US4503540A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Phase-locked semiconductor laser device
Assignee: Hitachi Ltd
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Filing: 1982-04-14
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Granted: 1985-03-05
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Expires: 2002-04-14
Abstract
Abstract A phase-locked semiconductor laser device comprising a laminated structure in which a plurality of first semiconductor layers having the substantially same composition are stacked in a manner to be sandwiched between second semiconductor layers having a band gap wider, and a refractive index lower, than those of said first semiconductor layers; a third semiconductor layer which is disposed in contact with at least one of side faces of said laminated structure parallel to a traveling direction of a laser beam, which is not narrower in the band gap and not higher in the refractive index than said first semiconductor layers and which does not have the same conductivity type as, at least, that of said first semiconductor layers; means to inject current into an interface between said first semiconductor layers and said third semiconductor layer disposed on the side face of said laminated structure; and means to act as an optical resonator for the laser beam.
Inventors
- 👤 Hisao Nakashima
- 👤 Jun-Ichi Umeda
- 👤 Takao Kuroda
- 👤 Takashi Kajimura
- 👤 Hiroshi Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 12:49
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/2203; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4043; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H01S5/0424; H01S5/227; H01S5/2275
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
213 words
A semiconductor laser device comprising: a. a laminated structure with a top, bottom and two side faces which are parallel to each other and to the direction of a laser beam to be generated by said device having: i. a plurality of first semiconductor layers having substantially the same composition; ii. a plurality of second semiconductor layers having a wider band gap and a lower refractive index than said plurality of first semiconductor layers; iii. said first and second semiconductor layers stacked such that said first semiconductor layers are sandwiched between said second semiconductor layers; b. third semiconductor layers disposed adjacent said side faces, each third semiconductor layer in contact with a respective one of said side faces thereby forming interfaces with said first semiconductor layers, said third semiconductor layers having a band gap which is not narrower than the band gap of said first semiconductor layers and a refractive index which is not higher than the refractive index of said first semiconductor layers, the conductivity type of said third semiconductor layers not being the same as that of said first semiconductor layers; c. means to inject current into said interfaces between said first semiconductor layers and said third semiconductor layers; and d. means acting as an optical resonator for said laser beam.
Claim 2
Dependent Claim
213 words
A semiconductor laser device comprising: a. a laminated structure with a top, bottom and two side faces which are parallel to each other and to the direction of a laser beam to be generated by said device having: i. a plurality of first semiconductor layers having substantially the same composition; ii. a plurality of second semiconductor layers having a wider band gap and a lower refractive index than said plurality of first semiconductor layers; iii. said first and second semiconductor layers stacked such that said first semiconductor layers are sandwiched between said second semiconductor layers; b. third semiconductor layers disposed adjacent said side faces, each third semiconductor layer in contact with a respective one of said side faces thereby forming interfaces with said first semiconductor layers, said third semiconductor layers having a band gap which is not narrower than the band gap of said first semiconductor layers and a refractive index which is not higher than the refractive index of said first semiconductor layers, the conductivity type of said third semiconductor layers not being the same as that of said first semiconductor layers; c. means to inject current into said interfaces between said first semiconductor layers and said third semiconductor layers; and d. means acting as an optical resonator for said laser beam.
Claim 3
Dependent Claim
49 words
A semiconductor laser device as claimed in claim 1 and further including further laminated structures at each end of said laminated structure, having a conductivity type opposite to that of said laminated structure, said further laminated structures thereby disposed between said laminated structure and facets of said laser device.
Claim 4
Dependent Claim
24 words
A semiconductor laser device as defined claim 1 and further including a semi-insulating semiconductor substrate supporting said laminated structure and said third semiconductor layers.
Claim 5
Dependent Claim
33 words
A semiconductor laser device as defined in claim 1 and further including: a semiconductor substrate and a semi-insulating semiconductor layer formed thereon, at least said laminated structure disposed on said semi-insulating semiconductor layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-04 | 1988-09-03 | 1989-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-04 | 1992-09-03 | 1993-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-04 | 1996-09-03 | 1997-03-05 | $7700.00 | Window Closed / Lapsed |