Transverse junction array laser

Claim 2

A solid state light emitting device comprising: a semiconductor body including a plurality of active region layers; each of said active region layers being sandwiched between semiconductor material having a bandgap higher than the bandgap of the material of that active region layer; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers; resonator means for providing a plurality of optical resonant cavities each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam.

Claim 3

A solid state light emitting device comprising: a semiconductor body including a plurality of substantially planar active region layers; each of said active region layers being sandwiched between semiconductor material having a bandgap higher than the bandgap of the material of that active region layer; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers in a direction transverse to the planar direction of said active region layers; resonator means for providing a plurality of optical resonant cavities each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam having a propogation direction parallel to the planar direction of that active region layer.

Claim 4

A solid state light emitting device comprising: a semiconductor body including a plurality of substantially planar active region layers; each of said active region layers being sandwiched between semiconductor material having a bandgap higher than the bandgap of the material of that active region layer; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers in a direction transverse to the planar direction of said active region layers; resonator means for providing a plurality of optical resonant cavities each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam having a propogation direction parallel to the planar direction of that active region layer.

Claim 5

A solid state light emitting device comprising: a semiconductor body including a plurality of substantially planar active region layers; each of said active region layers being sandwiched between semiconductor material having a bandgap higher than the bandgap of the material of that active region layer, adjacent pairs of said active region layers being separated by a distance substantially greater than the thickness of any of said active region layers; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers in a direction transverse to the planar direction of said active region layers; resonator means for providing a plurality of optical resonant cavities each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam having a propogation direction parallel to the planar direction of that active region layer.

Claim 6

A solid state light emitting device comprising: a semiconductor body including a plurality of substantially planar active region layers; each of said active region layers being sandwiched between semiconductor material having a bandgap higher than the bandgap of the material of that active region layer, adjacent pairs of said active region layers being separated by a distance substantially greater than the thickness of any of said active region layers; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers in a direction transverse to the planar direction of said active region layers; resonator means for providing a plurality of optical resonant cavities each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam having a propogation direction parallel to the planar direction of that active region layer.

Claim 7

A solid state light emitting device comprising: a semiconductor body including a plurality of substantially planar active region layers; each of said active region layers being sandwiched between semiconductor material having a bandgap higher than the bandgap of the material of that active region layer; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers in a direction transverse to the planar direction of said active region layers; resonator means for providing a plurality of optical resonant cavities each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam having a propogation direction parallel to the planar direction of that active region layer; said active region layers being in sufficiently close proximity to each other that the light beams emitted from adjacent active region layers are phase locked.

Claim 8

A solid state light emitting device comprising: a semiconductor body including a plurality of substantially planar active region layers; each of said active region layers being sandwiched between semiconductor material having a bandgap higher than the bandgap of the material of that active region layer; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers in a direction transverse to the planar direction of said active region layers; resonator means for providing a plurality of optical resonant cavities each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam having a propogation direction parallel to the planar direction of that active region layer; said active region layers being in sufficiently close proximity to each other that the light beams emitted from adjacent active region layers are phase locked.

Claim 9

A solid state light emitting device comprising: a semiconductor body including a substrate, a plurality of substantially planar active region layers of a first material, and a plurality of other layers of a second material having a bandgap higher than the bandgap of said first material; adjacent pairs of said active region layers being separated by one of said plurality of other layers; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers in a direction transverse to the planar direction of said active region layers; resonator means for providing a plurality of optical resonant cavities each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam having a propogation direction parallel to the planar direction of that active region layer; said active region layers being in sufficiently close proximity to each other that the emitted light beams are phase locked.

Claim 10

A solid state light emitting device comprising: a semiconductor body including a substrate, a plurality of substantially planar active region layers of a first material, and a plurality of other layers of a second material having a bandgap higher than the bandgap of said first material; adjacent pairs of said active region layers being separated by one of said plurality of other layers; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers in a direction transverse to the planar direction of said active region layers; resonator means for providing a plurality of optical resonant cavities each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam having a propogation direction parallel to the planar direction of that active region layer; said active region layers being in sufficiently close proximity to each other that the emitted light beams are phase locked.

Claim 11

A solid state device for producing a composite output beam of low divergence comprising: a semiconductor body including a substrate, a plurality of substantially planar laser active region layers, and a plurality of other substantially planar semiconductor layers each of which is of a material having a bandgap higher than that of the material of any of said active region layers; at least some of said active region layers being sandwiched between different pairs of said other semiconductor layers; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers in a direction transverse to the planar direction of said active region layers; resonator means for providing a plurality of optical resonant cavity each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam having a propogation direction parallel to the planar direction of that active region layer; said active region layers being in sufficiently close proximity to each other that the light beams emitted from adjacent active region layers are phase-locked to thereby provide a composite output light beam having a low divergence.

Claim 12

A solid state device for producing a composite output beam of low divergence comprising: a semiconductor body including a substrate, a plurality of substantially planar laser active region layers, and a plurality of other substantially planar semiconductor layers each of which is of a material having a bandgap higher than that of the material of any of said active region layers; at least some of said active region layers being sandwiched between different pairs of said other semiconductor layers; a rectifying junction within said semiconductor body, at least a portion of said rectifying junction traversing said active region layers in a direction transverse to the planar direction of said active region layers; resonator means for providing a plurality of optical resonant cavity each of which includes one of said active region layers; and electrode means for the application of forward bias to said rectifying junction to provide pump current to said active region layers whereby, upon sufficient forward bias, each of said active region layers emits a light beam having a propogation direction parallel to the planar direction of that active region layer; said active region layers being in sufficiently close proximity to each other that the light beams emitted from adjacent active region layers are phase-locked to thereby provide a composite output light beam having a low divergence.

Claim 13

The light emitting device of claim 6 in which heat conducting means are in close proximity to at least a portion of said portion of said rectifying junction.