US4671830A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of controlling the modeling of the well energy band profile by interdiffusion
Assignee: Xerox Corp
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Filing: 1986-06-09
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Granted: 1987-06-09
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Expires: 2006-06-09
Abstract
Abstract The method of controlling the modeling of the well energy band profile by interdiffusion comprises at least one thin disordering component layer contiguous with a surface of the quantum well layer and including a high content of a disordering component therein compared to the level of content thereof in semiconductor layers immediately adjacent thereto. The disordering components are Al and Ga in the GaAs/GaAlAs regime.
Inventors
- 👤 Robert D. Burnham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 12:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3824; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10D62/82; H10D62/824; H01S5/20; H01S5/2004; H01S5/2009; H01S5/3413; H01S5/343; H01S5/34313; H01S5/3432
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
112 words
The method of controlling the modeling of the quantum well energy band profile in a semiconductor structure having a plurality of semiconductor layers comprising the steps of providing at least one quantum well in said structure, providing a disordering layer in said structure contiguous with one surface of said quantum well and having therein a disordering component in an amount of at least 15% or more relative to at least those semiconductor layers in said structure contiguous with said disordering layer containing the same disordering element, and subjecting said structure to interdiffusion disordering along selected regions thereof to incrementally alter the energy band profile of said quantum well in said selected regions.
Claim 2
Independent Claim
112 words
The method of controlling the modeling of the quantum well energy band profile in a semiconductor structure having a plurality of semiconductor layers comprising the steps of providing at least one quantum well in said structure, providing a disordering layer in said structure contiguous with one surface of said quantum well and having therein a disordering component in an amount of at least 15% or more relative to at least those semiconductor layers in said structure contiguous with said disordering layer containing the same disordering element, and subjecting said structure to interdiffusion disordering along selected regions thereof to incrementally alter the energy band profile of said quantum well in said selected regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-08 | 1990-12-08 | 1991-06-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-08 | 1994-12-08 | 1995-06-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-08 | 1998-12-08 | 1999-06-09 | $7700.00 | Window Closed / Lapsed |