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US5250148A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for growing GaAs monocrystal film

Assignee: Japan Science and Technology Agency
•
Filing: 1991-11-12
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Granted: 1993-10-05
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Expires: 2011-11-12
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Abstract

Abstract A GaAs monocrystal film was grown by use of a process which comprises introducing a gaseous compound containing a component element desired to be grown into a vacuum tank, and submitting the compound to reaction on a base to thereby grow a semiconductor crystal each one molecular layer. Triethylgallium (TEG) and arsine (AsH 3 ) are used as the gaseous compound. One gas is introduced into the vaccum tank and then discharged after the passage of a predetermined time, and the other gas is introduced thereinto and then discharged after the passage of a predetermined time whereby a crystal for one molecular layer grows. By use of TEG as a gallium source, reaction progresses even when a temperature of the base is below 300° C., and a GaAs monocrystal film which is extremely less in lattice failure and impurities was obtained.

Inventors

  • 👤 Junichi Nishizawa
  • 👤 Hitoshi Abe

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 17:55
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; C30B29/42; C30B29/60; C30B29/68

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 140 words
A method for growing a GaAs single crystal film on a base plate by introducing gases containing a crystal component element into a growing vessel evacuated to a vacuum from the outside, the method comprising evacuating said growing vessel to a predetermined pressure of 10 -7 to 10 -8 Pascals while introducing triethyl gallium (TEG) into said growing vessel for a 0.5 to 10 seconds under a pressure of 10 -1 to 10 -7 Pa, evacuating said vessel, introducing arsine (AsH 3 ) into said growing vessel for 2 to 200 seconds under a pressure of 10 -1 to 10 -7 Pa to thereby repeat a cycle for growing at least substantially one molecular layer, and thereby growing a GaAs single crystal film of a desired thickness, without the presence of carbon, with the accuracy of a single molecular layer.
Claim 2
Independent Claim 140 words
A method for growing a GaAs single crystal film on a base plate by introducing gases containing a crystal component element into a growing vessel evacuated to a vacuum from the outside, the method comprising evacuating said growing vessel to a predetermined pressure of 10 -7 to 10 -8 Pascals while introducing triethyl gallium (TEG) into said growing vessel for a 0.5 to 10 seconds under a pressure of 10 -1 to 10 -7 Pa, evacuating said vessel, introducing arsine (AsH 3 ) into said growing vessel for 2 to 200 seconds under a pressure of 10 -1 to 10 -7 Pa to thereby repeat a cycle for growing at least substantially one molecular layer, and thereby growing a GaAs single crystal film of a desired thickness, without the presence of carbon, with the accuracy of a single molecular layer.
Claim 3
Dependent Claim 22 words
The process as set forth in claim 1, wherein a heating source comprises an infrared lamp provided externally of the growing tank.
Claim 4
Dependent Claim 19 words
The process as set forth in claim 1, wherein the GaAs layer obtained has a (111) B crystal surface.
Claim 5
Dependent Claim 19 words
A process according to claim 1, wherein each of said monocrystalline GaAs film layers is less than 3.2 Å.
Claim 6
Dependent Claim 22 words
A process according to claim 1, wherein said GaAs film has an impurity density, undoped, of 10 17 cm -3 or less.

References Cited (Backward Citations)

US3293074A Cited
US3802967A Cited
JPS49882A Cited
US4058430A Cited
US4086109A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-10-04 1997-04-05 1997-10-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-10-04 2001-04-05 2001-10-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-10-04 2005-04-05 2005-10-05 $7700.00 Window Closed / Lapsed

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