US5082798A
Expired / Lapsed
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Crystal growth method
Assignee: Mitsubishi Electric Corp
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Filing: 1990-09-27
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Granted: 1992-01-21
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Expires: 2010-09-27
Abstract
Abstract A crystal growth method using an atomic layer epitaxial growth method for growing a III-V compound semiconductor by metal organic chemical deposition in which group III and group V elements are supplied independently including doping with a group IV element as an amphoteric impurity by alternatingly epitaxially growing one atomic layer including the group IV element and one of the group III and group V elements and epitaxially growing one atomic layer of the other of the group III and V elements.
Inventors
- 👤 Satoshi Arimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:04
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
85 words
A method of growing a p-type III-V compound semiconductor in a metal organic chemical deposition process in which a gaseous compound including the group III element of the compound semiconductor and a gaseous compound including the group V element of the compound semiconductor are supplied independently comprising alternatingly epitaxially growing at a temperature of 300° C. to 600° C. one atomic layer including a group IV amphoteric dopant element and a group V element and epitaxially growing one atomic layer of said group III element.
Claim 2
Independent Claim
85 words
A method of growing a p-type III-V compound semiconductor in a metal organic chemical deposition process in which a gaseous compound including the group III element of the compound semiconductor and a gaseous compound including the group V element of the compound semiconductor are supplied independently comprising alternatingly epitaxially growing at a temperature of 300° C. to 600° C. one atomic layer including a group IV amphoteric dopant element and a group V element and epitaxially growing one atomic layer of said group III element.
Claim 3
Dependent Claim
16 words
A crystal growth method as defined in claim 1 wherein said III-V compound semiconductor is GaAs.
Claim 4
Dependent Claim
16 words
A crystal growth method as defined in claim 1 wherein said III-V compound semiconductor is InP.
Claim 5
Dependent Claim
16 words
A crystal growth method as defined in claim 1 wherein said III-V compound semiconductor is AlAs.
Claim 6
Dependent Claim
16 words
A crystal growth method as defined in claim 1 wherein said III-V compound semiconductor is AlGaAs.
Claim 7
Dependent Claim
16 words
A crystal growth method as defined in claim 1 wherein said III-V compound semiconductor is AlGaInAs.
Claim 8
Independent Claim
85 words
A method of epitaxially growing an p-type III-V compound semiconductor containing a group IV dopant element comprising, at a temperature of 300° C. to 600° C., sequentially and repeatedly decomposing a mixture of gaseous compounds including a gaseous compound containing a group V element and a gaseous compound containing a group IV element to deposit a mixed monatomic layer of group V and group IV atoms and decomposing a gaseous compound containing a group III element to deposit a monatomic layer of group III atoms.
Claim 9
Independent Claim
85 words
A method of epitaxially growing an p-type III-V compound semiconductor containing a group IV dopant element comprising, at a temperature of 300° C. to 600° C., sequentially and repeatedly decomposing a mixture of gaseous compounds including a gaseous compound containing a group V element and a gaseous compound containing a group IV element to deposit a mixed monatomic layer of group V and group IV atoms and decomposing a gaseous compound containing a group III element to deposit a monatomic layer of group III atoms.
Claim 10
Dependent Claim
22 words
The method of claim 7 wherein the gaseous group III, group IV, and group V compounds are trimethylgallium, silane, and arsine, respectively.
Claim 11
Dependent Claim
19 words
The method of claim 7 including flowing hydrogen over each deposited monatomic layer before depositing the next monatomic layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-20 | 1995-07-22 | 1996-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-20 | 1999-07-22 | 2000-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-20 | 2003-07-22 | 2004-01-21 | $7700.00 | Window Closed / Lapsed |