US4096511A
Expired / Lapsed
US
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Photocathodes
Assignee: Individual
•
Filing: 1972-11-28
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Granted: 1978-06-20
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Expires: 1992-11-28
Abstract
Abstract A transmission photodetector operable at wavelengths greater than 0.86 micrometers comprising a substrate transparent to the radiation to be detected, at least one epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As and an epitaxial p-type Ga 1-y In y As detector layer. The said one intermediate layer may be p-type. If desired a second epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-z In z As may be provided between the substrate and the said one intermediate layer. In the foregoing 0<x≦1, 0<y<1, and ≦0 z< y.
Inventors
- 👤 Philip Gurnell
- 👤 Michael Charles Rowland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:27
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/02; H01J9/12; H01J1/00; H01J1/02; H01J1/34; H01J2201/00; H01J2201/34; H01J2201/342; H01J2201/3421; H01J2201/3423
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
46 words
A transmission photocathode comprising: a crystalline substrate transparent to the radiation to be detected, at least one epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As, and an epitaxial detector layer comprising p-type Ga 1-y In y As wherein 0<x≦1 and 0<y<1.
Claim 2
Dependent Claim
46 words
A transmission photocathode comprising: a crystalline substrate transparent to the radiation to be detected, at least one epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As, and an epitaxial detector layer comprising p-type Ga 1-y In y As wherein 0<x≦1 and 0<y<1.
Claim 3
Dependent Claim
49 words
A transmission photocathode comprising: gallium phosphide as a crystalline substrate transparent to the radiation to be detected, at least one epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As, and an epitaxial detector layer comprising p-type Ga 1-y In y As wherein 0<x≦1 and 0<y<1.
Claim 4
Dependent Claim
49 words
A transmission photocathode comprising: gallium phosphide as a crystalline substrate transparent to the radiation to be detected, at least one epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As, and an epitaxial detector layer comprising p-type Ga 1-y In y As wherein 0<x≦1 and 0<y<1.
Claim 5
Dependent Claim
28 words
A transmission photocathode, according to claim 1, including a potential barrier of up to 1/2 volt at the interface of said detector layer and said one intermediate layer.
Claim 6
Dependent Claim
47 words
A transmission photocathode comprising: a crystalline substrate transparent to the radiation to be detected, at least one p-type epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As, and an epitaxial detector layer comprising p-type Ga 1-y In y As wherein 0<x≦1 and 0<y<1.
Claim 7
Dependent Claim
47 words
A transmission photocathode comprising: a crystalline substrate transparent to the radiation to be detected, at least one p-type epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As, and an epitaxial detector layer comprising p-type Ga 1-y In y As wherein 0<x≦1 and 0<y<1.
Claim 8
Dependent Claim
81 words
A transmission photocathode comprising: a crystalline substrate transparent to the radiation to be detected, at least one p-type epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As, wherein said p-type dopant is selected from the group consisting of zinc, cadmium, germanium, and silicon, and an epitaxial detector layer comprising p-type Ga 1-y In y As wherein 0< x≦1 and 0<y<1 and wherein said p-type dopant is selected from the group consisting of zinc, cadmium, germanium, and silicon.
Claim 9
Dependent Claim
81 words
A transmission photocathode comprising: a crystalline substrate transparent to the radiation to be detected, at least one p-type epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As, wherein said p-type dopant is selected from the group consisting of zinc, cadmium, germanium, and silicon, and an epitaxial detector layer comprising p-type Ga 1-y In y As wherein 0< x≦1 and 0<y<1 and wherein said p-type dopant is selected from the group consisting of zinc, cadmium, germanium, and silicon.
Claim 10
Dependent Claim
83 words
A transmission photocathode comprising: gallium phosphide as a crystalline substrate transparent to the radiation to be detected, at least one epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As and a second epitaxial intermediate layer interposed between said substrate and said one intermediate layer, wherein said second intermediate layer comprises (Ga 1-x Al x ) 1-z In z As and wherein 0≦z<y, and an epitaxial detector layer comprising p-type Ga 1-y In y As wherein 0<x≦1 and 0<y< 1.
Claim 11
Dependent Claim
83 words
A transmission photocathode comprising: gallium phosphide as a crystalline substrate transparent to the radiation to be detected, at least one epitaxial intermediate layer comprising (Ga 1-x Al x ) 1-y In y As and a second epitaxial intermediate layer interposed between said substrate and said one intermediate layer, wherein said second intermediate layer comprises (Ga 1-x Al x ) 1-z In z As and wherein 0≦z<y, and an epitaxial detector layer comprising p-type Ga 1-y In y As wherein 0<x≦1 and 0<y< 1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-06-19 | 1981-12-19 | 1982-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-06-19 | 1985-12-19 | 1986-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-06-19 | 1989-12-19 | 1990-06-20 | $7700.00 | Window Closed / Lapsed |