US4845049A
Expired / Lapsed
US
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Doping III-V compound semiconductor devices with group VI monolayers using ALE
Assignee: NEC Corp
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Filing: 1988-03-28
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Granted: 1989-07-04
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Expires: 2008-03-28
Abstract
Abstract An n-type III-V compound semiconductor comprises a plurality of monolayers of III-V compound semiconductor molecules having a layer-by-layer structure of group III element and group V element laminated alternately, and a group VI element-doped monolayer. The group VI element-doped monolayer is inserted into the III-V compound semiconductor molecules by occupying lattice points which were occupied by the group V element. The layers of the semiconductor are grown by Atomic Layer Epitaxy process.
Inventors
- 👤 Haruo Sunakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3246; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3448; Y; Y10; Y10S; Y10S148/00; Y10S148/04; Y10S148/065; Y10S148/11
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
89 words
Method of producing n-type III-V compound semiconductor comprising: a first step of growing a plurality of monolayers of III-V compound semiconductor molecules on a III-V compound substrate; a second step of growing a single layer of group VI element on said III-V monolayers so as to occupy lattice points for group V element by means of Atomic Layer Epitaxy process; and a third step of growing a plurality of monolayers of III-V compound semiconductor molecules on the group VI element-doped layer by means of said Atomic Layer Epitaxy process.
Claim 2
Dependent Claim
89 words
Method of producing n-type III-V compound semiconductor comprising: a first step of growing a plurality of monolayers of III-V compound semiconductor molecules on a III-V compound substrate; a second step of growing a single layer of group VI element on said III-V monolayers so as to occupy lattice points for group V element by means of Atomic Layer Epitaxy process; and a third step of growing a plurality of monolayers of III-V compound semiconductor molecules on the group VI element-doped layer by means of said Atomic Layer Epitaxy process.
Claim 3
Dependent Claim
35 words
Method according to claim 1, wherein said III-V compound semiconductor is selected from the group comprising GaAs, InP, CaP and InAs, while said group VI element is selected from the group comprising Se and S.
Claim 4
Dependent Claim
217 words
Growing method of Se-doped n-type GaAs crystal comprising; a first step of adsorbing a monolayer of GaCl molecule onto GaAs substrate by exposing thereof the GaCl gas, a second step of exposing said substrate to AsH 3 gas to grow As monolayer onto Ga monolayer by desorbing Cl from said GaCl molecule as HCl gas, a third step of repeating said first step and second step consequently to grow a desired number of monolayers of GaAs molecule, a fourth step of adsorbing a monolayer of GaCl molecule onto said monolayers of GaAs molecule, a fifth step of exposing said substrate after said fourth step to H 2 Se gas to grow Se monolayer onto Ga monolayer by desorbing Cl from said GaCl molecule as HCl gas, a sixth step of growing GaCl monolayer onto said Se monolayer exposing said substrate after said fifth step to GaCl gas; a seventh step of exposing said substrate after said sixth step to AsH 3 gas to grow As monolayer onto Ga monolayer, a eighth step of exposing said substrate after said seventh step to GaCl gas to grow Ga monolayer onto As monolayer, and a ninth step of repeating said seventh step and eighth step alternatively after said eighth step to grow a desired number of monolayers of GaAs molecules.
Claim 5
Dependent Claim
217 words
Growing method of Se-doped n-type GaAs crystal comprising; a first step of adsorbing a monolayer of GaCl molecule onto GaAs substrate by exposing thereof the GaCl gas, a second step of exposing said substrate to AsH 3 gas to grow As monolayer onto Ga monolayer by desorbing Cl from said GaCl molecule as HCl gas, a third step of repeating said first step and second step consequently to grow a desired number of monolayers of GaAs molecule, a fourth step of adsorbing a monolayer of GaCl molecule onto said monolayers of GaAs molecule, a fifth step of exposing said substrate after said fourth step to H 2 Se gas to grow Se monolayer onto Ga monolayer by desorbing Cl from said GaCl molecule as HCl gas, a sixth step of growing GaCl monolayer onto said Se monolayer exposing said substrate after said fifth step to GaCl gas; a seventh step of exposing said substrate after said sixth step to AsH 3 gas to grow As monolayer onto Ga monolayer, a eighth step of exposing said substrate after said seventh step to GaCl gas to grow Ga monolayer onto As monolayer, and a ninth step of repeating said seventh step and eighth step alternatively after said eighth step to grow a desired number of monolayers of GaAs molecules.
References Cited (Backward Citations)
US4058430A
Cited
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