US4592791A
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Liquid phase epitaxial growth method for producing a III-V group compound semiconductor
Assignee: Fujitsu Ltd
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Filing: 1983-11-21
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Granted: 1986-06-03
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Expires: 2003-11-21
Abstract
Abstract A liquid phase epitaxial growth method is disclosed wherein (111)A InP substrate is used for growing an epitaxial layer of AlxIn1-xAs or AlxGayIn1-x-yAs compound semiconductor by liquid phase epitaxy.
Inventors
- 👤 Kazuo Nakajima
- 👤 Toshiyuki Tanahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 04:59
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B19/00; C30B19/02; C30B19/04; C30B19/12
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
43 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, and (b) growing an epitaxial layer of an aluminum-indium-arsenide (Al x In 1-x As) by liquid phase epitaxy on said substrate, wherein x=0.48.
Claim 2
Dependent Claim
43 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, and (b) growing an epitaxial layer of an aluminum-indium-arsenide (Al x In 1-x As) by liquid phase epitaxy on said substrate, wherein x=0.48.
Claim 3
Dependent Claim
46 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, and (b) growing an epitaxial layer of an aluminum-gallium-indium-arsenide (Al x Ga y In 1-x-y As) by liquid phase epitaxy on said substrate, wherein 0<x<0.48, 0<y<0.47.
Claim 4
Dependent Claim
46 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, and (b) growing an epitaxial layer of an aluminum-gallium-indium-arsenide (Al x Ga y In 1-x-y As) by liquid phase epitaxy on said substrate, wherein 0<x<0.48, 0<y<0.47.
Claim 5
Dependent Claim
70 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, (b) growing a first epitaxial layer of aluminum-gallium-indium-arsenide (Al x Ga y In 1-x-y As) by liquid phase epitaxy on said substrate, wherein 0<x<0.48, 0<y<0.47, and (c) growing a second epitaxial layer of aluminum-indium-arsenide (Al x In 1-x As) by liquid phase epitaxy on said first epitaxial layer, wherein x=0.48.
Claim 6
Dependent Claim
70 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, (b) growing a first epitaxial layer of aluminum-gallium-indium-arsenide (Al x Ga y In 1-x-y As) by liquid phase epitaxy on said substrate, wherein 0<x<0.48, 0<y<0.47, and (c) growing a second epitaxial layer of aluminum-indium-arsenide (Al x In 1-x As) by liquid phase epitaxy on said first epitaxial layer, wherein x=0.48.
Claim 7
Dependent Claim
70 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, (b) growing a first epitaxial layer comprising aluminum-indium-arsenide (Al x In 1-x As) by liquid phase epitaxy on said substrate, wherein x=0.48, and (c) growing a second epitaxial layer comprising aluminum-gallium-indium-arsenide (Al x Ga y In 1-x-y As) by liquid phase epitaxy on said first epitaxial layer, wherein 0<x<0.48, 0<y<0.47.
Claim 8
Dependent Claim
70 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, (b) growing a first epitaxial layer comprising aluminum-indium-arsenide (Al x In 1-x As) by liquid phase epitaxy on said substrate, wherein x=0.48, and (c) growing a second epitaxial layer comprising aluminum-gallium-indium-arsenide (Al x Ga y In 1-x-y As) by liquid phase epitaxy on said first epitaxial layer, wherein 0<x<0.48, 0<y<0.47.
Claim 9
Dependent Claim
61 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, (b) growing a first epitaxial layer having crystal plane (111)A by liquid phase epitaxy on said substrate, and (c) growing a second epitaxial layer of aluminum-indium-arsenide (Al x In 1-x As) by liquid epitaxy on said first epitaxial layer, wherein x=0.48.
Claim 10
Dependent Claim
61 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, (b) growing a first epitaxial layer having crystal plane (111)A by liquid phase epitaxy on said substrate, and (c) growing a second epitaxial layer of aluminum-indium-arsenide (Al x In 1-x As) by liquid epitaxy on said first epitaxial layer, wherein x=0.48.
Claim 11
Dependent Claim
61 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, (b) growing a first epitaxial layer having crystal plane (111)A by liquid phase epitaxy on said substrate, and (c) growing a second epitaxial layer of aluminum-gallium-indium-arsenide (Al x Ga y In 1-x-y As) on said first epitaxial layer, wherein 0<x<0.48, 0<y<0.47.
Claim 12
Dependent Claim
61 words
A liquid phase epitaxial growth method comprising the steps of: (a) preparing an indium phosphide substrate with crystal plane (111)A, (b) growing a first epitaxial layer having crystal plane (111)A by liquid phase epitaxy on said substrate, and (c) growing a second epitaxial layer of aluminum-gallium-indium-arsenide (Al x Ga y In 1-x-y As) on said first epitaxial layer, wherein 0<x<0.48, 0<y<0.47.
References Cited (Backward Citations)
US4096511A
Cited
US3933538A
Cited
US4122407A
Cited
US4326176A
Cited
US4321556A
Cited
US4372791A
Cited
US4246050A
Cited
US4342148A
Cited
US4354898A
Cited
US4468258A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-02 | 1989-12-02 | 1990-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-02 | 1993-12-02 | 1994-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-02 | 1997-12-02 | 1998-06-03 | $7700.00 | Window Closed / Lapsed |