier layer is disposed between each of the carrier supplying layers and each of the cladding layers.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Kohsei Takahashi
- 👤 Masafumi Kondo
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:57
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; B; B82; B82Y; B82Y20/00; H01S5/3432
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
138 words
In a semiconductor laser device the combination comprising: a substrate; a first electrode formed under said substrate; a multilayer construction formed on said substrate; and a second electrode formed on said multilayer construction, said multilayer construction comprising at least the following in sequence: a first Al z Ga 1-z As (z>y) cladding layer; a first Al w Ga 1-w As (w>z) barrier layer; a first Al y Ga 1-y As (y>x) carrier supplying layer; an Al x Ga 1-x As (x≧0.3) quantum well active region having a thickness of 200 angstroms or less; a second carrier supplying layer having the same crystal composition as said first carrier supplying layer; a second barrier layer having the same crystal composition as said first barrier layer; and a second cladding layer having the same crystal composition as said first cladding layer.
Claim 2
Dependent Claim
138 words
In a semiconductor laser device the combination comprising: a substrate; a first electrode formed under said substrate; a multilayer construction formed on said substrate; and a second electrode formed on said multilayer construction, said multilayer construction comprising at least the following in sequence: a first Al z Ga 1-z As (z>y) cladding layer; a first Al w Ga 1-w As (w>z) barrier layer; a first Al y Ga 1-y As (y>x) carrier supplying layer; an Al x Ga 1-x As (x≧0.3) quantum well active region having a thickness of 200 angstroms or less; a second carrier supplying layer having the same crystal composition as said first carrier supplying layer; a second barrier layer having the same crystal composition as said first barrier layer; and a second cladding layer having the same crystal composition as said first cladding layer.
Claim 3
Dependent Claim
25 words
A semiconductor laser device according to claim 1, wherein said quantum well active region is an Al x Ga 1-x As single quantum well layer.
Claim 4
Dependent Claim
35 words
A semiconductor laser device according to claim 1, wherein said quantum well active region is a multilayered quantum well which is composed of alternate layers consisting of AlGaAs quantum wells and third AlGaAs barrier layers.
Claim 5
Dependent Claim
160 words
In a semiconductor laser device, the combination comprising: a substrate; a first electrode formed under said substrate; a multilayer construction formed on said substrate; and a second electrode formed on said multilayer construction, said multilayer construction comprising at least the following in sequence: a first Al z Ga 1-z As cladding layer; a first Al w Ga 1-w As (w>z) barrier layer; a first Al u Ga 1-u As (w≧u>x) carrier supplying layer, u varying from w to a value larger than x along the growth direction; an Al x Ga 1-x As (x≧0.3) quantum well active region having a thickness of 200 angstroms or less; a second Al v Ga 1-v As (w≧v>x) carrier supplying layer, v varying from a value larger than x to w along the growth direction; a second barrier layering having the same crystal composition as said first barrier layer; and a second cladding layer having the same crystal composition as said first cladding layer.
Claim 6
Dependent Claim
160 words
In a semiconductor laser device, the combination comprising: a substrate; a first electrode formed under said substrate; a multilayer construction formed on said substrate; and a second electrode formed on said multilayer construction, said multilayer construction comprising at least the following in sequence: a first Al z Ga 1-z As cladding layer; a first Al w Ga 1-w As (w>z) barrier layer; a first Al u Ga 1-u As (w≧u>x) carrier supplying layer, u varying from w to a value larger than x along the growth direction; an Al x Ga 1-x As (x≧0.3) quantum well active region having a thickness of 200 angstroms or less; a second Al v Ga 1-v As (w≧v>x) carrier supplying layer, v varying from a value larger than x to w along the growth direction; a second barrier layering having the same crystal composition as said first barrier layer; and a second cladding layer having the same crystal composition as said first cladding layer.
Claim 7
Dependent Claim
25 words
A semiconductor laser device according to claim 4, wherein said quantum well active region is an Al x Ga 1-x As single quantum well layer.
Claim 8
Dependent Claim
35 words
A semiconductor laser device according to claim 4, wherein said quantum well active region is a multilayered quantum well which is composed of alternate layers consisting of AlGaAs quantum wells and third AlGaAs barrier layers.
Claim 9
Dependent Claim
77 words
A semiconductor laser device according to claim 4, wherein said multilayer construction further comprises: a first Al s Ga 1-s As band connecting layer disposed between said first cladding layer and said first barrier layer, s varying from z to w along the growth direction; and a second Al t Ga 1-t As band connecting layer disposed between said second barrier layer and said second cladding layer, t varying from w to z along the growth direction.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-17 | 1991-11-16 | 1992-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-17 | 1995-11-16 | 1996-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-17 | 1999-11-16 | 2000-05-17 | $7700.00 | Window Closed / Lapsed |